Robert M. Farrell JR.

Person

Goleta, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semi-polar III-nitride optoelectronic devices on m-plane substrates...
- Patent number 11,552,452
- Issue date Jan 10, 2023
- The Regents of the University of California
- Po Shan Hsu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
III-nitride light emitting diodes with tunnel junctions wafer bonde...
- Patent number 11,411,137
- Issue date Aug 9, 2022
- The Regents of the University of California
- Asad J. Mughal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...
- Patent number 10,529,892
- Issue date Jan 7, 2020
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Monolithic integration of optically pumped III-nitride devices
- Patent number 10,186,835
- Issue date Jan 22, 2019
- The Regents of the University of California
- Robert M. Farrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-polar III-nitride optoelectronic devices on M-plane substrates...
- Patent number 9,917,422
- Issue date Mar 13, 2018
- The Regents of the University of California
- Po Shan Hsu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...
- Patent number 9,793,435
- Issue date Oct 17, 2017
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High power blue-violet III-nitride semipolar laser diodes
- Patent number 9,356,431
- Issue date May 31, 2016
- The Regents of the University of California
- Arash Pourhashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...
- Patent number 9,231,376
- Issue date Jan 5, 2016
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semi-polar III-nitride optoelectronic devices on M-plane substrates...
- Patent number 9,077,151
- Issue date Jul 7, 2015
- The Regents of the University of California
- Po Shan Hsu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes...
- Patent number 9,040,327
- Issue date May 26, 2015
- The Regents of the University of California
- Daniel F. Feezell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of improving surface morphology of (Ga,Al,In,B)N thin films...
- Patent number 8,795,430
- Issue date Aug 5, 2014
- The Regents of the University of California
- Robert M. Farrell
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...
- Patent number 8,686,466
- Issue date Apr 1, 2014
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optimization of laser bar orientation for nonpolar and semipolar (G...
- Patent number 8,588,260
- Issue date Nov 19, 2013
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes...
- Patent number 8,211,723
- Issue date Jul 3, 2012
- The Regents of the University of California
- Daniel F. Feezell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optimization of laser bar orientation for nonpolar and semipolar (G...
- Patent number 7,839,903
- Issue date Nov 23, 2010
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser
- Patent number 7,480,322
- Issue date Jan 20, 2009
- The Regents of the University of California
- Daniel F. Feezell
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONTACT ARCHITECTURES FOR TUNNEL JUNCTION DEVICES
- Publication number 20210104504
- Publication date Apr 8, 2021
- The Regents of the University of California
- Benjamin P. Yonkee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE LIGHT EMITTING DIODES WITH TUNNEL JUNCTIONS WAFER BONDE...
- Publication number 20200335663
- Publication date Oct 22, 2020
- The Regents of the University of California
- Asad J. Mughal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES...
- Publication number 20180152004
- Publication date May 31, 2018
- The Regents of the University of California
- Po Shan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...
- Publication number 20180013035
- Publication date Jan 11, 2018
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Application
MONOLITHIC INTEGRATION OF OPTICALLY PUMPED III-NITRIDE DEVICES
- Publication number 20160322782
- Publication date Nov 3, 2016
- The Regents of the University of California
- Robert M. Farrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...
- Publication number 20160079738
- Publication date Mar 17, 2016
- The Regents of the University of California
- Robert M. Farrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER BLUE-VIOLET III-NITRIDE SEMIPOLAR LASER DIODES
- Publication number 20150372456
- Publication date Dec 24, 2015
- The Regents of the University of California
- Arash Pourhashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES...
- Publication number 20150255959
- Publication date Sep 10, 2015
- The Regents of the University of California
- Po Shan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga,Al,In,B)N THIN FILMS...
- Publication number 20140308769
- Publication date Oct 16, 2014
- The Regents of the University of California
- Robert M. Farrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...
- Publication number 20140211820
- Publication date Jul 31, 2014
- Japan Science and Technology Agency
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Application
Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES...
- Publication number 20120256158
- Publication date Oct 11, 2012
- The Regents of the University of California
- Daniel F. Feezell
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-NITRIDE FLIP-CHIP SOLAR CELLS
- Publication number 20120180868
- Publication date Jul 19, 2012
- The Regents of the University of California
- Robert M. Farrell
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
TEXTURED III-V SEMICONDUCTOR
- Publication number 20120104411
- Publication date May 3, 2012
- The Regents of the University of California
- Michael Iza
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES...
- Publication number 20110216795
- Publication date Sep 8, 2011
- The Regents of the University of California
- Po Shan Hsu
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMIPOLAR III-NITRIDE LASER DIODES WITH ETCHED MIRRORS
- Publication number 20110170569
- Publication date Jul 14, 2011
- The Regents of the University of California
- Anurag Tyagi
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga,Al,In,B...
- Publication number 20110044364
- Publication date Feb 24, 2011
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Application
OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (G...
- Publication number 20110032965
- Publication date Feb 10, 2011
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,I...
- Publication number 20110007766
- Publication date Jan 13, 2011
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF IMPROVING SURFACE MORPHOLOGY OF (GA,AL,IN,B)N THIN FILMS...
- Publication number 20100219416
- Publication date Sep 2, 2010
- The Regents of the University of California
- Robert M. Farrell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (G...
- Publication number 20080198881
- Publication date Aug 21, 2008
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Application
Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES...
- Publication number 20080191192
- Publication date Aug 14, 2008
- The Regents of the University of California
- Daniel F. Feezell
- B82 - NANO-TECHNOLOGY
Information Patent Application
Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser
- Publication number 20070280320
- Publication date Dec 6, 2007
- Daniel F. Feezell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N...
- Publication number 20070093073
- Publication date Apr 26, 2007
- Robert M. Farrell
- C30 - CRYSTAL GROWTH

Robert M. Farrell JR.

Person

Patents Grantslast 30 patents

Semi-polar III-nitride optoelectronic devices on m-plane substrates...

III-nitride light emitting diodes with tunnel junctions wafer bonde...

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...

Monolithic integration of optically pumped III-nitride devices

Semi-polar III-nitride optoelectronic devices on M-plane substrates...

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...

High power blue-violet III-nitride semipolar laser diodes

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...

Semi-polar III-nitride optoelectronic devices on M-plane substrates...

Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes...

Method of improving surface morphology of (Ga,Al,In,B)N thin films...

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...

Optimization of laser bar orientation for nonpolar and semipolar (G...

Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes...

Optimization of laser bar orientation for nonpolar and semipolar (G...

Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser

Patents Applicationslast 30 patents

CONTACT ARCHITECTURES FOR TUNNEL JUNCTION DEVICES

III-NITRIDE LIGHT EMITTING DIODES WITH TUNNEL JUNCTIONS WAFER BONDE...

SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES...

TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...

MONOLITHIC INTEGRATION OF OPTICALLY PUMPED III-NITRIDE DEVICES

TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...

HIGH POWER BLUE-VIOLET III-NITRIDE SEMIPOLAR LASER DIODES

SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES...

METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga,Al,In,B)N THIN FILMS...

TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...

Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES...

III-NITRIDE FLIP-CHIP SOLAR CELLS

TEXTURED III-V SEMICONDUCTOR

SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES...

SEMIPOLAR III-NITRIDE LASER DIODES WITH ETCHED MIRRORS

STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga,Al,In,B...

OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (G...

STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,I...

METHOD OF IMPROVING SURFACE MORPHOLOGY OF (GA,AL,IN,B)N THIN FILMS...

OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (G...

Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES...

Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser

Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N...