Robert J. Bowen

Person

Taunton, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Structure and method to achieve large strain in NS without addition...
- Patent number 10,283,638
- Issue date May 7, 2019
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained stacked nanosheet FETs and/or quantum well stacked nanosheet
- Patent number 10,170,549
- Issue date Jan 1, 2019
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET devices including recessed source/drain regions having optim...
- Patent number 10,147,793
- Issue date Dec 4, 2018
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-efficiency solar energy device
- Patent number 9,923,161
- Issue date Mar 20, 2018
- Lockheed Martin Corporation
- Gregory T. Daly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device contact structures including heterojunctions for low contact...
- Patent number 9,917,158
- Issue date Mar 13, 2018
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to achieve compressively strained Si NS
- Patent number 9,831,323
- Issue date Nov 28, 2017
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer fin field effect transistor devices and methods of form...
- Patent number 9,793,403
- Issue date Oct 17, 2017
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor devices including recessed source-drain region...
- Patent number 9,716,176
- Issue date Jul 25, 2017
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained stacked nanosheet FETS and/or quantum well stacked nanosheet
- Patent number 9,711,414
- Issue date Jul 18, 2017
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finfet devices including high mobility channel materials with mater...
- Patent number 9,685,509
- Issue date Jun 20, 2017
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermionically-overdriven tunnel FETs and methods of fabricating th...
- Patent number 9,647,098
- Issue date May 9, 2017
- Samsung Electronics Co., Ltd.
- Borna Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistivity damascene interconnect
- Patent number 9,613,907
- Issue date Apr 4, 2017
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including FinFETs and methods of forming...
- Patent number 9,583,590
- Issue date Feb 28, 2017
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline multiple-nanosheet strained channel FETs and methods of...
- Patent number 9,570,609
- Issue date Feb 14, 2017
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit devices including strained channel regions and m...
- Patent number 9,525,053
- Issue date Dec 20, 2016
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with structures for suppression of parasitic...
- Patent number 9,461,114
- Issue date Oct 4, 2016
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Confined semi-metal field effect transistor
- Patent number 9,431,529
- Issue date Aug 30, 2016
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-efficiency solar energy device
- Patent number 9,373,734
- Issue date Jun 21, 2016
- Lockheed Martin Corporation
- Gregory T. Daly
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Integrated circuits with Si and non-Si nanosheet FET co-integration...
- Patent number 9,287,357
- Issue date Mar 15, 2016
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of fabricating quantum well field effect transistors having...
- Patent number 9,236,444
- Issue date Jan 12, 2016
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including FinFETS and methods of forming...
- Patent number 9,178,045
- Issue date Nov 3, 2015
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified hybrid infrared focal plane array architecture for large s...
- Patent number 9,123,607
- Issue date Sep 1, 2015
- Lockheed Martin Corporation
- Ryan Michael Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum interference based logic devices including electron monochr...
- Patent number 9,112,130
- Issue date Aug 18, 2015
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor patterns including reduced disloca...
- Patent number 9,064,699
- Issue date Jun 23, 2015
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum electro-optical device using CMOS transistor with reverse p...
- Patent number 9,000,505
- Issue date Apr 7, 2015
- Texas Instruments Incorporated
- Henry L. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated resonant tunneling diode
- Patent number 8,362,462
- Issue date Jan 29, 2013
- Texas Instruments Incorporated
- Henry L. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated resonant tunneling diode
- Patent number 7,943,450
- Issue date May 17, 2011
- Texas Instruments Incorporated
- Henry L. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated resonant tunneling diode
- Patent number 7,910,918
- Issue date Mar 22, 2011
- Texas Instruments Incorporated
- Henry L. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming enhanced device via transverse stress
- Patent number 7,534,676
- Issue date May 19, 2009
- Texas Instruments Incorporated
- Robert C. Bowen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced PMOS via transverse stress
- Patent number 7,268,399
- Issue date Sep 11, 2007
- Texas Instruments Incorporated
- Robert C. Bowen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MAKING HIGH-EFFICIENCY SOLAR ENERGY DEVICE
- Publication number 20180212176
- Publication date Jul 26, 2018
- Lockheed Martin Corporation
