Romain Esteve

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,626,477
- Issue date Apr 11, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device with...
- Patent number 11,195,946
- Issue date Dec 7, 2021
- Infineon Technologies AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Particle irradiation apparatus, beam modifier device, and semicondu...
- Patent number 10,915,029
- Issue date Feb 9, 2021
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench gate structure including a gate el...
- Patent number 10,734,514
- Issue date Aug 4, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diode region
- Patent number 10,727,330
- Issue date Jul 28, 2020
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a source electrode contact trench
- Patent number 10,700,192
- Issue date Jun 30, 2020
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device
- Patent number 10,679,983
- Issue date Jun 9, 2020
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with trench gate structures in a semiconducto...
- Patent number 10,361,192
- Issue date Jul 23, 2019
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming compound semiconductor body
- Patent number 10,332,876
- Issue date Jun 25, 2019
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device by r...
- Patent number 10,217,636
- Issue date Feb 26, 2019
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diode region and trench gate structure
- Patent number 10,211,306
- Issue date Feb 19, 2019
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Particle irradiation apparatus, beam modifier device, and semicondu...
- Patent number 10,120,287
- Issue date Nov 6, 2018
- Infineon Technologies AG
- Roland Rupp
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Semiconductor device with trench gate structure including a gate el...
- Patent number 10,074,741
- Issue date Sep 11, 2018
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned silicon carbide contact formation using protective layer
- Patent number 10,049,879
- Issue date Aug 14, 2018
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and transistor cell having a diode region
- Patent number 10,038,087
- Issue date Jul 31, 2018
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide transistor device with a shielded gate
- Patent number 9,960,230
- Issue date May 1, 2018
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device
- Patent number 9,941,272
- Issue date Apr 10, 2018
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device by r...
- Patent number 9,934,972
- Issue date Apr 3, 2018
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide transistor device with a shielded gate
- Patent number 9,923,053
- Issue date Mar 20, 2018
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon based contact structure for silicon carbide device technical...
- Patent number 9,917,170
- Issue date Mar 13, 2018
- Infineon Technologies AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and transistor cell having a diode region
- Patent number 9,876,103
- Issue date Jan 23, 2018
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a trench electrode
- Patent number 9,837,527
- Issue date Dec 5, 2017
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device including trench gate structures with lo...
- Patent number 9,818,818
- Issue date Nov 14, 2017
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a vertical junction field effect transistor
- Patent number 9,666,696
- Issue date May 30, 2017
- Infineon Technologes Austria AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned silicon carbide contact formation using protective layer
- Patent number 9,666,482
- Issue date May 30, 2017
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a silicon-carbide device with a shielded gate
- Patent number 9,577,073
- Issue date Feb 21, 2017
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a silicon-carbide device with a shielded gate
- Patent number 9,543,414
- Issue date Jan 10, 2017
- Infineon Technologies AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a lower diode region arranged below a t...
- Patent number 9,478,655
- Issue date Oct 25, 2016
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,293,558
- Issue date Mar 22, 2016
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical JFET with body diode and device regions disposed in a sing...
- Patent number 9,209,318
- Issue date Dec 8, 2015
- Infineon Technologies Austria AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20210343835
- Publication date Nov 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE WITH...
- Publication number 20210167203
- Publication date Jun 3, 2021
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Diode Region
- Publication number 20200044076
- Publication date Feb 6, 2020
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Source Electrode Contact Trench
- Publication number 20190157447
- Publication date May 23, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Compound Semiconductor Body
- Publication number 20190081039
- Publication date Mar 14, 2019
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTICLE IRRADIATION APPARATUS, BEAM MODIFIER DEVICE, AND SEMICONDU...
- Publication number 20190049850
- Publication date Feb 14, 2019
- INFINEON TECHNOLOGIES AG
- Roland RUPP
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Semiconductor Device with Trench Gate Structure Including a Gate El...
- Publication number 20180350968
- Publication date Dec 6, 2018
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Transistor Cell Having a Diode Region
- Publication number 20180315845
- Publication date Nov 1, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices with Trench Gate Structures in a Semiconducto...
- Publication number 20180294260
- Publication date Oct 11, 2018
- INFINEON TECHNOLOGIES AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Transistor Device with a Variable Gate Dielectric Thickness
- Publication number 20180248000
- Publication date Aug 30, 2018
- INFINEON TECHNOLOGIES AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Silicon Carbide Semiconductor Device by R...
- Publication number 20180204725
- Publication date Jul 19, 2018
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Producing a Semiconductor Device
- Publication number 20180197852
- Publication date Jul 12, 2018
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Diode Region and Trench Gate Structure
- Publication number 20180158920
- Publication date Jun 7, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Transistor Cell Having a Diode Region
- Publication number 20180122931
- Publication date May 3, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self Aligned Silicon Carbide Contact Formation Using Protective Layer
- Publication number 20180076036
- Publication date Mar 15, 2018
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Source Trench Electrode
- Publication number 20180053841
- Publication date Feb 22, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide-Bandgap Semiconductor Device with Trench Gate Structures
- Publication number 20170345905
- Publication date Nov 30, 2017
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon Vacancy Defect Reduction Method for SiC
- Publication number 20170309484
- Publication date Oct 26, 2017
- INFINEON TECHNOLOGIES AG
- Mihai Draghici
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon Based Contact Structure for Silicon Carbide Device Technical...
- Publication number 20170309720
- Publication date Oct 26, 2017
- INFINEON TECHNOLOGIES AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-Carbide Transistor Device with a Shielded Gate
- Publication number 20170117352
- Publication date Apr 27, 2017
- INFINEON TECHNOLOGIES AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Silicon Carbide Semiconductor Device by R...
- Publication number 20170103894
- Publication date Apr 13, 2017
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTICLE IRRADIATION APPARATUS, BEAM MODIFIER DEVICE, AND SEMICONDU...
- Publication number 20170059997
- Publication date Mar 2, 2017
- INFINEON TECHNOLOGIES AG
- Roland RUPP
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Transistor Cell Having a Diode Region
- Publication number 20170033212
- Publication date Feb 2, 2017
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Including Trench Gate Structures with Lo...
- Publication number 20160260798
- Publication date Sep 8, 2016
- INFINEON TECHNOLOGIES AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Trench Gate Structure Including a Gate El...
- Publication number 20160260829
- Publication date Sep 8, 2016
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Producing a Semiconductor Device
- Publication number 20160190121
- Publication date Jun 30, 2016
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SILICON-CARBIDE DEVICE WITH A SHIELDED GATE
- Publication number 20160172468
- Publication date Jun 16, 2016
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Trench Electrode
- Publication number 20160163852
- Publication date Jun 9, 2016
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Vertical Junction Field Effect Transistor
- Publication number 20160064534
- Publication date Mar 3, 2016
- Infineon Technologes Austria AG
- Romain Esteve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Lower Diode Region Arranged Below a T...
- Publication number 20150340487
- Publication date Nov 26, 2015
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS

Romain Esteve

Person

Patents Grantslast 30 patents

Silicon carbide field-effect transistor including shielding areas

Method of manufacturing a silicon carbide semiconductor device with...

Particle irradiation apparatus, beam modifier device, and semicondu...

Semiconductor device with trench gate structure including a gate el...

Semiconductor device with diode region

Semiconductor device having a source electrode contact trench

Method of producing a semiconductor device

Semiconductor devices with trench gate structures in a semiconducto...

Method of forming compound semiconductor body

Method of manufacturing a silicon carbide semiconductor device by r...

Semiconductor device with diode region and trench gate structure

Particle irradiation apparatus, beam modifier device, and semicondu...

Semiconductor device with trench gate structure including a gate el...

Self aligned silicon carbide contact formation using protective layer

Semiconductor device and transistor cell having a diode region

Silicon-carbide transistor device with a shielded gate

Method of producing a semiconductor device

Method of manufacturing a silicon carbide semiconductor device by r...

Silicon-carbide transistor device with a shielded gate

Carbon based contact structure for silicon carbide device technical...

Semiconductor device and transistor cell having a diode region

Semiconductor device with a trench electrode

Power semiconductor device including trench gate structures with lo...

Method of manufacturing a vertical junction field effect transistor

Self aligned silicon carbide contact formation using protective layer

Method of forming a silicon-carbide device with a shielded gate

Method of forming a silicon-carbide device with a shielded gate

Semiconductor device having a lower diode region arranged below a t...

Semiconductor device

Vertical JFET with body diode and device regions disposed in a sing...

Patents Applicationslast 30 patents

Silicon Carbide Semiconductor Component

METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE WITH...

Semiconductor Device with Diode Region

Semiconductor Device Having a Source Electrode Contact Trench

Method of Forming Compound Semiconductor Body

PARTICLE IRRADIATION APPARATUS, BEAM MODIFIER DEVICE, AND SEMICONDU...

Semiconductor Device with Trench Gate Structure Including a Gate El...

Semiconductor Device and Transistor Cell Having a Diode Region

Semiconductor Devices with Trench Gate Structures in a Semiconducto...

Vertical Transistor Device with a Variable Gate Dielectric Thickness

Method of Manufacturing a Silicon Carbide Semiconductor Device by R...

Method of Producing a Semiconductor Device

Semiconductor Device with Diode Region and Trench Gate Structure

Semiconductor Device and Transistor Cell Having a Diode Region

Self Aligned Silicon Carbide Contact Formation Using Protective Layer

Semiconductor Device with a Source Trench Electrode

Wide-Bandgap Semiconductor Device with Trench Gate Structures

Carbon Vacancy Defect Reduction Method for SiC

Carbon Based Contact Structure for Silicon Carbide Device Technical...

Silicon-Carbide Transistor Device with a Shielded Gate

Method of Manufacturing a Silicon Carbide Semiconductor Device by R...

PARTICLE IRRADIATION APPARATUS, BEAM MODIFIER DEVICE, AND SEMICONDU...

Semiconductor Device and Transistor Cell Having a Diode Region

Power Semiconductor Device Including Trench Gate Structures with Lo...

Semiconductor Device with Trench Gate Structure Including a Gate El...

Method of Producing a Semiconductor Device

METHOD OF FORMING A SILICON-CARBIDE DEVICE WITH A SHIELDED GATE

Semiconductor Device with a Trench Electrode

Method of Manufacturing a Vertical Junction Field Effect Transistor

Semiconductor Device Having a Lower Diode Region Arranged Below a T...