Robert R. Robison

Person

Colchester, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate-all-around field effect transistor having multiple threshold v...
- Patent number 12,015,069
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Ruqiang Bao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Top via interconnect having a line with a reduced bottom dimension
- Patent number 11,990,410
- Issue date May 21, 2024
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnects having spacers for improved top via critical dimensio...
- Patent number 11,961,759
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top via with damascene line and via
- Patent number 11,894,265
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top via process with damascene metal
- Patent number 11,869,808
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,869,937
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,869,936
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully aligned top vias
- Patent number 11,854,884
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top via with next level line selective growth
- Patent number 11,823,998
- Issue date Nov 21, 2023
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top via cut fill process for line extension reduction
- Patent number 11,804,406
- Issue date Oct 31, 2023
- International Business Machines Corporation
- Christopher J. Penny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive lines with subtractive cuts
- Patent number 11,791,258
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain contact cut last process to enable wrap-around-con...
- Patent number 11,757,012
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio vias for integrated circuits
- Patent number 11,682,617
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped top via for via resistance reduction
- Patent number 11,670,542
- Issue date Jun 6, 2023
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier-less prefilled via formation
- Patent number 11,621,189
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top via stack
- Patent number 11,600,565
- Issue date Mar 7, 2023
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Line cut patterning using sacrificial material
- Patent number 11,527,434
- Issue date Dec 13, 2022
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-mask alternating line deposition
- Patent number 11,437,317
- Issue date Sep 6, 2022
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier removal for conductor in top via integration scheme
- Patent number 11,430,735
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Topological qubit device
- Patent number 11,380,836
- Issue date Jul 5, 2022
- International Business Machines Corporation
- Steven J. Holmes
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanosheet field effect transistors with partial inside spacers
- Patent number 11,342,446
- Issue date May 24, 2022
- Tessera, Inc.
- Michael A. Guillorn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive random-access memory device including magnetic tun...
- Patent number 11,335,850
- Issue date May 17, 2022
- International Business Machines Corporation
- Karthik Yogendra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subtractive line with damascene second line type
- Patent number 11,302,575
- Issue date Apr 12, 2022
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnects having spacers for improved top via critical dimensio...
- Patent number 11,295,978
- Issue date Apr 5, 2022
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top vias with selectively retained etch stops
- Patent number 11,289,371
- Issue date Mar 29, 2022
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top via on subtractively etched conductive line
- Patent number 11,276,611
- Issue date Mar 15, 2022
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive lines with subtractive cuts
- Patent number 11,276,639
- Issue date Mar 15, 2022
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor having multiple threshold v...
- Patent number 11,245,020
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Ruqiang Bao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,239,316
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepped top via for via resistance reduction
- Patent number 11,232,977
- Issue date Jan 25, 2022
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PRODUCING STRESS IN NANOSHEET TRANSISTOR CHANNELS
- Publication number 20240213325
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL DIELECTRIC CAP FOR SUBTRACTIVE VIAS
- Publication number 20230207387
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE MATERIAL PHASE CHANGE MEMORY CELL
- Publication number 20230210026
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL
- Publication number 20230178621
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED MATERIAL WITHIN GATE CUT REGION
- Publication number 20230139399
- Publication date May 4, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP VIA PROCESS WITH DAMASCENE METAL
- Publication number 20230094757
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOOPED LONG CHANNEL FIELD-EFFECT TRANSISTOR
- Publication number 20230101235
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED C-SHAPED VERTICAL FIELD EFFECT TRANSISTOR
- Publication number 20230067119
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20230063973
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP VIA CUT FILL PROCESS FOR LINE EXTENSION REDUCTION
- Publication number 20230024306
- Publication date Jan 26, 2023
- International Business Machines Corporation
- Christopher J. Penny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-MASK ALTERNATING LINE DEPOSITION
- Publication number 20220359394
- Publication date Nov 10, 2022
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD EFFECT TRANSISTORS WITH PARTIAL INSIDE SPACERS
- Publication number 20220320316
- Publication date Oct 6, 2022
- TESSERA LLC
- Michael A. Guillorn
- B82 - NANO-TECHNOLOGY
Information Patent Application
TOP VIA ON SUBTRACTIVELY ETCHED CONDUCTIVE LINE
- Publication number 20220223473
- Publication date Jul 14, 2022
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO VIAS FOR INTEGRATED CIRCUITS
- Publication number 20220199521
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE LINES WITH SUBTRACTIVE CUTS
- Publication number 20220181255
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECTS HAVING SPACERS FOR IMPROVED TOP VIA CRITICAL DIMENSIO...
- Publication number 20220157652
- Publication date May 19, 2022
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20220140074
- Publication date May 5, 2022
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEPPED TOP VIA FOR VIA RESISTANCE REDUCTION
- Publication number 20220130718
- Publication date Apr 28, 2022
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY ALIGNED TOP VIAS
- Publication number 20220108922
- Publication date Apr 7, 2022
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Subtractive Line with Damascene Second Line Type
- Publication number 20220037205
- Publication date Feb 3, 2022
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP VIA INTERCONNECT HAVING A LINE WITH A REDUCED BOTTOM DIMENSION
- Publication number 20220028785
- Publication date Jan 27, 2022
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP VIA STACK
- Publication number 20220028783
- Publication date Jan 27, 2022
- International Business Machines Corporation
- Brent Alan Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP VIA WITH NEXT LEVEL LINE SELECTIVE GROWTH
- Publication number 20220005761
- Publication date Jan 6, 2022
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP VIA WITH DAMASCENE LINE AND VIA
- Publication number 20220005732
- Publication date Jan 6, 2022
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER REMOVAL FOR CAPACITANCE REDUCTION IN DAMASCENE TOP...
- Publication number 20220005731
- Publication date Jan 6, 2022
- International Business Machines Corporation
- Christopher J. Penny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WELL-CONTROLLED EDGE-TO-EDGE SPACING BETWEEN ADJACENT INTERCONNECTS
- Publication number 20210384123
- Publication date Dec 9, 2021
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20210376078
- Publication date Dec 2, 2021
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECTS HAVING SPACERS FOR IMPROVED TOP VIA CRITICAL DIMENSIO...
- Publication number 20210343585
- Publication date Nov 4, 2021
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER-LESS PREFILLED VIA FORMATION
- Publication number 20210343589
- Publication date Nov 4, 2021
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP VIA INTERCONNECT HAVING A LINE WITH A REDUCED BOTTOM DIMENSION
- Publication number 20210343643
- Publication date Nov 4, 2021
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS

Robert R. Robison

Person

Patents Grantslast 30 patents

Gate-all-around field effect transistor having multiple threshold v...

Top via interconnect having a line with a reduced bottom dimension

Interconnects having spacers for improved top via critical dimensio...

Top via with damascene line and via

Top via process with damascene metal

Semiconductor device and method of forming the semiconductor device

Semiconductor device and method of forming the semiconductor device

Fully aligned top vias

Top via with next level line selective growth

Top via cut fill process for line extension reduction

Conductive lines with subtractive cuts

Source and drain contact cut last process to enable wrap-around-con...

High aspect ratio vias for integrated circuits

Stepped top via for via resistance reduction

Barrier-less prefilled via formation

Top via stack

Line cut patterning using sacrificial material

Single-mask alternating line deposition

Barrier removal for conductor in top via integration scheme

Topological qubit device

Nanosheet field effect transistors with partial inside spacers

Magnetoresistive random-access memory device including magnetic tun...

Subtractive line with damascene second line type

Interconnects having spacers for improved top via critical dimensio...

Top vias with selectively retained etch stops

Top via on subtractively etched conductive line

Conductive lines with subtractive cuts

Gate-all-around field effect transistor having multiple threshold v...

Semiconductor device and method of forming the semiconductor device

Stepped top via for via resistance reduction

Patents Applicationslast 30 patents

PRODUCING STRESS IN NANOSHEET TRANSISTOR CHANNELS

CONFORMAL DIELECTRIC CAP FOR SUBTRACTIVE VIAS

COMPOSITE MATERIAL PHASE CHANGE MEMORY CELL

WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL

STRESSED MATERIAL WITHIN GATE CUT REGION

TOP VIA PROCESS WITH DAMASCENE METAL

LOOPED LONG CHANNEL FIELD-EFFECT TRANSISTOR

SELF-ALIGNED C-SHAPED VERTICAL FIELD EFFECT TRANSISTOR

FET WITH REDUCED PARASITIC CAPACITANCE

TOP VIA CUT FILL PROCESS FOR LINE EXTENSION REDUCTION

SINGLE-MASK ALTERNATING LINE DEPOSITION

NANOSHEET FIELD EFFECT TRANSISTORS WITH PARTIAL INSIDE SPACERS

TOP VIA ON SUBTRACTIVELY ETCHED CONDUCTIVE LINE

HIGH ASPECT RATIO VIAS FOR INTEGRATED CIRCUITS

CONDUCTIVE LINES WITH SUBTRACTIVE CUTS

INTERCONNECTS HAVING SPACERS FOR IMPROVED TOP VIA CRITICAL DIMENSIO...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

STEPPED TOP VIA FOR VIA RESISTANCE REDUCTION

FULLY ALIGNED TOP VIAS

Subtractive Line with Damascene Second Line Type

TOP VIA INTERCONNECT HAVING A LINE WITH A REDUCED BOTTOM DIMENSION

TOP VIA STACK

TOP VIA WITH NEXT LEVEL LINE SELECTIVE GROWTH

TOP VIA WITH DAMASCENE LINE AND VIA

ETCH STOP LAYER REMOVAL FOR CAPACITANCE REDUCTION IN DAMASCENE TOP...

WELL-CONTROLLED EDGE-TO-EDGE SPACING BETWEEN ADJACENT INTERCONNECTS

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

INTERCONNECTS HAVING SPACERS FOR IMPROVED TOP VIA CRITICAL DIMENSIO...

BARRIER-LESS PREFILLED VIA FORMATION

TOP VIA INTERCONNECT HAVING A LINE WITH A REDUCED BOTTOM DIMENSION