- Gregory T. Daly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO ACHIEVE COMPRESSIVELY STRAINED SI NS
- Publication number 20170263728
- Publication date Sep 14, 2017
- Samsung Electronics Co., Ltd.
- Jorge A. KITTL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO ACHIEVE LARGE STRAIN IN NS WITHOUT ADDITION...
- Publication number 20170040455
- Publication date Feb 9, 2017
- Jorge A. KITTL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER FIN FIELD EFFECT TRANSISTOR DEVICES AND METHODS OF FORM...
- Publication number 20160308055
- Publication date Oct 20, 2016
- BORNA J. OBRADOVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH STRUCTURES FOR SUPPRESSION OF PARASITIC...
- Publication number 20160163796
- Publication date Jun 9, 2016
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED STACKED NANOSHEET FETS AND/OR QUANTUM WELL STACKED NANOSHEET
- Publication number 20160111337
- Publication date Apr 21, 2016
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED STACKED NANOSHEET FETS AND/OR QUANTUM WELL STACKED NANOSHEET
- Publication number 20160111284
- Publication date Apr 21, 2016
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE CONTACT STRUCTURES INCLUDING HETEROJUNCTIONS FOR LOW CONTACT...
- Publication number 20160079372
- Publication date Mar 17, 2016
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECTANGULAR NANOSHEET FABRICATION
- Publication number 20160071729
- Publication date Mar 10, 2016
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED SEMI-METAL FIELD EFFECT TRANSISTOR
- Publication number 20160071970
- Publication date Mar 10, 2016
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTIVITY DAMASCENE INTERCONNECT
- Publication number 20160035675
- Publication date Feb 4, 2016
- Samsung Electronics Co., Ltd.
- Ganesh HEGDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMIONICALLY-OVERDRIVEN TUNNEL FETS AND METHODS OF FABRICATING TH...
- Publication number 20160020305
- Publication date Jan 21, 2016
- Samsung Electronics Co., Ltd.
- Borna Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuits with Si and Non-Si Nanosheet FET Co-Integration...
- Publication number 20150364542
- Publication date Dec 17, 2015
- Samsung Electronics Co., Ltd.
- Mark S. RODDER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTALLINE MULTIPLE-NANOSHEET STRAINED CHANNEL FETS AND METHODS OF...
- Publication number 20150295084
- Publication date Oct 15, 2015
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING FINFETS AND METHODS OF FORMING...
- Publication number 20150243756
- Publication date Aug 27, 2015
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SEMICONDUCTOR DEVICES INCLUDING RECESSED SOURCE-DRAIN REGION...
- Publication number 20150145003
- Publication date May 28, 2015
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STRAINED CHANNEL REGIONS AND M...
- Publication number 20150123075
- Publication date May 7, 2015
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM INTERFERENCE BASED LOGIC DEVICES INCLUDING ELECTRON MONOCHR...
- Publication number 20150123701
- Publication date May 7, 2015
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR PATTERNS INCLUDING REDUCED DISLOCA...
- Publication number 20150093884
- Publication date Apr 2, 2015
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING FINFETS AND METHODS OF FORMING...
- Publication number 20150093868
- Publication date Apr 2, 2015
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICES INCLUDING HIGH MOBILITY CHANNEL MATERIALS WITH MATER...
- Publication number 20150035008
- Publication date Feb 5, 2015
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICES INCLUDING RECESSED SOURCE/DRAIN REGIONS HAVING OPTIM...
- Publication number 20150035074
- Publication date Feb 5, 2015
- Borna J. Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING QUANTUM WELL FIELD EFFECT TRANSISTORS HAVING...
- Publication number 20140329374
- Publication date Nov 6, 2014
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM ELECTRO-OPTICAL DEVICE USING CMOS TRANSISTOR WITH REVERSE P...
- Publication number 20120098590
- Publication date Apr 26, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Henry L. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED RESONANT TUNNELING DIODE
- Publication number 20110127572
- Publication date Jun 2, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Henry L. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED RESONANT TUNNELING DIODE
- Publication number 20100093140
- Publication date Apr 15, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Henry L. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED RESONANT TUNNELING DIODE
- Publication number 20100065823
- Publication date Mar 18, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Henry L. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced PMOS via transverse stress
- Publication number 20070264767
- Publication date Nov 15, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Robert C. Bowen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced PMOS via transverse stress
- Publication number 20060043424
- Publication date Mar 2, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Robert C. Bowen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a retrograde well in a transistor to enhance performance of...
- Publication number 20050224874
- Publication date Oct 13, 2005
- Srinivasan Chakravarthi
- H01 - BASIC ELECTRIC ELEMENTS

