Rohit Galatage

Person

Hillsboro, OR, US

People

Patents Applicationslast 30 patents

Information Patent Application
TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...
- Publication number 20240222521
- Publication date Jul 4, 2024
- Intel Corporation
- Evan A. Clinton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...
- Publication number 20240222376
- Publication date Jul 4, 2024
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORI...
- Publication number 20240204060
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS
- Publication number 20240204103
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES
- Publication number 20230420460
- Publication date Dec 28, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS
- Publication number 20230420528
- Publication date Dec 28, 2023
- Intel Corporation
- Nitesh Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS
- Publication number 20230420562
- Publication date Dec 28, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES
- Publication number 20230402507
- Publication date Dec 14, 2023
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURC...
- Publication number 20230402513
- Publication date Dec 14, 2023
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE REMOVAL OF CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA...
- Publication number 20230395678
- Publication date Dec 7, 2023
- Intel Corporation
- Munzarin F. Qayyum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DE...
- Publication number 20230395697
- Publication date Dec 7, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SOURCE AND DRAIN CONTACTS TUNED FOR VERTICALLY STACKED PMOS AND...
- Publication number 20230395718
- Publication date Dec 7, 2023
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SOURCE AND DRAIN CONTACTS TUNED FOR PMOS AND NMOS
- Publication number 20230395717
- Publication date Dec 7, 2023
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS

Rohit Galatage

Person

Patents Applicationslast 30 patents

TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...

TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...

NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORI...

TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS

LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES

SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS

DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS

DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES

SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURC...

SELECTIVE REMOVAL OF CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA...

REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DE...

3D SOURCE AND DRAIN CONTACTS TUNED FOR VERTICALLY STACKED PMOS AND...

3D SOURCE AND DRAIN CONTACTS TUNED FOR PMOS AND NMOS