Robert S. Chau

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number RE50222
- Issue date Nov 26, 2024
- Sony Group Corporation
- Willy Rachmady
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 11,978,799
- Issue date May 7, 2024
- Tahoe Research, LTD.
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization structures for stacked device connectivity and their...
- Patent number 11,869,894
- Issue date Jan 9, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-N transistors for system on chip (SOC) architecture integ...
- Patent number 11,532,601
- Issue date Dec 20, 2022
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization structures for stacked device connectivity and their...
- Patent number 11,430,814
- Issue date Aug 30, 2022
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GaN) transistor structures on a substrate
- Patent number 11,195,944
- Issue date Dec 7, 2021
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N epitaxial device structures on free standing silicon mesas
- Patent number 11,177,376
- Issue date Nov 16, 2021
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 10,937,907
- Issue date Mar 2, 2021
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wurtzite heteroepitaxial structures with inclined sidewall facets f...
- Patent number 10,930,500
- Issue date Feb 23, 2021
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cells and precursors thereof, methods of making th...
- Patent number 10,897,009
- Issue date Jan 19, 2021
- Intel Corporation
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-N MEMS structures on a group IV substrate
- Patent number 10,850,977
- Issue date Dec 1, 2020
- Intel Corporation
- Han Wui Then
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Low stray field magnetic memory
- Patent number 10,832,847
- Issue date Nov 10, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic memory with symmetric fixed layers
- Patent number 10,832,749
- Issue date Nov 10, 2020
- Intel Corporation
- Charles C. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS implementation of germanium and III-V nanowires and nanoribbon...
- Patent number 10,784,170
- Issue date Sep 22, 2020
- Intel Corporation
- Marko Radosavljevic
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-layer silicon/gallium nitride semiconductor
- Patent number 10,763,248
- Issue date Sep 1, 2020
- Intel Corporation
- Sansaptak W. Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel gallium nitride transistors
- Patent number 10,756,183
- Issue date Aug 25, 2020
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fermi-level unpinning structures for semiconductive devices, proces...
- Patent number 10,756,198
- Issue date Aug 25, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming spin-transfer torque memory having a dot-con...
- Patent number 10,707,409
- Issue date Jul 7, 2020
- Intel Corporation
- Charles C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
GaN devices on engineered silicon substrates
- Patent number 10,692,839
- Issue date Jun 23, 2020
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with raised doped crystalline structures
- Patent number 10,665,708
- Issue date May 26, 2020
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap transistors on non-native semiconductor substrates
- Patent number 10,580,895
- Issue date Mar 3, 2020
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-transfer torque memory (STTM) devices having magnetic contacts
- Patent number 10,580,973
- Issue date Mar 3, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxially grown III-V materials based devices
- Patent number 10,573,717
- Issue date Feb 25, 2020
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS circuits using n-channel and p-channel gallium nitride transis...
- Patent number 10,573,647
- Issue date Feb 25, 2020
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-N nanowire transistors
- Patent number 10,541,305
- Issue date Jan 21, 2020
- Intel Corporation
- Han Wui Then
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular magnetic memory with reduced switching current
- Patent number 10,522,739
- Issue date Dec 31, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cells and precursors thereof, methods of making th...
- Patent number 10,516,109
- Issue date Dec 24, 2019
- Intel Corporation
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of III-V devices on Si wafers
- Patent number 10,475,888
- Issue date Nov 12, 2019
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making a defect free fin based device in lateral epitaxy overgrowth...
- Patent number 10,475,706
- Issue date Nov 12, 2019
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION STRUCTURES FOR STACKED DEVICE CONNECTIVITY AND THEIR...
- Publication number 20220344376
- Publication date Oct 27, 2022
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20220102339
