Robert William Murto

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McKinney, TX, US

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing dual work function gate electrodes through...
- Patent number 7,338,865
- Issue date Mar 4, 2008
- Texas Instruments Incorporated
- Robert W. Murto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor gates with thin lower metal silicide and methods for...
- Patent number 7,045,456
- Issue date May 16, 2006
- Texas Instruments Incorporated
- Robert William Murto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implant source with multiple indirectly-heated electron sources
- Patent number 6,356,026
- Issue date Mar 12, 2002
- Texas Instruments Incorporated
- Robert W. Murto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CAPACITOR FORMED IN INTERLEVEL DIELECTRIC LAYER
- Publication number 20100032801
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Jarvis Benjamin Jacobs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual work function gate electrodes obtained through local thickness...
- Publication number 20060019437
- Publication date Jan 26, 2006
- Texas Instruments, Incorporated
- Robert W. Murto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS transistor gates with thin lower metal silicide and methods for...
- Publication number 20050136605
- Publication date Jun 23, 2005
- Robert William Murto
- H01 - BASIC ELECTRIC ELEMENTS