RODNEY S. RIDLEY

Person

MOUNTAINTOP, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trench-gate field effect transistor
- Patent number 8,884,365
- Issue date Nov 11, 2014
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded gate field effect transistors
- Patent number 8,803,207
- Issue date Aug 12, 2014
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction structures for power devices and methods of manufacture
- Patent number 8,772,868
- Issue date Jul 8, 2014
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming shielded gate power transistor utilizing chemical...
- Patent number 8,461,040
- Issue date Jun 11, 2013
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Structure and method for forming trench-gate field effect transisto...
- Patent number 8,441,069
- Issue date May 14, 2013
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming inter-poly dielectric (IPD) layers in power semi...
- Patent number 8,143,123
- Issue date Mar 27, 2012
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Method of forming trench-gate field effect transistors
- Patent number 8,043,913
- Issue date Oct 25, 2011
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming shielded gate field effect transistor using spacers
- Patent number 7,935,577
- Issue date May 3, 2011
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate field effect transistor with channel enhancement region...
- Patent number 7,923,776
- Issue date Apr 12, 2011
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate field effect transistors and methods of forming the same
- Patent number 7,504,303
- Issue date Mar 17, 2009
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming shielded gate field effect transistors
- Patent number 7,476,589
- Issue date Jan 13, 2009
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gated FET for power device with active gate trenches and gat...
- Patent number 7,449,354
- Issue date Nov 11, 2008
- Fairchild Semiconductor Corporation
- Bruce Douglas Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dense trench MOSFET with decreased etch sensitivity to deposition a...
- Patent number 7,436,021
- Issue date Oct 14, 2008
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench FET with improved body to gate alignment
- Patent number 7,416,948
- Issue date Aug 26, 2008
- Fairchild Semiconductor Corporation
- Nathan L. Kraft
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried gate-field termination structure
- Patent number 6,818,947
- Issue date Nov 16, 2004
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming MOS-gated power device having segmented trench...
- Patent number 6,673,681
- Issue date Jan 6, 2004
- Fairchild Semiconductor Corporation
- Christopher B. Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dense trench MOSFET with decreased etch sensitivity to deposition a...
- Patent number 6,635,535
- Issue date Oct 21, 2003
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-gated power device with doped polysilicon body and process for...
- Patent number 6,602,768
- Issue date Aug 5, 2003
- Fairchild Semiconductor Corporation
- Christopher B. Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with low gate charge
- Patent number 6,573,569
- Issue date Jun 3, 2003
- Fairchild Semiconductor Corporation
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for depositing and planarizing BPSG for dense trench MOSFET...
- Patent number 6,465,325
- Issue date Oct 15, 2002
- Fairchild Semiconductor Corporation
- Rodney S. Ridley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-gated power device having segmented trench and extended doping...
- Patent number 6,433,385
- Issue date Aug 13, 2002
- Fairchild Semiconductor Corporation
- Christopher B. Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified ozonator for a semiconductor wafer cleaner
- Patent number 6,399,022
- Issue date Jun 4, 2002
- Fairchild Semiconductor Corporation
- Malcolm R. Schuler
- B08 - CLEANING
Information Patent Grant
Potted transducer array with matching network in a multiple pass co...
- Patent number 6,367,493
- Issue date Apr 9, 2002
- Fairchild Semiconductor Corporation
- Malcolm R. Schuler
- B08 - CLEANING
Information Patent Grant
MOS-gated power device with doped polysilicon body and process for...
- Patent number 6,365,942
- Issue date Apr 2, 2002
- Fairchild Semiconductor Corporation
- Christopher B. Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Potted transducer array with matching network in a multiple pass co...
- Patent number 6,314,974
- Issue date Nov 13, 2001
- Fairchild Semiconductor Corporation
- Malcolm R. Schuler
- B08 - CLEANING
Information Patent Grant
Process for forming high voltage junction termination extension oxide
- Patent number 6,309,952
- Issue date Oct 30, 2001
- Fairchild Semiconductor Corporation
- Rodney S. Ridley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backmetal drain terminal with low stress and thermal resistance
- Patent number 6,211,550
- Issue date Apr 3, 2001
- Intersil Corporation
- Thomas Eugene Grebs
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE
- Publication number 20150069567
- Publication date Mar 12, 2015
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FORMING TRENCH-GATE FIELD EFFECT TRANSISTOR
- Publication number 20130248991
- Publication date Sep 26, 2013
- Fairchild Semiconductor Corporation
- Hamza YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction Structures for Power Devices and Methods of Manufacture
- Publication number 20120273875
- Publication date Nov 1, 2012
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...
- Publication number 20120220091
- Publication date Aug 30, 2012
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Trench-Gate Field Effect Transistors and Methods of Forming the Same
- Publication number 20120104490
- Publication date May 3, 2012
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Shielded Gate Power Transistor Utilizing Chemical...
- Publication number 20120058615
- Publication date Mar 8, 2012
- Bruce Douglas Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Shielded Gate Field Effect Transistors
- Publication number 20110212586
- Publication date Sep 1, 2011
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Trench-Gate Field Effect Transistors
- Publication number 20110177662
- Publication date Jul 21, 2011
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-GATE FIELD EFFECT TRANSISTOR WITH CHANNEL ENHANCEMENT REGION...
- Publication number 20100258862
- Publication date Oct 14, 2010
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-Gate Field Effect Transistors and Methods of Forming the Same
- Publication number 20090230465
- Publication date Sep 17, 2009
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Shielded Gate Field Effect Transistor Using Spacers
- Publication number 20090111231
- Publication date Apr 30, 2009
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Inter-poly Dielectric (IPD) Layers in Power Semi...
- Publication number 20080199997
- Publication date Aug 21, 2008
- Thomas E. Grebs
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Trenched Shield Gate Power Semiconductor Devices and Methods of Man...
- Publication number 20080150020
- Publication date Jun 26, 2008
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Power device utilizing chemical mechanical planarization
- Publication number 20070155104
- Publication date Jul 5, 2007
- Bruce Douglas Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench FET with Improved Body to Gate Alignment
- Publication number 20070082441
- Publication date Apr 12, 2007
- Nathan L. Kraft
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures and methods for forming shielded gate field effect trans...
- Publication number 20070032020
- Publication date Feb 8, 2007
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-gate field effect transistors and methods of forming the same
- Publication number 20060273386
- Publication date Dec 7, 2006
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor devices and methods of manufacture
- Publication number 20060214221
- Publication date Sep 28, 2006
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Power semiconductor devices and methods of manufacture
- Publication number 20060214222
- Publication date Sep 28, 2006
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Power semiconductor devices and methods of manufacture
- Publication number 20050167742
- Publication date Aug 4, 2005
- Fairchild Semiconductor Corp.
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Dense trench MOSFET with decreased etch sensitivity to deposition a...
- Publication number 20040104427
- Publication date Jun 3, 2004
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried gate-field termination structure
- Publication number 20040056302
- Publication date Mar 25, 2004
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dense trench MOSFET with decreased etch sensitivity to deposition a...
- Publication number 20030096482
- Publication date May 22, 2003
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET WITH LOW GATE CHARGE
- Publication number 20030085430
- Publication date May 8, 2003
- Jifa Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for forming MOS-gated power device having segmented trench...
- Publication number 20020175412
- Publication date Nov 28, 2002
- Christopher B. Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS-gated power device with doped polysilicon body and process for...
- Publication number 20020175383
- Publication date Nov 28, 2002
- Fairchild Semiconductor Corporation
- Christopher B. Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR DEPOSITING AND PLANARIZING BPSG FOR DENSE TRENCH MOSFET...
- Publication number 20020119639
- Publication date Aug 29, 2002
- Rodney S. Ridley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Potted transducer array with matching network in a multiple pass co...
- Publication number 20020038662
- Publication date Apr 4, 2002
- INTERSIL CORPORATION
- Malcolm R. Schuler
- C02 - TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
Information Patent Application
PROCESS FOR FORMING HIGH VOLTAGE JUNCTION TERMINATION EXTENSION OXIDE
- Publication number 20010041461
- Publication date Nov 15, 2001
- RODNEY S. RIDLEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Potted transducer array with matching network in a multiple pass co...
- Publication number 20010015211
- Publication date Aug 23, 2001
- INTERSIL CORPORATION
- Malcolm R. Schuler
- C02 - TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE

RODNEY S. RIDLEY

Person

Patents Grantslast 30 patents

Trench-gate field effect transistor

Shielded gate field effect transistors

Superjunction structures for power devices and methods of manufacture

Method of forming shielded gate power transistor utilizing chemical...

Structure and method for forming trench-gate field effect transisto...

Methods of forming inter-poly dielectric (IPD) layers in power semi...

Method of forming trench-gate field effect transistors

Method for forming shielded gate field effect transistor using spacers

Trench-gate field effect transistor with channel enhancement region...

Trench-gate field effect transistors and methods of forming the same

Methods for forming shielded gate field effect transistors

Trench-gated FET for power device with active gate trenches and gat...

Dense trench MOSFET with decreased etch sensitivity to deposition a...

Trench FET with improved body to gate alignment

Buried gate-field termination structure

Process for forming MOS-gated power device having segmented trench...

Dense trench MOSFET with decreased etch sensitivity to deposition a...

MOS-gated power device with doped polysilicon body and process for...

Trench MOSFET with low gate charge

Process for depositing and planarizing BPSG for dense trench MOSFET...

MOS-gated power device having segmented trench and extended doping...

Simplified ozonator for a semiconductor wafer cleaner

Potted transducer array with matching network in a multiple pass co...

MOS-gated power device with doped polysilicon body and process for...

Potted transducer array with matching network in a multiple pass co...

Process for forming high voltage junction termination extension oxide

Backmetal drain terminal with low stress and thermal resistance

Patents Applicationslast 30 patents

SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE

STRUCTURE AND METHOD FOR FORMING TRENCH-GATE FIELD EFFECT TRANSISTOR

Superjunction Structures for Power Devices and Methods of Manufacture

METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...

Trench-Gate Field Effect Transistors and Methods of Forming the Same

Method of Forming Shielded Gate Power Transistor Utilizing Chemical...

Method for Forming Shielded Gate Field Effect Transistors

Method of Forming Trench-Gate Field Effect Transistors

TRENCH-GATE FIELD EFFECT TRANSISTOR WITH CHANNEL ENHANCEMENT REGION...

Trench-Gate Field Effect Transistors and Methods of Forming the Same

Method for Forming Shielded Gate Field Effect Transistor Using Spacers

Methods of Forming Inter-poly Dielectric (IPD) Layers in Power Semi...

Trenched Shield Gate Power Semiconductor Devices and Methods of Man...

Power device utilizing chemical mechanical planarization

Trench FET with Improved Body to Gate Alignment

Structures and methods for forming shielded gate field effect trans...

Trench-gate field effect transistors and methods of forming the same

Power semiconductor devices and methods of manufacture

Power semiconductor devices and methods of manufacture

Power semiconductor devices and methods of manufacture

Dense trench MOSFET with decreased etch sensitivity to deposition a...

Buried gate-field termination structure

Dense trench MOSFET with decreased etch sensitivity to deposition a...

TRENCH MOSFET WITH LOW GATE CHARGE

Process for forming MOS-gated power device having segmented trench...

MOS-gated power device with doped polysilicon body and process for...

PROCESS FOR DEPOSITING AND PLANARIZING BPSG FOR DENSE TRENCH MOSFET...

Potted transducer array with matching network in a multiple pass co...

PROCESS FOR FORMING HIGH VOLTAGE JUNCTION TERMINATION EXTENSION OXIDE

Potted transducer array with matching network in a multiple pass co...