Robert P. Vaudo

Person

New Milford, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Thin film thermoelectric devices having favorable crystal tilt
- Patent number 9,190,592
- Issue date Nov 17, 2015
- Nextreme Thermal Solutions, Inc.
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low dislocation density III-V nitride substrate including filled pi...
- Patent number 8,728,236
- Issue date May 20, 2014
- Cree, Inc.
- Xueping Xu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
High voltage switching devices and process for forming same
- Patent number 8,698,286
- Issue date Apr 15, 2014
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Grant
High voltage switching devices and process for forming same
- Patent number 8,390,101
- Issue date Mar 5, 2013
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Orientation of electronic devices on mis-cut substrates
- Patent number 8,378,463
- Issue date Feb 19, 2013
- Cree, Inc.
- George R. Brandes
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
III-V nitride homoepitaxial material of improved quality formed on...
- Patent number 8,212,259
- Issue date Jul 3, 2012
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Grant
High voltage switching devices and process for forming same
- Patent number 8,174,089
- Issue date May 8, 2012
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vicinal gallium nitride substrate for high quality homoepitaxy
- Patent number 8,043,731
- Issue date Oct 25, 2011
- Cree, Inc.
- Xueping Xu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Large area, uniformly low dislocation density GaN substrate and pro...
- Patent number 7,972,711
- Issue date Jul 5, 2011
- Cree, Inc.
- Xueping Xu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
III-V nitride substrate boule and method of making and using the same
- Patent number 7,915,152
- Issue date Mar 29, 2011
- Cree, Inc.
- Robert P. Vaudo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laser diode orientation on mis-cut substrates
- Patent number 7,884,447
- Issue date Feb 8, 2011
- Cree, Inc.
- George R. Brandes
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Large area, uniformly low dislocation density GaN substrate and pro...
- Patent number 7,879,147
- Issue date Feb 1, 2011
- Cree, Inc.
- Xueping Xu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of depositing epitaxial thermoelectric films having reduced...
- Patent number 7,804,019
- Issue date Sep 28, 2010
- Nextreme Thermal Solutions, Inc.
- Jonathan Pierce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switching devices and process for forming same
- Patent number 7,795,707
- Issue date Sep 14, 2010
- Cree, Inc.
- Jeffrey S. Flynn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk single crystal gallium nitride and method of making same
- Patent number 7,794,542
- Issue date Sep 14, 2010
- Cree, Inc.
- Michael A. Tischler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vicinal gallium nitride substrate for high quality homoepitaxy
- Patent number 7,700,203
- Issue date Apr 20, 2010
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V nitride substrate boule and method of making and using the same
- Patent number 7,655,197
- Issue date Feb 2, 2010
- Cree, Inc.
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vicinal gallium nitride substrate for high quality homoepitaxy
- Patent number 7,390,581
- Issue date Jun 24, 2008
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk single crystal gallium nitride and method of making same
- Patent number 7,332,031
- Issue date Feb 19, 2008
- Cree, Inc.
- Michael A. Tischler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large area, uniformly low dislocation density GaN substrate and pro...
- Patent number 7,323,256
- Issue date Jan 29, 2008
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-insulating GaN and method of making the same
- Patent number 7,170,095
- Issue date Jan 30, 2007
- Cree. Inc.
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vicinal gallium nitride substrate for high quality homoepitaxy
- Patent number 7,118,813
- Issue date Oct 10, 2006
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk single crystal gallium nitride and method of making same
- Patent number 6,972,051
- Issue date Dec 6, 2005
- Cree, Inc.
- Michael A. Tischler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Free-standing (Al, Ga, In)N and parting method for forming same
- Patent number 6,958,093
- Issue date Oct 25, 2005
- Cree, Inc.
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High surface quality GaN wafer and method of fabricating same
- Patent number 6,951,695
- Issue date Oct 4, 2005
- Cree, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density (Ga, A1, In) N and HVPE process for making same
- Patent number 6,943,095
- Issue date Sep 13, 2005
- Cree, Inc.
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk single crystal gallium nitride and method of making same
- Patent number 6,765,240
- Issue date Jul 20, 2004
- Cree, Inc.
- Michael A. Tischler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V nitride substrate boule and method of making and using the same
- Patent number 6,596,079
- Issue date Jul 22, 2003
- Advanced Technology Materials, Inc.
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based devices using thick (Ga, Al, In)N base layers
- Patent number 6,533,874
- Issue date Mar 18, 2003
- Advanced Technology Materials, Inc.
