Robert James Pascde Lander

Person

Leauven, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Fin field effect transistor (FinFET)
- Patent number 9,793,408
- Issue date Oct 17, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate arrangement
- Patent number 9,391,147
- Issue date Jul 12, 2016
- NXP B.V.
- Robert James Pascoe Lander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resonator
- Patent number 9,318,997
- Issue date Apr 19, 2016
- NXP, B.V.
- Casper van der Avoort
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
MEMS microphone
- Patent number 9,061,889
- Issue date Jun 23, 2015
- NXP, B.V.
- Robert J. P. Lander
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
FinFET drive strength modification
- Patent number 9,048,122
- Issue date Jun 2, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas Merelle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (finFET)
- Patent number 8,994,112
- Issue date Mar 31, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with MEMS element and manufacturing method thereof
- Patent number 8,841,736
- Issue date Sep 23, 2014
- NXP, B.V.
- Robert James Pascoe Lander
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
FinFET drive strength modification
- Patent number 8,779,527
- Issue date Jul 15, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas Merelle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resonator
- Patent number 8,669,822
- Issue date Mar 11, 2014
- NXP, B.V.
- Robert J. P. Lander
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
MEMS resonators
- Patent number 8,390,387
- Issue date Mar 5, 2013
- NXP B.V.
- Robert James Pascoe Lander
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semidonductor device having stressed metal gate and methods of manu...
- Patent number 8,368,149
- Issue date Feb 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Robert James Pascoe Lander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET method and device
- Patent number 8,216,894
- Issue date Jul 10, 2012
- NXP B.V.
- Robert J. P. Lander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing such a semiconduct...
- Patent number 7,763,944
- Issue date Jul 27, 2010
- NXP B.V.
- Jacob C. Hooker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing MOS transistors with gate electrodes formed...
- Patent number 7,326,631
- Issue date Feb 5, 2008
- NXP B.V.
- Robert Lander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabricated by a method of reducing the contact...
- Patent number 7,320,939
- Issue date Jan 22, 2008
- Interuniversitair Microelektronica Centrum (IMEC)
- Robert Lander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing the contact resistance of the connection region...
- Patent number 7,189,648
- Issue date Mar 13, 2007
- Interuniversitair Microelektronica Centrum (IMEC)
- Robert Lander
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUBSTRATE ARRANGEMENT
- Publication number 20150295052
- Publication date Oct 15, 2015
- NXP B.V.
- Robert James Pascoe LANDER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Finfet Drive Strength Modification
- Publication number 20150270272
- Publication date Sep 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas Merelle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET)
- Publication number 20150200302
- Publication date Jul 16, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Gerben DOORNBOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DRIVE STRENGTH MODIFICATION
- Publication number 20140319609
- Publication date Oct 30, 2014
- Thomas Merelle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESONATOR
- Publication number 20140176246
- Publication date Jun 26, 2014
- NXP B.V.
- Casper van der Avoort
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
INTEGRATED CIRCUIT WITH MEMS ELEMENT AND MANUFACTURING METHOD THEREOF
- Publication number 20140042563
- Publication date Feb 13, 2014
- NXP B.V.
- Robert James Pascoe Lander
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
FINFET DRIVE STRENGTH MODIFICATION
- Publication number 20130026567
- Publication date Jan 31, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Thomas Merelle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMS MICROPHONE
- Publication number 20120045078
- Publication date Feb 23, 2012
- NXP B.V.
- Robert J. P. Lander
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
RESONATOR
- Publication number 20120001700
- Publication date Jan 5, 2012
- NXP B.V.
- Robert J. P. Lander
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Fin Field Effect Transistor (FINFET)
- Publication number 20110169101
- Publication date Jul 14, 2011
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AN INTEGRATED CIRCUIT COM...
- Publication number 20110163393
- Publication date Jul 7, 2011
- NXP B.V.
- Robert J. P. Lander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET METHOD AND DEVICE
- Publication number 20110089493
- Publication date Apr 21, 2011
- NXP B.V.
- Robert J. P. Lander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH DIFFERENT METALLI...
- Publication number 20090302389
- Publication date Dec 10, 2009
- NXP B.V.
- Robert Lander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconduct Device and Method of Manufacturing Such a Semiconductor...
- Publication number 20080211032
- Publication date Sep 4, 2008
- Koninklijke Philips Electronics N.V.
- Jacob C. Hooker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device fabricated by a method of reducing the contact...
- Publication number 20070020930
- Publication date Jan 25, 2007
- Robert Lander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device and semiconductor de...
- Publication number 20060138475
- Publication date Jun 29, 2006
- Robert James Pascoe Lander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device with mos transistors...
- Publication number 20060134848
- Publication date Jun 22, 2006
- Koninklijke Philips Electronics N.V.
- Robert James Pascde Lander
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reducing the contact resistance of the connection region...
- Publication number 20050112875
- Publication date May 26, 2005
- Robert Lander
- H01 - BASIC ELECTRIC ELEMENTS

Robert James Pascde Lander

Person

Patents Grantslast 30 patents

Fin field effect transistor (FinFET)

Substrate arrangement

Resonator

MEMS microphone

FinFET drive strength modification

Fin field effect transistor (finFET)

Integrated circuit with MEMS element and manufacturing method thereof

FinFET drive strength modification

Resonator

MEMS resonators

Semidonductor device having stressed metal gate and methods of manu...

FinFET method and device

Semiconductor device and method of manufacturing such a semiconduct...

Method of manufacturing MOS transistors with gate electrodes formed...

Semiconductor device fabricated by a method of reducing the contact...

Method for reducing the contact resistance of the connection region...

Patents Applicationslast 30 patents

SUBSTRATE ARRANGEMENT

Finfet Drive Strength Modification

FIN FIELD EFFECT TRANSISTOR (FINFET)

FINFET DRIVE STRENGTH MODIFICATION

RESONATOR

INTEGRATED CIRCUIT WITH MEMS ELEMENT AND MANUFACTURING METHOD THEREOF

FINFET DRIVE STRENGTH MODIFICATION

MEMS MICROPHONE

RESONATOR

Fin Field Effect Transistor (FINFET)

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AN INTEGRATED CIRCUIT COM...

FINFET METHOD AND DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH DIFFERENT METALLI...

Semiconduct Device and Method of Manufacturing Such a Semiconductor...

Semiconductor device fabricated by a method of reducing the contact...

Method of manufacturing a semiconductor device and semiconductor de...

Method of manufacturing a semiconductor device with mos transistors...

Method for reducing the contact resistance of the connection region...