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Robert E. Stahlbush
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Silver Spring, MD, US
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Patents Grants
last 30 patents
Information
Patent Grant
UV laser slicing of β-Ga2O3 by micro-crack generation and propagation
Patent number
11,171,055
Issue date
Nov 9, 2021
The Government of the United States of America, as represented by the Secreta...
Nadeemullah A. Mahadik
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Basal plane dislocation elimination in 4H—SiC by pulsed rapid therm...
Patent number
10,403,509
Issue date
Sep 3, 2019
The Government of the United States of America, as represented by the Secreta...
Marko J. Tadjer
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reduction of basal plane dislocations in epitaxial SiC using an in-...
Patent number
10,256,094
Issue date
Apr 9, 2019
The Government of the United States of America, as represented by the Secreta...
Rachael L. Myers-Ward
C30 - CRYSTAL GROWTH
Information
Patent Grant
Reduction of basal plane dislocations in epitaxial SiC using an in-...
Patent number
10,256,090
Issue date
Apr 9, 2019
The United States of America, as represented by the Secretary of the Navy
Rachael L. Myers-Ward
C30 - CRYSTAL GROWTH
Information
Patent Grant
Removal of basal plane dislocations from silicon carbide substrate...
Patent number
10,020,366
Issue date
Jul 10, 2018
The United States of America, as represented by the Secretary of the Navy
Nadeemullah A. Mahadik
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reduction of basal plane dislocations in epitaxial SiC
Patent number
9,464,366
Issue date
Oct 11, 2016
The United States of America, as represented by the Secretary of the Navy
Rachael L Myers-Ward
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Elimination of basal plane dislocations in post growth silicon carb...
Patent number
9,129,799
Issue date
Sep 8, 2015
The United States of America, as represented by the Secretary of the Navy
Nadeemullah A. Mahadik
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of producing epitaxial layers with low basal plane dislocati...
Patent number
8,652,255
Issue date
Feb 18, 2014
The United States of America, as represented by the Secretary of the Navy
Robert E Stahlbush
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of mediating forward voltage drift in a SiC device
Patent number
7,915,143
Issue date
Mar 29, 2011
The United States of America as represented by the Secretary of the Navy
Joshua D. Caldwell
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
UV Laser slicing of Beta-Ga2O3 by micro-crack generation and propag...
Publication number
20200251389
Publication date
Aug 6, 2020
The Government of the United State of America as represented by the Secretary...
NADEEMULLAH A. MAHADIK
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
REMOVAL OF BASAL PLANE DISLOCATIONS FROM SILICON CARBIDE SUBSTRATE...
Publication number
20170092724
Publication date
Mar 30, 2017
The Government of the United States of America, as represented by the Secreta...
Nadeemullah A. Mahadik
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD AND APPARATUS FOR REMOVING EXPERIMENTAL ARTIFACTS FROM ENSEM...
Publication number
20160056065
Publication date
Feb 25, 2016
ROBERT E. STAHLBUSH
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
BASAL PLANE DISLOCATION ELIMINATION IN 4H-SIC BY PULSED RAPID THERM...
Publication number
20150287613
Publication date
Oct 8, 2015
Marko J. Tadjer
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ELIMINATION OF BASAL PLANE DISLOCATIONS IN POST GROWTH SILICON CARB...
Publication number
20150155166
Publication date
Jun 4, 2015
Nadeemullah A. Mahadik
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-...
Publication number
20140190399
Publication date
Jul 10, 2014
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
Rachael L. Myers-Ward
C30 - CRYSTAL GROWTH
Information
Patent Application
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-...
Publication number
20140193965
Publication date
Jul 10, 2014
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
Rachael L. Myers-Ward
C30 - CRYSTAL GROWTH
Information
Patent Application
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SIC
Publication number
20110045281
Publication date
Feb 24, 2011
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
Rachael L. Myers-Ward
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD OF MEDIATING FORWARD VOLTAGE DRIFT IN A SIC DEVICE
Publication number
20090273390
Publication date
Nov 5, 2009
JOSHUA D. CALDWELL
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD OF PRODUCING EPITAXIAL LAYERS WITH LOW BASAL PLANE DISLOCATI...
Publication number
20090114148
Publication date
May 7, 2009
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
Robert E. Stahlbush
C30 - CRYSTAL GROWTH