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High surface quality GaN wafer and method of fabricating same
- Patent number 6,488,767
- Issue date Dec 3, 2002
- Advanced Technology Materials, Inc.
- Xueping Xu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THIN FILM THERMOELECTRIC DEVICES HAVING FAVORABLE CRYSTAL TILT
- Publication number 20140124010
- Publication date May 8, 2014
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME
- Publication number 20130193444
- Publication date Aug 1, 2013
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME
- Publication number 20120181547
- Publication date Jul 19, 2012
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PRO...
- Publication number 20110140122
- Publication date Jun 16, 2011
- Cree, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
ORIENTATION OF ELECTRONIC DEVICES ON MIS-CUT SUBSTRATES
- Publication number 20110089536
- Publication date Apr 21, 2011
- Cree, Inc.
- George R. Brandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME
- Publication number 20100301351
- Publication date Dec 2, 2010
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME
- Publication number 20100289122
- Publication date Nov 18, 2010
- Cree, Inc.
- Robert P. Vaudo
- C30 - CRYSTAL GROWTH
Information Patent Application
VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
- Publication number 20100148320
- Publication date Jun 17, 2010
- Cree, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF FORMING THERMOELECTRIC DEVICES INCLUDING EPITAXIAL THERM...
- Publication number 20090199887
- Publication date Aug 13, 2009
- North Carolina State University and Nextreme Thermal Solutions, Inc.
- Mark Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laser Diode Orientation on Mis-Cut Substrates
- Publication number 20080265379
- Publication date Oct 30, 2008
- Cree, Inc.
- George R. Brandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
- Publication number 20080199649
- Publication date Aug 21, 2008
- Cree, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF DEPOSITING EPITAXIAL THERMOELECTRIC FILMS HAVING REDUCED...
- Publication number 20080185030
- Publication date Aug 7, 2008
- Nextreme Thermal Solutions, Inc.
- Jonathan Pierce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME
- Publication number 20080127884
- Publication date Jun 5, 2008
- Cree, Inc.
- Michael A. Tischler
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PRO...
- Publication number 20080124510
- Publication date May 29, 2008
- Cree, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PRO...
- Publication number 20080003786
- Publication date Jan 3, 2008
- Cree, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
High electron mobility electronic device structures comprising nati...
- Publication number 20070018198
- Publication date Jan 25, 2007
- George R. Brandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vicinal gallium nitride substrate for high quality homoepitaxy
- Publication number 20060228584
- Publication date Oct 12, 2006
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk single crystal gallium nitride and method of making same
- Publication number 20060032432
- Publication date Feb 16, 2006
- Michael A. Tischler
- C30 - CRYSTAL GROWTH
Information Patent Application
High surface quality GaN wafer and method of fabricating same
- Publication number 20060029832
- Publication date Feb 9, 2006
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
High voltage switching devices and process for forming same
- Publication number 20050167697
- Publication date Aug 4, 2005
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Application
Vicinal gallium nitride substrate for high quality homoepitaxy
- Publication number 20050104162
- Publication date May 19, 2005
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Large area, uniformly low dislocation density GaN substrate and pro...
- Publication number 20050103257
- Publication date May 19, 2005
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Semi-insulating GaN and method of making the same
- Publication number 20050009310
- Publication date Jan 13, 2005
- Robert P. Vaudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V Nitride homoepitaxial material of improved MOVPE epitaxial qu...
- Publication number 20030213964
- Publication date Nov 20, 2003
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V nitride substrate boule and method of making and using the same
- Publication number 20030157376
- Publication date Aug 21, 2003
- Robert P. Vaudo
- C30 - CRYSTAL GROWTH
Information Patent Application
High surface quality GaN wafer and method of fabricating same
- Publication number 20030127041
- Publication date Jul 10, 2003
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH SURFACE QUALITY GAN WAFER AND METHOD OF FABRICATING SAME
- Publication number 20020185054
- Publication date Dec 12, 2002
- Advanced Technology Materials Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density (Ga, Al, In) N and HVPE process for making same
- Publication number 20020166502
- Publication date Nov 14, 2002
- Robert P. Vaudo
- B82 - NANO-TECHNOLOGY
Information Patent Application
Free-standing (Al, Ga, In)N and parting method for forming same
- Publication number 20020068201
- Publication date Jun 6, 2002
- Robert P. Vaudo
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk single crystal gallium nitride and method of making same
- Publication number 20020028314
- Publication date Mar 7, 2002
- Michael A. Tischler
- B82 - NANO-TECHNOLOGY

