Rohit Pal

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Spacer defined fin growth and differential fin width
- Patent number 9,875,936
- Issue date Jan 23, 2018
- GLOBALFOUNDRIES Inc.
- Ryan Sporer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration method for fabrication of metal gate based multiple thr...
- Patent number 9,455,201
- Issue date Sep 27, 2016
- GLOBALFOUNDRIES Inc.
- Manoj Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having multiple threshold voltages
- Patent number 9,362,180
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage control for mixed-type non-planar semiconductor d...
- Patent number 9,362,284
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate height uniformity in semiconductor devices
- Patent number 9,349,814
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Tsung-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage control for mixed-type non-planar semiconductor d...
- Patent number 9,209,186
- Issue date Dec 8, 2015
- GLOBALFOUNDRIES Inc.
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement low-K spacer
- Patent number 9,159,567
- Issue date Oct 13, 2015
- GLOBALFOUNDRIES Inc.
- Changyong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate height uniformity in semiconductor devices
- Patent number 9,093,560
- Issue date Jul 28, 2015
- GLOBALFOUNDRIES Inc.
- Tsung-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate electrode structures formed by early cap layer ad...
- Patent number 8,664,057
- Issue date Mar 4, 2014
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a channel semiconductor alloy by forming a nitride bas...
- Patent number 8,664,066
- Issue date Mar 4, 2014
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned embedded SiGe structure and method of manufacturing th...
- Patent number 8,598,009
- Issue date Dec 3, 2013
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting threshold voltage for sophisticated transistors by diffus...
- Patent number 8,525,289
- Issue date Sep 3, 2013
- GLOBALFOUNDRIES Inc.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductors with high-K/metal gate electrodes
- Patent number 8,445,964
- Issue date May 21, 2013
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate etch optimization through silicon dopant profile change
- Patent number 8,390,042
- Issue date Mar 5, 2013
- GLOBALFOUNDRIES Inc.
- Man Fai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device structure with back side source/dra...
- Patent number 8,373,228
- Issue date Feb 12, 2013
- GLOBALFOUNDRIES, INC.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a transistor device having asymmetric embed...
- Patent number 8,293,609
- Issue date Oct 23, 2012
- GLOBALFOUNDRIES, INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device structure with back side gate conta...
- Patent number 8,294,211
- Issue date Oct 23, 2012
- GLOBALFOUNDRIES, INC.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for protecting film layers while removing hardmasks during...
- Patent number 8,278,165
- Issue date Oct 2, 2012
- GLOBALFOUNDRIES, INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned embedded SiGe structure and method of manufacturing th...
- Patent number 8,222,673
- Issue date Jul 17, 2012
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for protecting gate stacks during fabrication of semiconduc...
- Patent number 8,217,463
- Issue date Jul 10, 2012
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting threshold voltage for sophisticated transistors by diffus...
- Patent number 8,198,192
- Issue date Jun 12, 2012
- GLOBALFOUNDRIES Inc.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having asymmetric embedded strain elements and re...
- Patent number 8,148,750
- Issue date Apr 3, 2012
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate etch optimization through silicon dopant profile change
- Patent number 8,124,515
- Issue date Feb 28, 2012
- GLOBALFOUNDRIES Inc.
- Man Fai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductors with high-K/metal gate electrodes
- Patent number 8,119,464
- Issue date Feb 21, 2012
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for protecting gate stacks during fabrication of semiconduc...
- Patent number 8,084,828
- Issue date Dec 27, 2011
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating MOS devices having highly stressed channels
- Patent number 8,076,209
- Issue date Dec 13, 2011
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor devices having doped silicon-compromising...
- Patent number 8,026,539
- Issue date Sep 27, 2011
- GLOBALFOUNDRIES Inc.
- Michael Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having faceted silicide contacts, and related...
- Patent number 7,994,014
- Issue date Aug 9, 2011
- Advanced Micro Devices, Inc.
- Frank Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor transistor with reduced gate height, and...
- Patent number 7,960,229
- Issue date Jun 14, 2011
- GLOBALFOUNDRIES Inc.
- Frank Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having asymmetric embedded strain elements and re...
- Patent number 7,939,852
- Issue date May 10, 2011
- GLOBALFOUNDRIES Inc.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPACER DEFINED FIN GROWTH AND DIFFERENTIAL FIN WIDTH
- Publication number 20180130712
