Robert EHLERT

Person

Portand, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Source or drain structures with high phosphorous dopant concentration
- Patent number 11,955,482
- Issue date Apr 9, 2024
- Intel Corporation
- Robert Ehlert
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH PHOSPHOROUS AND ARSENIC DOPANTS
- Publication number 20240063274
- Publication date Feb 22, 2024
- Intel Corporation
- Patrick WALLACE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES TO ENABLE LOWER SUBTHRESHOLD SLOPE IN GALLIUM NITRI...
- Publication number 20230197840
- Publication date Jun 22, 2023
- Intel Corporation
- Sanyam Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-FLOW OF P-TYPE DOPANT PRECURSOR TO ENABLE THINNER P-GAN LAYERS...
- Publication number 20230132548
- Publication date May 4, 2023
- Intel Corporation
- Atsunori Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
pGaN ENHANCEMENT MODE HEMTs WITH DOPANT DIFFUSION SPACER
- Publication number 20220199816
- Publication date Jun 23, 2022
- Intel Corporation
- Michael Beumer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED GALLIUM NITRIDE (GAN) AND COMPLEMENTARY METAL OXIDE S...
- Publication number 20220093790
- Publication date Mar 24, 2022
- Intel Corporation
- Glenn A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL-III-NITRIDE ALLOYS FOR ROBUST HIGH PERFORMANCE HEMTS
- Publication number 20210399119
- Publication date Dec 23, 2021
- Intel Corporation
- Suresh VISHWANATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH HIGH PHOSPHOROUS DOPANT CONCENTRATION
- Publication number 20210358908
- Publication date Nov 18, 2021
- Intel Corporation
- Robert EHLERT
- H01 - BASIC ELECTRIC ELEMENTS

Robert EHLERT

Person

Patents Grantslast 30 patents

Source or drain structures with high phosphorous dopant concentration

Patents Applicationslast 30 patents

SOURCE OR DRAIN STRUCTURES WITH PHOSPHOROUS AND ARSENIC DOPANTS

GATE STRUCTURES TO ENABLE LOWER SUBTHRESHOLD SLOPE IN GALLIUM NITRI...

PRE-FLOW OF P-TYPE DOPANT PRECURSOR TO ENABLE THINNER P-GAN LAYERS...

pGaN ENHANCEMENT MODE HEMTs WITH DOPANT DIFFUSION SPACER

CO-INTEGRATED GALLIUM NITRIDE (GAN) AND COMPLEMENTARY METAL OXIDE S...

TRANSITION METAL-III-NITRIDE ALLOYS FOR ROBUST HIGH PERFORMANCE HEMTS

SOURCE OR DRAIN STRUCTURES WITH HIGH PHOSPHOROUS DOPANT CONCENTRATION