Robert P. Vaudo

Person

Patents Grantslast 30 patents

Thin film thermoelectric devices having favorable crystal tilt

Low dislocation density III-V nitride substrate including filled pi...

High voltage switching devices and process for forming same

High voltage switching devices and process for forming same

Orientation of electronic devices on mis-cut substrates

III-V nitride homoepitaxial material of improved quality formed on...

High voltage switching devices and process for forming same

Vicinal gallium nitride substrate for high quality homoepitaxy

Large area, uniformly low dislocation density GaN substrate and pro...

III-V nitride substrate boule and method of making and using the same

Laser diode orientation on mis-cut substrates

Large area, uniformly low dislocation density GaN substrate and pro...

Methods of depositing epitaxial thermoelectric films having reduced...

High voltage switching devices and process for forming same

Bulk single crystal gallium nitride and method of making same

Vicinal gallium nitride substrate for high quality homoepitaxy

III-V nitride substrate boule and method of making and using the same

Vicinal gallium nitride substrate for high quality homoepitaxy

Bulk single crystal gallium nitride and method of making same

Large area, uniformly low dislocation density GaN substrate and pro...

Semi-insulating GaN and method of making the same

Vicinal gallium nitride substrate for high quality homoepitaxy

Bulk single crystal gallium nitride and method of making same

Free-standing (Al, Ga, In)N and parting method for forming same

High surface quality GaN wafer and method of fabricating same

Low defect density (Ga, A1, In) N and HVPE process for making same

Bulk single crystal gallium nitride and method of making same

III-V nitride substrate boule and method of making and using the same

GaN-based devices using thick (Ga, Al, In)N base layers

High surface quality GaN wafer and method of fabricating same

Patents Applicationslast 30 patents

THIN FILM THERMOELECTRIC DEVICES HAVING FAVORABLE CRYSTAL TILT

HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME

HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME

LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PRO...

ORIENTATION OF ELECTRONIC DEVICES ON MIS-CUT SUBSTRATES

HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME

III-V NITRIDE SUBSTRATE BOULE AND METHOD OF MAKING AND USING THE SAME

VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY

METHODS OF FORMING THERMOELECTRIC DEVICES INCLUDING EPITAXIAL THERM...

Laser Diode Orientation on Mis-Cut Substrates

VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY

METHODS OF DEPOSITING EPITAXIAL THERMOELECTRIC FILMS HAVING REDUCED...

BULK SINGLE CRYSTAL GALLIUM NITRIDE AND METHOD OF MAKING SAME

LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PRO...

LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PRO...

High electron mobility electronic device structures comprising nati...

Vicinal gallium nitride substrate for high quality homoepitaxy

Bulk single crystal gallium nitride and method of making same

High surface quality GaN wafer and method of fabricating same

High voltage switching devices and process for forming same

Vicinal gallium nitride substrate for high quality homoepitaxy

Large area, uniformly low dislocation density GaN substrate and pro...

Semi-insulating GaN and method of making the same

III-V Nitride homoepitaxial material of improved MOVPE epitaxial qu...

III-V nitride substrate boule and method of making and using the same

High surface quality GaN wafer and method of fabricating same

HIGH SURFACE QUALITY GAN WAFER AND METHOD OF FABRICATING SAME

Low defect density (Ga, Al, In) N and HVPE process for making same

Free-standing (Al, Ga, In)N and parting method for forming same

Bulk single crystal gallium nitride and method of making same