Robert D. Clark

Person

Leuven, BE

People

Patents Applicationslast 30 patents

Information Patent Application
AREA SELECTIVE DEPOSITION OF METALS FOR ELECTRONIC DEVICES
- Publication number 20250154643
- Publication date May 15, 2025
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING A MEMORY DEVICE IN A RECESSED FEATURE
- Publication number 20250140551
- Publication date May 1, 2025
- TOKYO ELECTRON LIMITED
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Manufacturing Platform with In-Situ Electrical Bias a...
- Publication number 20250120154
- Publication date Apr 10, 2025
- TOKYO ELECTRON LIMITED
- Dina H. Triyoso
Information Patent Application
2-DIMENSIONAL MATERIALS AS BARRIER LAYERS IN METALLIZATION OF SEMIC...
- Publication number 20240387371
- Publication date Nov 21, 2024
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Processing Using a Two-Dimensional Polymer
- Publication number 20240363333
- Publication date Oct 31, 2024
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL ETCHING OF RUTHENIUM
- Publication number 20240153781
- Publication date May 9, 2024
- TOKYO ELECTRON LIMITED
- Hisashi Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicidation Process for Semiconductor Devices
- Publication number 20230326764
- Publication date Oct 12, 2023
- TOKYO ELECTRON LIMITED
- Robert D. Clark
- H01 - BASIC ELECTRIC ELEMENTS

Robert D. Clark

Person

Patents Applicationslast 30 patents

AREA SELECTIVE DEPOSITION OF METALS FOR ELECTRONIC DEVICES

METHOD OF FORMING A MEMORY DEVICE IN A RECESSED FEATURE

Semiconductor Manufacturing Platform with In-Situ Electrical Bias a...

2-DIMENSIONAL MATERIALS AS BARRIER LAYERS IN METALLIZATION OF SEMIC...

Semiconductor Processing Using a Two-Dimensional Polymer

THERMAL ETCHING OF RUTHENIUM

Silicidation Process for Semiconductor Devices