- Publication date May 10, 2018
- GLOBALFOUNDRIES INC.
- Ryan SPORER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR SCANNING OBJECTS
- Publication number 20160057302
- Publication date Feb 25, 2016
- AUM Research LLC
- Vithi Mittal
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
THRESHOLD VOLTAGE CONTROL FOR MIXED-TYPE NON-PLANAR SEMICONDUCTOR D...
- Publication number 20160049400
- Publication date Feb 18, 2016
- GLOBALFOUNDRIES INC.
- Mitsuhiro TOGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE CONTROL FOR MIXED-TYPE NON-PLANAR SEMICONDUCTOR D...
- Publication number 20150380409
- Publication date Dec 31, 2015
- GLOBALFOUNDRIES INC.
- Mitsuhiro TOGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT LOW-K SPACER
- Publication number 20150311083
- Publication date Oct 29, 2015
- GLOBALFOUNDRIES INC.
- Changyong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES
- Publication number 20150270364
- Publication date Sep 24, 2015
- GLOBALFOUNDRIES INC.
- Tsung-Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING MULTIPLE THRESHOLD VOLTAGES
- Publication number 20150243563
- Publication date Aug 27, 2015
- GLOBALFOUNDRIES INC.
- Bongki LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION METHOD FOR FABRICATION OF METAL GATE BASED MULTIPLE THR...
- Publication number 20150243652
- Publication date Aug 27, 2015
- GLOBALFOUNDRIES INC.
- Manoj JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES
- Publication number 20150084131
- Publication date Mar 26, 2015
- Tsung-Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR SCANNING OBJECTS
- Publication number 20150055189
- Publication date Feb 26, 2015
- AUM Research LLC
- Vithi Mittal
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY FORMING A NITRIDE BAS...
- Publication number 20130040430
- Publication date Feb 14, 2013
- GLOBALFOUNDRIES INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY EARLY CAP LAYER AD...
- Publication number 20130034942
- Publication date Feb 7, 2013
- GLOBALFOUNDRIES INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING TH...
- Publication number 20120208337
- Publication date Aug 16, 2012
- GLOBALFOUNDRIES INC.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUS...
- Publication number 20120193727
- Publication date Aug 2, 2012
- GLOBALFOUNDRIES INC.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A TRANSISTOR DEVICE HAVING ASYMMETRIC EMBED...
- Publication number 20120129311
- Publication date May 24, 2012
- GLOBALFOUNDRIES INC.
- Rohit PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ETCH OPTIMIZATION THROUGH SILICON DOPANT PROFILE CHANGE
- Publication number 20120119308
- Publication date May 17, 2012
- GLOBALFOUNDRIES INC.
- Man Fai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF SEMICONDUCTORS WITH HIGH-K/METAL GATE ELECTRODES
- Publication number 20120112281
- Publication date May 10, 2012
- GLOBALFOUNDRIES INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING TH...
- Publication number 20110298008
- Publication date Dec 8, 2011
- GLOBALFOUNDRIES INC.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH REDUCED GATE HEIGHT, AND...
- Publication number 20110204446
- Publication date Aug 25, 2011
- GLOBALFOUNDRIES INC.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR DEVICE STRUCTURE WITH BACK SIDE SOURCE/DRA...
- Publication number 20110169083
- Publication date Jul 14, 2011
- GLOBALFOUNDRIES INC.
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR DEVICE STRUCTURE WITH BACK SIDE GATE CONTA...
- Publication number 20110169084
- Publication date Jul 14, 2011
- GLOBALFOUNDRIES INC.
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING ASYMMETRIC EMBEDDED STRAIN ELEMENTS AND RE...
- Publication number 20110169073
- Publication date Jul 14, 2011
- GLOBALFOUNDRIES INC.
- Rohit PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...
- Publication number 20110121397
- Publication date May 26, 2011
- GLOBALFOUNDRIES INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...
- Publication number 20110095341
- Publication date Apr 28, 2011
- GLOBALFOUNDRIES INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PROTECTING FILM LAYERS WHILE REMOVING HARDMASKS DURING...
- Publication number 20110086495
- Publication date Apr 14, 2011
- GLOBALFOUNDRIES INC.
- Rohit PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF SEMICONDUCTORS WITH HIGH-K/METAL GATE ELECTRODES
- Publication number 20110062519
- Publication date Mar 17, 2011
- GLOBALFOUNDRIES INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ETCH OPTIMIZATION THROUGH SILICON DOPANT PROFILE CHANGE
- Publication number 20100295103
- Publication date Nov 25, 2010
- GLOBALFOUNDRIES INC.
- Man Fai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUS...
- Publication number 20100289089
- Publication date Nov 18, 2010
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...
- Publication number 20100244156
- Publication date Sep 30, 2010
- GLOBALFOUNDRIES INC.
- Rohit Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING MOS DEVICES HAVING HIGHLY STRESSED CHANNELS
- Publication number 20100210084
- Publication date Aug 19, 2010
- Advanced Micro Devices, Inc.
- Frank Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Spacer defined fin growth and differential fin width

Integration method for fabrication of metal gate based multiple thr...

