Richard Wendell Foote, JR.

Person

Burleson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
System and method for creating different field oxide profiles in a...
- Patent number 7,863,153
- Issue date Jan 4, 2011
- National Semiconductor Corporation
- Richard W. Foote, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a buried thin film resistor having...
- Patent number 7,808,048
- Issue date Oct 5, 2010
- National Semiconductor Corporation
- Rodney Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film resistor and method of forming the resistor on spaced-apa...
- Patent number 7,633,373
- Issue date Dec 15, 2009
- National Semiconductor Corporation
- Peter Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for controlling the formation of an interfacial o...
- Patent number 7,470,594
- Issue date Dec 30, 2008
- National Semiconductor Corporation
- Richard W. Foote, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for faceting via top corners to improve metal fill
- Patent number 7,456,097
- Issue date Nov 25, 2008
- National Semiconductor Corporation
- Rodney Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for using an oxidation process to create a steppe...
- Patent number 7,390,722
- Issue date Jun 24, 2008
- National Semiconductor Corporation
- Richard Wendell Foote, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for providing a buried thin film resistor having...
- Patent number 7,332,403
- Issue date Feb 19, 2008
- National Semiconductor Corporation
- Rodney Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for using plasma to adjust the resistance of thin...
- Patent number 7,230,517
- Issue date Jun 12, 2007
- National Semiconductor Corporation
- Richard Wendell Foote, Jr.
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DMOS Transistor with a Cavity that Lies Below the Drift Region
- Publication number 20120273881
- Publication date Nov 1, 2012
- William French
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS Transistor with a Slanted Super Junction Drift Structure
- Publication number 20120261753
- Publication date Oct 18, 2012
- Peter J. Hopper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC CONTACT SCHEMES FOR GROUP III-V DEVICES HAVING A TWO-DIMENSIO...
- Publication number 20120223317
- Publication date Sep 6, 2012
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench DMOS Transistor with Reduced Gate-to-Drain Capacitance
- Publication number 20120211826
- Publication date Aug 23, 2012
- Yaojian Leng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR INCREASING BREAKDOWN VOLTAGE OF LOCOS ISOLATE...
- Publication number 20110065256
- Publication date Mar 17, 2011
- National Semiconductor Corporation
- Richard W. Foote, JR.
- H01 - BASIC ELECTRIC ELEMENTS

Richard Wendell Foote, JR.

Person

Patents Grantslast 30 patents

System and method for creating different field oxide profiles in a...

System and method for providing a buried thin film resistor having...

Thin film resistor and method of forming the resistor on spaced-apa...

System and method for controlling the formation of an interfacial o...

System and method for faceting via top corners to improve metal fill

System and method for using an oxidation process to create a steppe...

System and method for providing a buried thin film resistor having...

System and method for using plasma to adjust the resistance of thin...

Patents Applicationslast 30 patents

DMOS Transistor with a Cavity that Lies Below the Drift Region

DMOS Transistor with a Slanted Super Junction Drift Structure

OHMIC CONTACT SCHEMES FOR GROUP III-V DEVICES HAVING A TWO-DIMENSIO...

Trench DMOS Transistor with Reduced Gate-to-Drain Capacitance

SYSTEM AND METHOD FOR INCREASING BREAKDOWN VOLTAGE OF LOCOS ISOLATE...