Robert Wong

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Two-color self-aligned double patterning (SADP) to yield static ran...
- Patent number 11,978,639
- Issue date May 7, 2024
- TESSERA LLC
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM design to facilitate single fin cut in double sidewall image t...
- Patent number RE49794
- Issue date Jan 9, 2024
- Adeia Semiconductor Solutions LLC
- Mary E. Weybright
Information Patent Grant
Two-color self-aligned double patterning (SADP) to yield static ran...
- Patent number 11,699,591
- Issue date Jul 11, 2023
- TESSERA LLC
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Testing SRAM structures
- Patent number 11,295,995
- Issue date Apr 5, 2022
- International Business Machines Corporation
- Robert Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-color self-aligned double patterning (SADP) to yield static ran...
- Patent number 11,062,911
- Issue date Jul 13, 2021
- Tessera, Inc.
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell with dynamic split ground and split wordline
- Patent number 10,910,041
- Issue date Feb 2, 2021
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
Buried contact to provide reduced VFET feature-to-feature tolerance...
- Patent number 10,804,148
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried contact to provide reduced VFET feature-to-feature tolerance...
- Patent number 10,796,957
- Issue date Oct 6, 2020
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell with dynamic split ground and split wordline
- Patent number 10,755,773
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
SRAM cell with dynamic split ground and split wordline
- Patent number 10,699,775
- Issue date Jun 30, 2020
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
SRAM cell with dynamic split ground and split wordline
- Patent number 10,629,258
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
Incorporation of process variation contours in design rule and risk...
- Patent number 10,621,295
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Jinning Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
4T static random access memory bitcell retention
- Patent number 10,614,877
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Albert Chu
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-color self-aligned double patterning (SADP) to yield static ran...
- Patent number 10,573,528
- Issue date Feb 25, 2020
- Tessera, Inc.
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra dense and stable 4T SRAM cell design having NFETs and PFETs
- Patent number 10,381,068
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Myung-Hee Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stable and reliable FinFET SRAM with improved beta ratio
- Patent number 10,366,996
- Issue date Jul 30, 2019
- GLOBALFOUNDRIES Inc.
- Robert C. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell with dynamic split ground and split wordline
- Patent number 10,366,746
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
SRAM cell with dynamic split ground and split wordline
- Patent number 10,347,327
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
SRAM design to facilitate single fin cut in double sidewall image t...
- Patent number 10,096,521
- Issue date Oct 9, 2018
- International Business Machines Corporation
- Mary E. Weybright
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit design layout optimizer based on process variati...
- Patent number 10,083,272
- Issue date Sep 25, 2018
- International Business Machines Corporation
- Lawrence A. Clevenger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
SRAM cell with dynamic split ground and split wordline
- Patent number 9,934,843
- Issue date Apr 3, 2018
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
SRAM cell with dynamic split ground and split wordline
- Patent number 9,881,668
- Issue date Jan 30, 2018
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
Stable and reliable FinFET SRAM with improved beta ratio
- Patent number 9,799,660
- Issue date Oct 24, 2017
- GLOBALFOUNDRIES Inc.
- Robert C. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell with dynamic split ground and split wordline
- Patent number 9,576,646
- Issue date Feb 21, 2017
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
SRAM design to facilitate single fin cut in double sidewall image t...
- Patent number 9,564,446
- Issue date Feb 7, 2017
- International Business Machines Corporation
- Mary E. Weybright
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with stacked non-planar field effect trans...
- Patent number 9,472,558
- Issue date Oct 18, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell with dynamic split ground and split wordline
- Patent number 9,293,192
- Issue date Mar 22, 2016
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-coupling of gate conductor line and active region in semicond...
- Patent number 9,263,457
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Viraj Y. Sardesai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
FinFET device
- Patent number 9,059,021
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Shahid A. Butt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-coupling of gate conductor line and active region in semicond...
- Patent number 8,853,700
- Issue date Oct 7, 2014
- International Business Machines Corporation