Integrated circuit having multiple threshold voltages

Threshold voltage control for mixed-type non-planar semiconductor d...

Gate height uniformity in semiconductor devices

Threshold voltage control for mixed-type non-planar semiconductor d...

Replacement low-K spacer

Gate height uniformity in semiconductor devices

High-K metal gate electrode structures formed by early cap layer ad...

Formation of a channel semiconductor alloy by forming a nitride bas...

Self-aligned embedded SiGe structure and method of manufacturing th...

Adjusting threshold voltage for sophisticated transistors by diffus...

Fabrication of semiconductors with high-K/metal gate electrodes

Gate etch optimization through silicon dopant profile change

Semiconductor transistor device structure with back side source/dra...

Method of manufacturing a transistor device having asymmetric embed...

Semiconductor transistor device structure with back side gate conta...

Methods for protecting film layers while removing hardmasks during...

Self-aligned embedded SiGe structure and method of manufacturing th...

Methods for protecting gate stacks during fabrication of semiconduc...

Adjusting threshold voltage for sophisticated transistors by diffus...

Transistor device having asymmetric embedded strain elements and re...

Gate etch optimization through silicon dopant profile change

Fabrication of semiconductors with high-K/metal gate electrodes

Methods for protecting gate stacks during fabrication of semiconduc...

Methods for fabricating MOS devices having highly stressed channels

Metal oxide semiconductor devices having doped silicon-compromising...

Semiconductor devices having faceted silicide contacts, and related...

Metal oxide semiconductor transistor with reduced gate height, and...

Transistor device having asymmetric embedded strain elements and re...

Patents Applicationslast 30 patents

SPACER DEFINED FIN GROWTH AND DIFFERENTIAL FIN WIDTH

SYSTEM AND METHOD FOR SCANNING OBJECTS

THRESHOLD VOLTAGE CONTROL FOR MIXED-TYPE NON-PLANAR SEMICONDUCTOR D...

THRESHOLD VOLTAGE CONTROL FOR MIXED-TYPE NON-PLANAR SEMICONDUCTOR D...

REPLACEMENT LOW-K SPACER

GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES

INTEGRATED CIRCUIT HAVING MULTIPLE THRESHOLD VOLTAGES

INTEGRATION METHOD FOR FABRICATION OF METAL GATE BASED MULTIPLE THR...

GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES

SYSTEM AND METHOD FOR SCANNING OBJECTS

FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY FORMING A NITRIDE BAS...

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY EARLY CAP LAYER AD...

SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING TH...

ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUS...

METHOD OF MANUFACTURING A TRANSISTOR DEVICE HAVING ASYMMETRIC EMBED...

GATE ETCH OPTIMIZATION THROUGH SILICON DOPANT PROFILE CHANGE

FABRICATION OF SEMICONDUCTORS WITH HIGH-K/METAL GATE ELECTRODES

SELF-ALIGNED EMBEDDED SiGe STRUCTURE AND METHOD OF MANUFACTURING TH...

METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH REDUCED GATE HEIGHT, AND...

SEMICONDUCTOR TRANSISTOR DEVICE STRUCTURE WITH BACK SIDE SOURCE/DRA...

SEMICONDUCTOR TRANSISTOR DEVICE STRUCTURE WITH BACK SIDE GATE CONTA...

TRANSISTOR DEVICE HAVING ASYMMETRIC EMBEDDED STRAIN ELEMENTS AND RE...

METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...

METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...

METHODS FOR PROTECTING FILM LAYERS WHILE REMOVING HARDMASKS DURING...

FABRICATION OF SEMICONDUCTORS WITH HIGH-K/METAL GATE ELECTRODES

GATE ETCH OPTIMIZATION THROUGH SILICON DOPANT PROFILE CHANGE

ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUS...

METHODS FOR PROTECTING GATE STACKS DURING FABRICATION OF SEMICONDUC...

METHODS FOR FABRICATING MOS DEVICES HAVING HIGHLY STRESSED CHANNELS