Robert C. Chen

Person

Los Altos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Punch-through via with conformal barrier liner
- Patent number 6,522,013
- Issue date Feb 18, 2003
- Advanced Micro Devices, Inc.
- Robert C. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
H2 diffusion barrier formation by nitrogen incorporation in oxide...
- Patent number 6,472,751
- Issue date Oct 29, 2002
- Advanced Micro Devices, Inc.
- Robert C. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
H2 diffusion barrier formation by nitrogen incorporation in oxide l...
- Patent number 6,194,328
- Issue date Feb 27, 2001
- Advanced Micro Devices, Inc.
- Robert C. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Borderless vias with CVD barrier layer
- Patent number 6,159,851
- Issue date Dec 12, 2000
- Advanced Micro Devices, Inc.
- Robert C. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HSQ with high plasma etching resistance surface for borderless vias
- Patent number 6,087,724
- Issue date Jul 11, 2000
- Advanced Micro Devices, Inc.
- Jeffrey A. Shields
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt silicidation using tungsten nitride capping layer
- Patent number 6,083,817
- Issue date Jul 4, 2000
- Advanced Micro Devices, Inc.
- Takeshi Nogami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HSQ with high plasma etching resistance surface for borderless vias
- Patent number 6,083,851
- Issue date Jul 4, 2000
- Advanced Micro Devices, Inc.
- Jeffrey A. Shields
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Borderless vias with HSQ gap filled patterned metal layers
- Patent number 6,060,384
- Issue date May 9, 2000
- Advanced Micro Devices, Inc.
- Robert C. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of prevention of degradation of low dielectric constant gap-...
- Patent number 6,043,147
- Issue date Mar 28, 2000
- Advanced Micro Devices, Inc.
- Robert C. Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Tapered isolated metal profile to reduce dielectric layer cracking
- Patent number 5,973,387
- Issue date Oct 26, 1999
- Advanced Micro Devices, Inc.
- Robert C. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Borderless vias with CVD barrier layer
- Patent number 5,969,425
- Issue date Oct 19, 1999
- Advanced Micro Devices, Inc.
- Robert C. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Borderless vias with HSQ gap filled patterned metal layers
- Patent number 5,866,945
- Issue date Feb 2, 1999
- Advanced Micro Devices
- Robert C. Chen
- H01 - BASIC ELECTRIC ELEMENTS

Robert C. Chen

Person

Patents Grantslast 30 patents

Punch-through via with conformal barrier liner

H2 diffusion barrier formation by nitrogen incorporation in oxide...

H2 diffusion barrier formation by nitrogen incorporation in oxide l...

Borderless vias with CVD barrier layer

HSQ with high plasma etching resistance surface for borderless vias

Cobalt silicidation using tungsten nitride capping layer

HSQ with high plasma etching resistance surface for borderless vias

Borderless vias with HSQ gap filled patterned metal layers

Method of prevention of degradation of low dielectric constant gap-...

Tapered isolated metal profile to reduce dielectric layer cracking

Borderless vias with CVD barrier layer

Borderless vias with HSQ gap filled patterned metal layers