- Publication date Mar 31, 2022
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20220102344
- Publication date Mar 31, 2022
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL
- Publication number 20210135007
- Publication date May 6, 2021
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION STRUCTURES FOR STACKED DEVICE CONNECTIVITY AND THEIR...
- Publication number 20200395386
- Publication date Dec 17, 2020
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER SILICON/GALLIUM NITRIDE SEMICONDUCTOR
- Publication number 20200227396
- Publication date Jul 16, 2020
- Intel Corporation
- Sansaptak W. DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW STRAY FIELD MAGNETIC MEMORY
- Publication number 20200051724
- Publication date Feb 13, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC MEMORY WITH SYMMETRIC FIXED LAYERS
- Publication number 20200043536
- Publication date Feb 6, 2020
- Intel Corporation
- Charles C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL
- Publication number 20190371940
- Publication date Dec 5, 2019
- Intel Corporation
- Justin K. Brask
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
RESISTIVE MEMORY CELLS AND PRECURSORS THEREOF, METHODS OF MAKING TH...
- Publication number 20190348604
- Publication date Nov 14, 2019
- Intel Corporation
- NILOY MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WURTZITE HETEROEPITAXIAL STRUCTURES WITH INCLINED SIDEWALL FACETS F...
- Publication number 20190287789
- Publication date Sep 19, 2019
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-N TRANSISTORS FOR SYSTEM ON CHIP (SOC) ARCHITECTURE INTEG...
- Publication number 20190244936
- Publication date Aug 8, 2019
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS IMPLEMENTATION OF GERMANIUM AND III-V NANOWIRES AND NANORIBBON...
- Publication number 20190229022
- Publication date Jul 25, 2019
- Intel Corporation
- Marko RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N EPITAXIAL DEVICE STRUCTURES ON FREE STANDING SILICON MESAS
- Publication number 20190172938
- Publication date Jun 6, 2019
- Intel Corporation
- Sansaptak DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-N NANOWIRE TRANSISTORS
- Publication number 20190165106
- Publication date May 30, 2019
- Intel Corporation
- Han Wui THEN
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICES WITH RAISED DOPED CRYSTALLINE STRUCTURES
- Publication number 20190148533
- Publication date May 16, 2019
- Intel Corporation
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-TRANSFER TORQUE MEMORY (STTM) DEVICES HAVING MAGNETIC CONTACTS
- Publication number 20190109281
- Publication date Apr 11, 2019
- Intel Corporation
- BRIAN S. DOYLE
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES
- Publication number 20190088747
- Publication date Mar 21, 2019
- Intel Corporation
- Niti GOEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND DEVICES INTEGRATING III-N TRANSISTOR CIRCUITRY WITH SI...
- Publication number 20190006171
- Publication date Jan 3, 2019
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL GALLIUM NITRIDE TRANSISTORS
- Publication number 20180350911
- Publication date Dec 6, 2018
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP TRANSISTORS ON NON-NATIVE SEMICONDUCTOR SUBSTRATES AN...
- Publication number 20180331224
- Publication date Nov 15, 2018
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC MEMORY WITH FILAMENT CONDUCTION PATH
- Publication number 20180323367
- Publication date Nov 8, 2018
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DIE HAVING REDUCED DEFECT GROUP III-NITRIDE STRU...
- Publication number 20180315659
- Publication date Nov 1, 2018
- Intel Corporation
- Sansaptak DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC MEMORY WITH REDUCED SWITCHING CURRENT
- Publication number 20180301619
- Publication date Oct 18, 2018
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUNCTIONAL METAL OXIDE BASED MICROELECTRONIC DEVICES
- Publication number 20180226509
- Publication date Aug 9, 2018
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RARE EARTH METAL & METAL OXIDE ELECTRODE INTERFACING OF OXIDE MEMOR...
- Publication number 20180219154
- Publication date Aug 2, 2018
- INTEL CORPORATION
- PRASHANT MAJHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N EPITAXIAL DEVICE STRUCTURES ON FREE STANDING SILICON MESAS
- Publication number 20180219087
- Publication date Aug 2, 2018
- Intel Corporation
- Sansaptak DASGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A STACKABLE THIN FILM MEMORY
- Publication number 20180204842
- Publication date Jul 19, 2018
- Intel Corporation
- Elijah V. KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH RAISED DOPED CRYSTALLINE STRUCTURES
- Publication number 20180190807
- Publication date Jul 5, 2018
- Intel Corporation
- MARKO RADOSAVLJEVIC
- H01 - BASIC ELECTRIC ELEMENTS

