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Robert W. Broadie
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Hopewell Junction, NY, US
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last 30 patents
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Patent Grant
Integrated circuit isolation structure and method for producing the...
Patent number
4,016,017
Issue date
Apr 5, 1977
International Business Machines Corporation
Joseph Adam Aboaf
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing high power semiconductor device using anodic t...
Patent number
4,006,045
Issue date
Feb 1, 1977
International Business Machines Corporation
Joseph A. Aboaf
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Two stage heteroepitaxial deposition process for GaP/Si
Patent number
3,963,538
Issue date
Jun 15, 1976
International Business Machines Corporation
Robert W. Broadie
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High power semiconductor device
Patent number
3,961,353
Issue date
Jun 1, 1976
International Business Machines Corporation
Joseph A. Aboaf
H01 - BASIC ELECTRIC ELEMENTS