Robert L. Virkus

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a recessed contact bipolar transistor
- Patent number 5,316,957
- Issue date May 31, 1994
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a recessed contact bipolar transistor and field e...
- Patent number 5,075,241
- Issue date Dec 24, 1991
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a horizontal self-aligned transistor
- Patent number 5,019,525
- Issue date May 28, 1991
- Texas Instruments Incorporated
- Robert L. Virkus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced electromigration resistant interconnect structure and process
- Patent number 5,001,541
- Issue date Mar 19, 1991
- Texas Instruments Incorporated
- Robert L. Virkus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a recessed contact bipolar transistor and field...
- Patent number 4,985,744
- Issue date Jan 15, 1991
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anodizable strain layer for SOI semiconductor structures
- Patent number 4,982,263
- Issue date Jan 1, 1991
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed contact bipolar transistor and method
- Patent number 4,897,703
- Issue date Jan 30, 1990
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anodizable strain layer for SOI semiconductor structures
- Patent number 4,849,370
- Issue date Jul 18, 1989
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS

Robert L. Virkus

Person

Patents Grantslast 30 patents

Method of forming a recessed contact bipolar transistor

Method of forming a recessed contact bipolar transistor and field e...

Method for forming a horizontal self-aligned transistor

Advanced electromigration resistant interconnect structure and process

Method for forming a recessed contact bipolar transistor and field...

Anodizable strain layer for SOI semiconductor structures

Recessed contact bipolar transistor and method

Anodizable strain layer for SOI semiconductor structures