Robb A. Johnson

Person

Thousand Oaks, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 7,713,829
- Issue date May 11, 2010
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 7,173,274
- Issue date Feb 6, 2007
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused extrinsic base and method for fabrication
- Patent number 6,900,519
- Issue date May 31, 2005
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused extrinsic base and method for fabrication
- Patent number 6,869,854
- Issue date Mar 22, 2005
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 6,815,802
- Issue date Nov 9, 2004
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial base bipolar transistor with raised extrinsic base
- Patent number 6,812,545
- Issue date Nov 2, 2004
- International Business Machines Corporation
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for formation of a blocked silicide resistor
- Patent number 6,660,664
- Issue date Dec 9, 2003
- International Business Machines Corp.
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an epitaxial base bipolar transistor with ra...
- Patent number 6,617,220
- Issue date Sep 9, 2003
- International Business Machines Corporation
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench-buried layer array and integrated device structures for...
- Patent number 6,600,199
- Issue date Jul 29, 2003
- International Business Machines Corporation
- Steven H. Voldman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 6,426,265
- Issue date Jul 30, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...
- Publication number 20080124881
- Publication date May 29, 2008
- International Business Machines Corporation
- Jack Ooh Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for formation of a bipolar resistor
- Publication number 20050095787
- Publication date May 5, 2005
- International Business Machines Corporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Publication number 20050054171
- Publication date Mar 10, 2005
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffused extrinsic base and method for fabrication
- Publication number 20040222495
- Publication date Nov 11, 2004
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffused extrinsic base and method for fabrication
- Publication number 20040014271
- Publication date Jan 22, 2004
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial base bipolar transistor with raised extrinsic base
- Publication number 20030201517
- Publication date Oct 30, 2003
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-self-aligned SiGe heterojunction bipolar transistor
- Publication number 20020197807
- Publication date Dec 26, 2002
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Publication number 20020121676
- Publication date Sep 5, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...
- Publication number 20020100917
- Publication date Aug 1, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep trench-buried layer array and integrated device structures for...
- Publication number 20020084506
- Publication date Jul 4, 2002
- International Business Machines Corporation
- Steven H. Voldman
- H01 - BASIC ELECTRIC ELEMENTS

Robb A. Johnson

Person

Patents Grantslast 30 patents

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Diffused extrinsic base and method for fabrication

Diffused extrinsic base and method for fabrication

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Epitaxial base bipolar transistor with raised extrinsic base

Structure and method for formation of a blocked silicide resistor

Method for fabricating an epitaxial base bipolar transistor with ra...

Deep trench-buried layer array and integrated device structures for...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Patents Applicationslast 30 patents

INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...

Structure and method for formation of a bipolar resistor

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Diffused extrinsic base and method for fabrication

Diffused extrinsic base and method for fabrication

Epitaxial base bipolar transistor with raised extrinsic base

Non-self-aligned SiGe heterojunction bipolar transistor

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...

Deep trench-buried layer array and integrated device structures for...