- Viraj Y. Sardesai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RAN...
- Publication number 20240258113
- Publication date Aug 1, 2024
- Adeia Semiconductor Solutions LLC
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RAN...
- Publication number 20240079247
- Publication date Mar 7, 2024
- TESSERA LLC
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RAN...
- Publication number 20210343536
- Publication date Nov 4, 2021
- Tessera, Inc.
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TESTING SRAM STRUCTURES
- Publication number 20210082776
- Publication date Mar 18, 2021
- International Business Machines Corporation
- Robert Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RAN...
- Publication number 20200266072
- Publication date Aug 20, 2020
- Tessera, Inc.
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE
- Publication number 20200066334
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Application
INCORPORATION OF PROCESS VARIATION CONTOURS IN DESIGN RULE AND RISK...
- Publication number 20190311071
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Jinning Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE
- Publication number 20190304537
- Publication date Oct 3, 2019
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE
- Publication number 20190272869
- Publication date Sep 5, 2019
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Application
Ultra Dense and Stable 4T SRAM Cell Design Having Nfets And Pfets
- Publication number 20190189195
- Publication date Jun 20, 2019
- International Business Machines Corporation
- Myung-Hee Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RAN...
- Publication number 20190189457
- Publication date Jun 20, 2019
- International Business Machines Corporation
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED CONTACT TO PROVIDE REDUCED VFET FEATURE-TO-FEATURE TOLERANCE...
- Publication number 20190067101
- Publication date Feb 28, 2019
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED CONTACT TO PROVIDE REDUCED VFET FEATURE-TO-FEATURE TOLERANCE...
- Publication number 20190067100
- Publication date Feb 28, 2019
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE
- Publication number 20180158521
- Publication date Jun 7, 2018
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE
- Publication number 20180068716
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE
- Publication number 20180068718
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT DESIGN LAYOUT OPTIMIZER BASED ON PROCESS VARIATI...
- Publication number 20180046746
- Publication date Feb 15, 2018
- International Business Machines Corporation
- Lawrence A. Clevenger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STABLE AND RELIABLE FINFET SRAM WITH IMPROVED BETA RATIO
- Publication number 20180012895
- Publication date Jan 11, 2018
- Robert C. WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STABLE AND RELIABLE FINFET SRAM WITH IMPROVED BETA RATIO
- Publication number 20170330883
- Publication date Nov 16, 2017
- GLOBALFOUNDRIES INC.
- Robert C. WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM DESIGN TO FACILITATE SINGLE FIN CUT IN DOUBLE SIDEWALL IMAGE T...
- Publication number 20170178963
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Mary E. Weybright
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE
- Publication number 20170025169
- Publication date Jan 26, 2017
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE
- Publication number 20170025168
- Publication date Jan 26, 2017
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE
- Publication number 20160155493
- Publication date Jun 2, 2016
- International Business Machines Corporation
- Robert C. Wong
- G11 - INFORMATION STORAGE
Information Patent Application
TEST STRUCTURE AND METHOD OF TESTING A MICROCHIP
- Publication number 20150294738
- Publication date Oct 15, 2015
- International Business Machines Corporation
- Ishtiaq AHSAN
- G11 - INFORMATION STORAGE
Information Patent Application
FINFET DEVICE
- Publication number 20140175564
- Publication date Jun 26, 2014
- International Business Machines Corporation
- SHAHID A. BUTT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-COUPLING OF GATE CONDUCTOR LINE AND ACTIVE REGION IN SEMICOND...
- Publication number 20140113417
- Publication date Apr 24, 2014
- International Business Machines Corporation
- Viraj V. Sardesai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE
- Publication number 20130119481
- Publication date May 16, 2013
- International Business Machines Corporation
- SHAHID A. BUTT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-COUPLING OF GATE CONDUCTOR LINE AND ACTIVE REGION IN SEMICOND...
- Publication number 20130037864
- Publication date Feb 14, 2013
- International Business Machines Corporation
- Viraj Y. Sardesai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF FORMING A TRANSISTOR WITH ASYMMETRIC CHANNE...
- Publication number 20120235236
- Publication date Sep 20, 2012
- International Business Machines Corporation
- Haining S. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTORS HAVING REDUCED DISTANCES BETWEEN GATE ELE...
- Publication number 20120126339
- Publication date May 24, 2012
- International Business Machines Corporation
- Robert C. Wong
- H01 - BASIC ELECTRIC ELEMENTS

Robert Wong

Person

Patents Grantslast 30 patents

Two-color self-aligned double patterning (SADP) to yield static ran...

