Robert Binder

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with ferroelectric hafnium oxide and method fo...
- Patent number 9,269,785
- Issue date Feb 23, 2016
- GLOBALFOUNDRIES Inc.
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits with fluorine passivation
- Patent number 8,791,003
- Issue date Jul 29, 2014
- GLOBALFOUNDRIES, INC.
- Dina Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate stack formation for replacement gate technology
- Patent number 8,664,103
- Issue date Mar 4, 2014
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in a high-K gate electrode structure after...
- Patent number 8,653,605
- Issue date Feb 18, 2014
- GLOBALFOUNDRIES Inc.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits with narrow, metal fill...
- Patent number 8,652,890
- Issue date Feb 18, 2014
- GLOBALFOUNDRIES, INC.
- Sven Schmidbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform high-k metal gate stacks by adjusting threshold voltage for...
- Patent number 8,445,344
- Issue date May 21, 2013
- GLOBALFOUNDRIES Inc.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in high-K metal gate electrode structures...
- Patent number 8,440,559
- Issue date May 14, 2013
- GLOBALFOUNDRIES Inc.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device formed by a replacement gate approach based on...
- Patent number 8,383,500
- Issue date Feb 26, 2013
- GLOBALFOUNDRIES Inc.
- Gerd Marxsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in a high-k gate electrode structure after...
- Patent number 8,343,837
- Issue date Jan 1, 2013
- GLOBALFOUNDRIES, INC.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing integrity of a high-k gate stack by confining a metal cap...
- Patent number 8,324,091
- Issue date Dec 4, 2012
- GLOBALFOUNDRIES Inc.
- Joachim Metzger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in high-k metal gate electrode structures...
- Patent number 8,298,894
- Issue date Oct 30, 2012
- GLOBALFOUNDRIES Inc.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURES FOR A FERROELECTRIC FIELD-EFFECT TRANSISTOR AND RELATED...
- Publication number 20240014320
- Publication date Jan 11, 2024
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Halid Mulaosmanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE COMPRISING AN ALUMINUM GATE ELECTRODE PORTI...
- Publication number 20160204218
- Publication date Jul 14, 2016
- GLOBALFOUNDRIES INC.
- Carsten Grass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FEROOELECTRIC HAFNIUM OXIDE AND METHOD FO...
- Publication number 20150214322
- Publication date Jul 30, 2015
- GLOBALFOUNDRIES INC.
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER...
- Publication number 20140015058
- Publication date Jan 16, 2014
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH FLUORINE PASSIVATION
- Publication number 20130344692
- Publication date Dec 26, 2013
- GLOBALFOUNDRIES INC.
- Dina Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH NARROW, METAL FILL...
- Publication number 20130224927
- Publication date Aug 29, 2013
- GLOBALFOUNDRIES INC.
- Sven Schmidbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...
- Publication number 20130017679
- Publication date Jan 17, 2013
- GLOBALFOUNDRIES INC.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Stack Formation for Replacement Gate Technology
- Publication number 20120315749
- Publication date Dec 13, 2012
- GLOBALFOUNDRIES INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING EQUIVALENT THICKNESS OF HIGH-K DIELECTRICS IN FIELD EFFECT...
- Publication number 20120238086
- Publication date Sep 20, 2012
- GLOBALFOUNDRIES INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Contact Elements and Metal Silicide...
- Publication number 20110266638
- Publication date Nov 3, 2011
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FORMED BY A REPLACEMENT GATE APPROACH BASED ON...
- Publication number 20110186931
- Publication date Aug 4, 2011
- Gerd Marxsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE S...
- Publication number 20110127590
- Publication date Jun 2, 2011
- Robert Binder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR...
- Publication number 20100327373
- Publication date Dec 30, 2010
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...
- Publication number 20100301427
- Publication date Dec 2, 2010
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY CONFINING A METAL CAP...
- Publication number 20100221906
- Publication date Sep 2, 2010
- Joachim Metzger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER...
- Publication number 20100193872
- Publication date Aug 5, 2010
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS

Robert Binder

Person

Patents Grantslast 30 patents

Semiconductor device with ferroelectric hafnium oxide and method fo...

Methods for fabricating integrated circuits with fluorine passivation

Metal gate stack formation for replacement gate technology

Work function adjustment in a high-K gate electrode structure after...

Methods for fabricating integrated circuits with narrow, metal fill...

Uniform high-k metal gate stacks by adjusting threshold voltage for...

Work function adjustment in high-K metal gate electrode structures...

Semiconductor device formed by a replacement gate approach based on...

Work function adjustment in a high-k gate electrode structure after...

Enhancing integrity of a high-k gate stack by confining a metal cap...

Work function adjustment in high-k metal gate electrode structures...

Patents Applicationslast 30 patents

STRUCTURES FOR A FERROELECTRIC FIELD-EFFECT TRANSISTOR AND RELATED...

SEMICONDUCTOR STRUCTURE COMPRISING AN ALUMINUM GATE ELECTRODE PORTI...

SEMICONDUCTOR DEVICE WITH FEROOELECTRIC HAFNIUM OXIDE AND METHOD FO...

WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER...

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH FLUORINE PASSIVATION

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH NARROW, METAL FILL...

WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...

Metal Gate Stack Formation for Replacement Gate Technology

REDUCING EQUIVALENT THICKNESS OF HIGH-K DIELECTRICS IN FIELD EFFECT...

Semiconductor Device Comprising Contact Elements and Metal Silicide...

SEMICONDUCTOR DEVICE FORMED BY A REPLACEMENT GATE APPROACH BASED ON...

INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE S...

UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR...

WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...

ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY CONFINING A METAL CAP...

WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER...