Robert Mulfinger

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Adjusting configuration of a multiple gate transistor by controllin...
- Patent number 9,035,306
- Issue date May 19, 2015
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting configuration of a multiple gate transistor by controllin...
- Patent number 8,450,124
- Issue date May 28, 2013
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded Si/Ge material having enhanced across-subs...
- Patent number 8,334,569
- Issue date Dec 18, 2012
- Advanced Micro Devices, Inc.
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded SI/GE material having enhanced across-subs...
- Patent number 8,183,100
- Issue date May 22, 2012
- Advanced Micro Devices, Inc.
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple gate transistor having fins with a length defined by the g...
- Patent number 8,183,101
- Issue date May 22, 2012
- Advanced Micro Devices, Inc.
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device comprising an asymmetric embedded semiconductor a...
- Patent number 8,138,050
- Issue date Mar 20, 2012
- GLOBALFOUNDRIES Inc.
- Vassilios Papageorgiou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming double gate and tri-gate transistors on a bulk s...
- Patent number 8,114,746
- Issue date Feb 14, 2012
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ADJUSTING CONFIGURATION OF A MULTIPLE GATE TRANSISTOR BY CONTROLLIN...
- Publication number 20130306967
- Publication date Nov 21, 2013
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED ACROSS-SUBS...
- Publication number 20120211810
- Publication date Aug 23, 2012
- Advanced Micro Devices, Inc.
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING CONFIGURATION OF A MULTIPLE GATE TRANSISTOR BY CONTROLLIN...
- Publication number 20100164530
- Publication date Jul 1, 2010
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE GATE TRANSISTOR HAVING FINS WITH A LENGTH DEFINED BY THE G...
- Publication number 20100133615
- Publication date Jun 3, 2010
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K ETCH STOP LAYER OF REDUCED THICKNESS FOR PATTERNING A DIELEC...
- Publication number 20100090321
- Publication date Apr 15, 2010
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICE COMPRISING NMOS TRANSISTORS AND PMOS TRANSISTORS HAVING...
- Publication number 20100078735
- Publication date Apr 1, 2010
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE COMPRISING AN ASYMMETRIC EMBEDDED SEMICONDUCTOR A...
- Publication number 20100081244
- Publication date Apr 1, 2010
- Vassilios Papageorgiou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED ACROSS-SUBS...
- Publication number 20100078691
- Publication date Apr 1, 2010
- Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE AND TRI-GATE TRANSISTOR FORMED ON A BULK SUBSTRATE AND...
- Publication number 20090321836
- Publication date Dec 31, 2009
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS

Robert Mulfinger

Person

Patents Grantslast 30 patents

Adjusting configuration of a multiple gate transistor by controllin...

Adjusting configuration of a multiple gate transistor by controllin...

Transistor with embedded Si/Ge material having enhanced across-subs...

Transistor with embedded SI/GE material having enhanced across-subs...

Multiple gate transistor having fins with a length defined by the g...

Transistor device comprising an asymmetric embedded semiconductor a...

Method for forming double gate and tri-gate transistors on a bulk s...

Patents Applicationslast 30 patents

ADJUSTING CONFIGURATION OF A MULTIPLE GATE TRANSISTOR BY CONTROLLIN...

TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED ACROSS-SUBS...

ADJUSTING CONFIGURATION OF A MULTIPLE GATE TRANSISTOR BY CONTROLLIN...

MULTIPLE GATE TRANSISTOR HAVING FINS WITH A LENGTH DEFINED BY THE G...

HIGH-K ETCH STOP LAYER OF REDUCED THICKNESS FOR PATTERNING A DIELEC...

CMOS DEVICE COMPRISING NMOS TRANSISTORS AND PMOS TRANSISTORS HAVING...

TRANSISTOR DEVICE COMPRISING AN ASYMMETRIC EMBEDDED SEMICONDUCTOR A...

TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED ACROSS-SUBS...

DOUBLE GATE AND TRI-GATE TRANSISTOR FORMED ON A BULK SUBSTRATE AND...