SRAM design to facilitate single fin cut in double sidewall image t...

Two-color self-aligned double patterning (SADP) to yield static ran...

Testing SRAM structures

Two-color self-aligned double patterning (SADP) to yield static ran...

SRAM cell with dynamic split ground and split wordline

Buried contact to provide reduced VFET feature-to-feature tolerance...

Buried contact to provide reduced VFET feature-to-feature tolerance...

SRAM cell with dynamic split ground and split wordline

SRAM cell with dynamic split ground and split wordline

SRAM cell with dynamic split ground and split wordline

Incorporation of process variation contours in design rule and risk...

4T static random access memory bitcell retention

Two-color self-aligned double patterning (SADP) to yield static ran...

Ultra dense and stable 4T SRAM cell design having NFETs and PFETs

Stable and reliable FinFET SRAM with improved beta ratio

SRAM cell with dynamic split ground and split wordline

SRAM cell with dynamic split ground and split wordline

SRAM design to facilitate single fin cut in double sidewall image t...

Integrated circuit design layout optimizer based on process variati...

SRAM cell with dynamic split ground and split wordline

SRAM cell with dynamic split ground and split wordline

Stable and reliable FinFET SRAM with improved beta ratio

SRAM cell with dynamic split ground and split wordline

SRAM design to facilitate single fin cut in double sidewall image t...

Semiconductor structures with stacked non-planar field effect trans...

SRAM cell with dynamic split ground and split wordline

Cross-coupling of gate conductor line and active region in semicond...

FinFET device

Cross-coupling of gate conductor line and active region in semicond...

Patents Applicationslast 30 patents

TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RAN...

TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RAN...

TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RAN...

TESTING SRAM STRUCTURES

TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RAN...

SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE

INCORPORATION OF PROCESS VARIATION CONTOURS IN DESIGN RULE AND RISK...

SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE

SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE

Ultra Dense and Stable 4T SRAM Cell Design Having Nfets And Pfets

TWO-COLOR SELF-ALIGNED DOUBLE PATTERNING (SADP) TO YIELD STATIC RAN...

BURIED CONTACT TO PROVIDE REDUCED VFET FEATURE-TO-FEATURE TOLERANCE...

BURIED CONTACT TO PROVIDE REDUCED VFET FEATURE-TO-FEATURE TOLERANCE...

SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE

SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE

SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE

INTEGRATED CIRCUIT DESIGN LAYOUT OPTIMIZER BASED ON PROCESS VARIATI...

STABLE AND RELIABLE FINFET SRAM WITH IMPROVED BETA RATIO

STABLE AND RELIABLE FINFET SRAM WITH IMPROVED BETA RATIO

SRAM DESIGN TO FACILITATE SINGLE FIN CUT IN DOUBLE SIDEWALL IMAGE T...

SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE

SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE

SRAM CELL WITH DYNAMIC SPLIT GROUND AND SPLIT WORDLINE

TEST STRUCTURE AND METHOD OF TESTING A MICROCHIP

FINFET DEVICE

CROSS-COUPLING OF GATE CONDUCTOR LINE AND ACTIVE REGION IN SEMICOND...

FINFET DEVICE

CROSS-COUPLING OF GATE CONDUCTOR LINE AND ACTIVE REGION IN SEMICOND...

STRUCTURE AND METHOD OF FORMING A TRANSISTOR WITH ASYMMETRIC CHANNE...

SEMICONDUCTOR TRANSISTORS HAVING REDUCED DISTANCES BETWEEN GATE ELE...