Romain Esteve

Person

Villach, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing semiconductor device with silicon carbide body
- Patent number 11,881,512
- Issue date Jan 23, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming a semiconductor device
- Patent number 11,842,938
- Issue date Dec 12, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with compensation region and method of manuf...
- Patent number 11,764,063
- Issue date Sep 19, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with channel regions extending along at least one of the...
- Patent number 11,462,611
- Issue date Oct 4, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with Schottky contact
- Patent number 11,380,756
- Issue date Jul 5, 2022
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming a semiconductor device
- Patent number 11,217,500
- Issue date Jan 4, 2022
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicon carbide body
- Patent number 11,195,921
- Issue date Dec 7, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,101,343
- Issue date Aug 24, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC power semiconductor device with integrated Schottky junction
- Patent number 10,985,248
- Issue date Apr 20, 2021
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with trench gate structure and...
- Patent number 10,964,808
- Issue date Mar 30, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device and methods of manufacturing thereof
- Patent number 10,896,952
- Issue date Jan 19, 2021
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor cells and a drift structure an...
- Patent number 10,700,182
- Issue date Jun 30, 2020
- Infineon Technologies AG
- Thomas Aichinger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
SiC trench transistor device and methods of manufacturing thereof
- Patent number 10,586,845
- Issue date Mar 10, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with buried doped region
- Patent number 10,580,878
- Issue date Mar 3, 2020
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device with offset in trench bottom
- Patent number 10,553,685
- Issue date Feb 4, 2020
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a metal contact layer on silicon carbide and semiconductor...
- Patent number 10,256,097
- Issue date Apr 9, 2019
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with trench gate structures in a semiconducto...
- Patent number 9,997,515
- Issue date Jun 12, 2018
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with trench gate structures in a semiconducto...
- Patent number 9,741,712
- Issue date Aug 22, 2017
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device with Silicon Carbide Body and Method of Manufa...
- Publication number 20220059659
- Publication date Feb 24, 2022
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device with Channel Regions Extending Along at least one of the...
- Publication number 20210118986
- Publication date Apr 22, 2021
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Compensation Layer and Method of Manufa...
- Publication number 20210013310
- Publication date Jan 14, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH COMPENSATION REGION AND METHOD OF MANUF...
- Publication number 20200381253
- Publication date Dec 3, 2020
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH SCHOTTKY CONTACT
- Publication number 20200219972
- Publication date Jul 9, 2020
- INFINEON TECHNOLOGIES AG
- Caspar LEENDERTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device and Methods of Manufacturing Thereof
- Publication number 20200194544
- Publication date Jun 18, 2020
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Power Semiconductor Device with Integrated Schottky Junction
- Publication number 20200161433
- Publication date May 21, 2020
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device with Buried Doped Region
- Publication number 20200058760
- Publication date Feb 20, 2020
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND TRANSISTOR...
- Publication number 20200006544
- Publication date Jan 2, 2020
- INFINEON TECHNOLOGIES AG
- Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Silicon Carbide Body and Method of Manufa...
- Publication number 20190355819
- Publication date Nov 21, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20190341447
- Publication date Nov 7, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming a Semiconductor Device
- Publication number 20190311966
- Publication date Oct 10, 2019
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Device with Trench Gate Structure and...
- Publication number 20190097042
- Publication date Mar 28, 2019
- INFINEON TECHNOLOGIES AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Transistor Cells and a Drift Structure an...
- Publication number 20180331204
- Publication date Nov 15, 2018
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SiC Semiconductor Device with Offset in Trench Bottom
- Publication number 20180308938
- Publication date Oct 25, 2018
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a Metal Contact Layer on Silicon Carbide and Semiconductor...
- Publication number 20180174840
- Publication date Jun 21, 2018
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices with Trench Gate Structures in a Semiconducto...
- Publication number 20170345818
- Publication date Nov 30, 2017
- INFINEON TECHNOLOGIES AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices with Trench Gate Structures in a Semiconducto...
- Publication number 20160260709
- Publication date Sep 8, 2016
- INFINEON TECHNOLOGIES AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS

Romain Esteve

Person

Patents Grantslast 30 patents

Method of manufacturing semiconductor device with silicon carbide body

Semiconductor device and method for forming a semiconductor device

Silicon carbide device with compensation region and method of manuf...

SiC device with channel regions extending along at least one of the...

Silicon carbide device with Schottky contact

Semiconductor device and method for forming a semiconductor device

Semiconductor device with silicon carbide body

Silicon carbide field-effect transistor including shielding areas

SiC power semiconductor device with integrated Schottky junction

Silicon carbide semiconductor device with trench gate structure and...

SiC device and methods of manufacturing thereof

Semiconductor device with transistor cells and a drift structure an...

SiC trench transistor device and methods of manufacturing thereof

SiC device with buried doped region

SiC semiconductor device with offset in trench bottom

Forming a metal contact layer on silicon carbide and semiconductor...

Semiconductor devices with trench gate structures in a semiconducto...

Semiconductor devices with trench gate structures in a semiconducto...

Patents Applicationslast 30 patents

Semiconductor Device with Silicon Carbide Body and Method of Manufa...

SiC Device with Channel Regions Extending Along at least one of the...

Silicon Carbide Device with Compensation Layer and Method of Manufa...

SILICON CARBIDE DEVICE WITH COMPENSATION REGION AND METHOD OF MANUF...

SILICON CARBIDE DEVICE WITH SCHOTTKY CONTACT

SiC Device and Methods of Manufacturing Thereof

SiC Power Semiconductor Device with Integrated Schottky Junction

SiC Device with Buried Doped Region

SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND TRANSISTOR...

Semiconductor Device with Silicon Carbide Body and Method of Manufa...

Silicon Carbide Semiconductor Component

Semiconductor Device and Method for Forming a Semiconductor Device

Silicon Carbide Semiconductor Device with Trench Gate Structure and...

Semiconductor Device with Transistor Cells and a Drift Structure an...

SiC Semiconductor Device with Offset in Trench Bottom

Forming a Metal Contact Layer on Silicon Carbide and Semiconductor...

Semiconductor Devices with Trench Gate Structures in a Semiconducto...

Semiconductor Devices with Trench Gate Structures in a Semiconducto...