Roman Baburske

Person

Otterfing, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including first gate electrode and second gate...
- Patent number 12,255,251
- Issue date Mar 18, 2025
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 12,249,551
- Issue date Mar 11, 2025
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 12,199,146
- Issue date Jan 14, 2025
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,848,354
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device including first and second trench struct...
- Patent number 11,742,417
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Thorsten Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including first gate electrode and second gate...
- Patent number 11,728,417
- Issue date Aug 15, 2023
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a semiconductor channel region and a se...
- Patent number 11,721,689
- Issue date Aug 8, 2023
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 11,682,700
- Issue date Jun 20, 2023
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode with structured barrier region
- Patent number 11,538,906
- Issue date Dec 27, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 11,437,471
- Issue date Sep 6, 2022
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having overload current carrying capability
- Patent number 11,410,989
- Issue date Aug 9, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC IGBT with an IGBT section and a diode section
- Patent number 11,398,472
- Issue date Jul 26, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 11,264,459
- Issue date Mar 1, 2022
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die, semiconductor device and IGBT module
- Patent number 11,257,914
- Issue date Feb 22, 2022
- Infineon Technologies AG
- Vera Van Treek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,133,380
- Issue date Sep 28, 2021
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 10,978,560
- Issue date Apr 13, 2021
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with separation regions
- Patent number 10,903,344
- Issue date Jan 26, 2021
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric assembly including an insulated gate bipolar transistor de...
- Patent number 10,886,909
- Issue date Jan 5, 2021
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor cells and enhancement cells wi...
- Patent number 10,825,906
- Issue date Nov 3, 2020
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having overload current carrying capability
- Patent number 10,651,165
- Issue date May 12, 2020
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel bipolar power semiconductor device with P-layer in the dr...
- Patent number 10,546,939
- Issue date Jan 28, 2020
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with high current robustness
- Patent number 10,483,384
- Issue date Nov 19, 2019
- Infineon Technologies AG
- Riteshkumar Bhojani
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device having an insulated gate bipolar transistor ar...
- Patent number 10,475,910
- Issue date Nov 12, 2019
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric assembly including a bipolar switching device and a wide b...
- Patent number 10,475,909
- Issue date Nov 12, 2019
- Infineon Technologies, AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device
- Patent number 10,461,739
- Issue date Oct 29, 2019
- Infineon Technologies Austria AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device
- Patent number 10,404,250
- Issue date Sep 3, 2019
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with separation regions
- Patent number 10,381,467
- Issue date Aug 13, 2019
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a clamping structure
- Patent number 10,340,264
- Issue date Jul 2, 2019
- Infineon Technologies Austria AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 10,340,337
- Issue date Jul 2, 2019
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric assembly including a semiconductor switching device and a...
- Patent number 10,333,387
- Issue date Jun 25, 2019
- Infineon Techonologies AG
- Thomas Basler
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Patents Applicationslast 30 patents

Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Low Gate...
- Publication number 20250081563
- Publication date Mar 6, 2025
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
Information Patent Application
RC IGBT and Method of Operating an RC IGBT
- Publication number 20250006729
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT, Method of Operating an RC IGBT, and a Circuit Including an IGBT
- Publication number 20250006727
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS
- Publication number 20240304709
- Publication date Sep 12, 2024
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device, Method of Producing a Power Semiconduct...
- Publication number 20240047457
- Publication date Feb 8, 2024
- INFINEON TECHNOLOGIES AG
- Francisco Javier Santos Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including First Gate Electrode and Second Gate...
- Publication number 20230343863
- Publication date Oct 26, 2023
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Low Gate...
- Publication number 20230307499
- Publication date Sep 28, 2023
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Gate Power Semiconductor Device and Method of Controlling a Du...
- Publication number 20230307531
- Publication date Sep 28, 2023
- INFINEON TECHNOLOGIES AG
- Roman BABURSKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Gate Power Semiconductor Device and Method of Controlling a Du...
- Publication number 20230290869
- Publication date Sep 14, 2023
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCHING MODULE WITH INSULATED GATE BIPOLAR TRANSIST...
- Publication number 20230275576
- Publication date Aug 31, 2023
- INFINEON TECHNOLOGIES AG
- Roman BABURSKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20230087353
- Publication date Mar 23, 2023
- INFINEON TECHNOLOGIES AG
- Werner Schustereder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20220375811
- Publication date Nov 24, 2022
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR CHANNEL REGION AND A SE...
- Publication number 20220367443
- Publication date Nov 17, 2022
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT, Method of Producing an RC IGBT and Method of Controlling a...
- Publication number 20220093585
- Publication date Mar 24, 2022
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mesa Contact for MOS Controlled Power Semiconductor Device
- Publication number 20220069079
- Publication date Mar 3, 2022
- Ute Queitsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including First Gate Electrode and Second Gate...
- Publication number 20220059682
- Publication date Feb 24, 2022
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Including First and Second Trench Struct...
- Publication number 20220052190
- Publication date Feb 17, 2022
- Thorsten Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode Structure of a Power Semiconductor Device
- Publication number 20210376069
- Publication date Dec 2, 2021
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Low Gate...
- Publication number 20210210604
- Publication date Jul 8, 2021
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20210193800
- Publication date Jun 24, 2021
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Die, Semiconductor Device and IGBT Module
- Publication number 20210119003
- Publication date Apr 22, 2021
- Vera Van Treek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT with an IGBT Section and a Diode Section
- Publication number 20210083081
- Publication date Mar 18, 2021
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode with Structured Barrier Region
- Publication number 20210083051
- Publication date Mar 18, 2021
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Overload Current Carrying Capability
- Publication number 20200243509
- Publication date Jul 30, 2020
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20200194550
- Publication date Jun 18, 2020
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode Structure of a Power Semiconductor Device
- Publication number 20190319092
- Publication date Oct 17, 2019
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability and Low Gate Charge
- Publication number 20190305087
- Publication date Oct 3, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...
- Publication number 20190288088
- Publication date Sep 19, 2019
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Separation Regions
- Publication number 20190288094
- Publication date Sep 19, 2019
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Transistor Cells and Enhancement Cells
- Publication number 20180277642
- Publication date Sep 27, 2018
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS

Roman Baburske

Person

Patents Grantslast 30 patents

Semiconductor device including first gate electrode and second gate...

Power semiconductor device

Power semiconductor device with dV/dt controllability and low gate...

Diode structure of a power semiconductor device

Power semiconductor device including first and second trench struct...

Semiconductor device including first gate electrode and second gate...

Semiconductor device having a semiconductor channel region and a se...

Power semiconductor device with dV/dt controllability and low gate...

Diode with structured barrier region

Power semiconductor device

Semiconductor device having overload current carrying capability

RC IGBT with an IGBT section and a diode section

Power semiconductor device

Semiconductor die, semiconductor device and IGBT module

Diode structure of a power semiconductor device

Power semiconductor device with dV/dt controllability and low gate...

Semiconductor device with separation regions

Electric assembly including an insulated gate bipolar transistor de...

Semiconductor device with transistor cells and enhancement cells wi...

Semiconductor device having overload current carrying capability

N-channel bipolar power semiconductor device with P-layer in the dr...

Transistor device with high current robustness

Semiconductor device having an insulated gate bipolar transistor ar...

Electric assembly including a bipolar switching device and a wide b...

Transistor device

Transistor device

Semiconductor device with separation regions

Semiconductor device comprising a clamping structure

Diode structure of a power semiconductor device

Electric assembly including a semiconductor switching device and a...

Patents Applicationslast 30 patents

Power Semiconductor Device with dV/dt Controllability and Low Gate...

RC IGBT and Method of Operating an RC IGBT

IGBT, Method of Operating an RC IGBT, and a Circuit Including an IGBT

SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS

Power Semiconductor Device, Method of Producing a Power Semiconduct...

Semiconductor Device Including First Gate Electrode and Second Gate...

Power Semiconductor Device with dV/dt Controllability and Low Gate...

Dual Gate Power Semiconductor Device and Method of Controlling a Du...

Dual Gate Power Semiconductor Device and Method of Controlling a Du...

SEMICONDUCTOR SWITCHING MODULE WITH INSULATED GATE BIPOLAR TRANSIST...

Power Semiconductor Device and Method of Producing a Power Semicond...

Power Semiconductor Device

SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR CHANNEL REGION AND A SE...

RC IGBT, Method of Producing an RC IGBT and Method of Controlling a...

Mesa Contact for MOS Controlled Power Semiconductor Device

Semiconductor Device Including First Gate Electrode and Second Gate...

Power Semiconductor Device Including First and Second Trench Struct...

Diode Structure of a Power Semiconductor Device

Power Semiconductor Device with dV/dt Controllability and Low Gate...

Power Semiconductor Device

Semiconductor Die, Semiconductor Device and IGBT Module

RC IGBT with an IGBT Section and a Diode Section

Diode with Structured Barrier Region

Semiconductor Device Having Overload Current Carrying Capability

Power Semiconductor Device

Diode Structure of a Power Semiconductor Device

IGBT with dV/dt Controllability and Low Gate Charge

N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...

Semiconductor Device with Separation Regions

Semiconductor Device with Transistor Cells and Enhancement Cells