Robert J. Bowen

Person

Patents Grantslast 30 patents

Structure and method to achieve large strain in NS without addition...

Strained stacked nanosheet FETs and/or quantum well stacked nanosheet

FinFET devices including recessed source/drain regions having optim...

High-efficiency solar energy device

Device contact structures including heterojunctions for low contact...

Structure and method to achieve compressively strained Si NS

Multi-layer fin field effect transistor devices and methods of form...

FinFET semiconductor devices including recessed source-drain region...

Strained stacked nanosheet FETS and/or quantum well stacked nanosheet

Finfet devices including high mobility channel materials with mater...

Thermionically-overdriven tunnel FETs and methods of fabricating th...

Low resistivity damascene interconnect

Integrated circuit devices including FinFETs and methods of forming...

Crystalline multiple-nanosheet strained channel FETs and methods of...

Integrated circuit devices including strained channel regions and m...

Semiconductor devices with structures for suppression of parasitic...

Confined semi-metal field effect transistor

High-efficiency solar energy device

Integrated circuits with Si and non-Si nanosheet FET co-integration...

Methods of fabricating quantum well field effect transistors having...

Integrated circuit devices including FinFETS and methods of forming...

Modified hybrid infrared focal plane array architecture for large s...

Quantum interference based logic devices including electron monochr...

Methods of forming semiconductor patterns including reduced disloca...

Quantum electro-optical device using CMOS transistor with reverse p...

Gated resonant tunneling diode

Gated resonant tunneling diode

Gated resonant tunneling diode

Method of forming enhanced device via transverse stress

Enhanced PMOS via transverse stress

Patents Applicationslast 30 patents

METHOD OF MAKING HIGH-EFFICIENCY SOLAR ENERGY DEVICE

STRUCTURE AND METHOD TO ACHIEVE COMPRESSIVELY STRAINED SI NS

STRUCTURE AND METHOD TO ACHIEVE LARGE STRAIN IN NS WITHOUT ADDITION...

MULTI-LAYER FIN FIELD EFFECT TRANSISTOR DEVICES AND METHODS OF FORM...

SEMICONDUCTOR DEVICES WITH STRUCTURES FOR SUPPRESSION OF PARASITIC...

STRAINED STACKED NANOSHEET FETS AND/OR QUANTUM WELL STACKED NANOSHEET

STRAINED STACKED NANOSHEET FETS AND/OR QUANTUM WELL STACKED NANOSHEET

DEVICE CONTACT STRUCTURES INCLUDING HETEROJUNCTIONS FOR LOW CONTACT...

RECTANGULAR NANOSHEET FABRICATION

CONFINED SEMI-METAL FIELD EFFECT TRANSISTOR

LOW RESISTIVITY DAMASCENE INTERCONNECT

THERMIONICALLY-OVERDRIVEN TUNNEL FETS AND METHODS OF FABRICATING TH...

Integrated Circuits with Si and Non-Si Nanosheet FET Co-Integration...

CRYSTALLINE MULTIPLE-NANOSHEET STRAINED CHANNEL FETS AND METHODS OF...

INTEGRATED CIRCUIT DEVICES INCLUDING FINFETS AND METHODS OF FORMING...

FINFET SEMICONDUCTOR DEVICES INCLUDING RECESSED SOURCE-DRAIN REGION...

INTEGRATED CIRCUIT DEVICES INCLUDING STRAINED CHANNEL REGIONS AND M...

QUANTUM INTERFERENCE BASED LOGIC DEVICES INCLUDING ELECTRON MONOCHR...

METHODS OF FORMING SEMICONDUCTOR PATTERNS INCLUDING REDUCED DISLOCA...

INTEGRATED CIRCUIT DEVICES INCLUDING FINFETS AND METHODS OF FORMING...

FINFET DEVICES INCLUDING HIGH MOBILITY CHANNEL MATERIALS WITH MATER...

FINFET DEVICES INCLUDING RECESSED SOURCE/DRAIN REGIONS HAVING OPTIM...

METHODS OF FABRICATING QUANTUM WELL FIELD EFFECT TRANSISTORS HAVING...

QUANTUM ELECTRO-OPTICAL DEVICE USING CMOS TRANSISTOR WITH REVERSE P...

GATED RESONANT TUNNELING DIODE

GATED RESONANT TUNNELING DIODE

GATED RESONANT TUNNELING DIODE

Enhanced PMOS via transverse stress

Enhanced PMOS via transverse stress

Forming a retrograde well in a transistor to enhance performance of...