Robert S. Chau

Person

Patents Grantslast 30 patents

Non-planar gate all-around device and method of fabrication thereof

Gallium nitride (GAN) three-dimensional integrated circuit technology

Method for fabricating transistor with thinned channel

Metallization structures for stacked device connectivity and their...

Group III-N transistors for system on chip (SOC) architecture integ...

Metallization structures for stacked device connectivity and their...

Gallium nitride (GaN) transistor structures on a substrate

III-N epitaxial device structures on free standing silicon mesas

Method for fabricating transistor with thinned channel

Wurtzite heteroepitaxial structures with inclined sidewall facets f...

Resistive memory cells and precursors thereof, methods of making th...

Group III-N MEMS structures on a group IV substrate

Low stray field magnetic memory

Perpendicular magnetic memory with symmetric fixed layers

CMOS implementation of germanium and III-V nanowires and nanoribbon...

Multi-layer silicon/gallium nitride semiconductor

N-channel gallium nitride transistors

Fermi-level unpinning structures for semiconductive devices, proces...

Techniques for forming spin-transfer torque memory having a dot-con...

GaN devices on engineered silicon substrates

Semiconductor devices with raised doped crystalline structures

Wide band gap transistors on non-native semiconductor substrates

Spin-transfer torque memory (STTM) devices having magnetic contacts

Selective epitaxially grown III-V materials based devices

CMOS circuits using n-channel and p-channel gallium nitride transis...

Group III-N nanowire transistors

Perpendicular magnetic memory with reduced switching current

Resistive memory cells and precursors thereof, methods of making th...

Integration of III-V devices on Si wafers

Making a defect free fin based device in lateral epitaxy overgrowth...

Patents Applicationslast 30 patents

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

METALLIZATION STRUCTURES FOR STACKED DEVICE CONNECTIVITY AND THEIR...

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL

METALLIZATION STRUCTURES FOR STACKED DEVICE CONNECTIVITY AND THEIR...

MULTI-LAYER SILICON/GALLIUM NITRIDE SEMICONDUCTOR

LOW STRAY FIELD MAGNETIC MEMORY

PERPENDICULAR MAGNETIC MEMORY WITH SYMMETRIC FIXED LAYERS

METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL

RESISTIVE MEMORY CELLS AND PRECURSORS THEREOF, METHODS OF MAKING TH...

WURTZITE HETEROEPITAXIAL STRUCTURES WITH INCLINED SIDEWALL FACETS F...

GROUP III-N TRANSISTORS FOR SYSTEM ON CHIP (SOC) ARCHITECTURE INTEG...

CMOS IMPLEMENTATION OF GERMANIUM AND III-V NANOWIRES AND NANORIBBON...

III-N EPITAXIAL DEVICE STRUCTURES ON FREE STANDING SILICON MESAS

GROUP III-N NANOWIRE TRANSISTORS

SEMICONDUCTOR DEVICES WITH RAISED DOPED CRYSTALLINE STRUCTURES

SPIN-TRANSFER TORQUE MEMORY (STTM) DEVICES HAVING MAGNETIC CONTACTS

SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES

METHODS AND DEVICES INTEGRATING III-N TRANSISTOR CIRCUITRY WITH SI...

N-CHANNEL GALLIUM NITRIDE TRANSISTORS

WIDE BAND GAP TRANSISTORS ON NON-NATIVE SEMICONDUCTOR SUBSTRATES AN...

PERPENDICULAR MAGNETIC MEMORY WITH FILAMENT CONDUCTION PATH

INTEGRATED CIRCUIT DIE HAVING REDUCED DEFECT GROUP III-NITRIDE STRU...

PERPENDICULAR MAGNETIC MEMORY WITH REDUCED SWITCHING CURRENT

FUNCTIONAL METAL OXIDE BASED MICROELECTRONIC DEVICES

RARE EARTH METAL & METAL OXIDE ELECTRODE INTERFACING OF OXIDE MEMOR...

III-N EPITAXIAL DEVICE STRUCTURES ON FREE STANDING SILICON MESAS

A STACKABLE THIN FILM MEMORY

SEMICONDUCTOR DEVICES WITH RAISED DOPED CRYSTALLINE STRUCTURES