Roman Chepulskyy

Person

Milipitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive memory elements for spin-transfer torque (STT) and...
- Patent number 12,114,578
- Issue date Oct 8, 2024
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
Information Patent Grant
Dipole-coupled spin-orbit torque structure
- Patent number 11,776,726
- Issue date Oct 3, 2023
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Race-track memory with improved domain wall motion control
- Patent number 11,348,627
- Issue date May 31, 2022
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing a diluted free layer magnetic junct...
- Patent number 10,205,092
- Issue date Feb 12, 2019
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing magnetic junctions usable in spin t...
- Patent number 10,121,960
- Issue date Nov 6, 2018
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic devices including magnetic junctions having tilted easy ax...
- Patent number 10,121,961
- Issue date Nov 6, 2018
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a diluted free layer magnetic junct...
- Patent number 10,003,015
- Issue date Jun 19, 2018
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-torque oscillator based on easy-cone anisotropy
- Patent number 9,966,901
- Issue date May 8, 2018
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
B2-MTJ design with texture blocking decoupling layer for sub-25 nm...
- Patent number 9,825,220
- Issue date Nov 21, 2017
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for removing boron from magnetic junctions usable...
- Patent number 9,735,350
- Issue date Aug 15, 2017
- Samsung Electronics Co., Ltd.
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing magnetic junctions including Heusle...
- Patent number 9,634,241
- Issue date Apr 25, 2017
- Samsung Electronics Co., Ltd.
- William H. Butler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing thermally assisted magnetic junctio...
- Patent number 9,490,000
- Issue date Nov 8, 2016
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing magnetic layers having insertion la...
- Patent number 9,478,730
- Issue date Oct 25, 2016
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for providing a thermally assisted spin transfer...
- Patent number 9,384,811
- Issue date Jul 5, 2016
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for controlling magnetic properties through ion diffusion in...
- Patent number 9,287,322
- Issue date Mar 15, 2016
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing an engineered magnetic layer includ...
- Patent number 9,236,564
- Issue date Jan 12, 2016
- Samsung Electronics Co., Ltd.
- Matthew J. Carey
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic junctions having insertion layers and magnetic memories us...
- Patent number 9,130,155
- Issue date Sep 8, 2015
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element having perpendicular anisotropy with enhanced effi...
- Patent number 9,082,534
- Issue date Jul 14, 2015
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and system for providing magnetic junctions having engineere...
- Patent number 8,786,039
- Issue date Jul 22, 2014
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTILAYERED VERTICAL SPIN-ORBIT TORQUE DEVICES
- Publication number 20240249759
- Publication date Jul 25, 2024
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20230276714
- Publication date Aug 31, 2023
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE MEMORY ELEMENTS FOR SPIN-TRANFER TORQUE (STT) AND...
- Publication number 20230180627
- Publication date Jun 8, 2023
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIPOLE-COUPLED SPIN-ORBIT TORQUE STRUCTURE
- Publication number 20220068538
- Publication date Mar 3, 2022
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Application
RACE-TRACK MEMORY WITH IMPROVED DOMAIN WALL MOTION CONTROL
- Publication number 20220068338
- Publication date Mar 3, 2022
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A DILUTED FREE LAYER MAGNETIC JUNCT...
- Publication number 20180309049
- Publication date Oct 25, 2018
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC DEVICES INCLUDING MAGNETIC JUNCTIONS HAVING TILTED EASY AX...
- Publication number 20180219152
- Publication date Aug 2, 2018
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS USABLE IN SPIN T...
- Publication number 20180108833
- Publication date Apr 19, 2018
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A DILUTED FREE LAYER MAGNETIC JUNCT...
- Publication number 20180102476
- Publication date Apr 12, 2018
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TORQUE OSCILLATOR BASED ON EASY-CONE ANISOTROPY
- Publication number 20170149387
- Publication date May 25, 2017
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
B2-MTJ DESIGN WITH TEXTURE BLOCKING DECOUPLING LAYER FOR SUB-25 NM...
- Publication number 20170141156
- Publication date May 18, 2017
- Samsung Electronics Co., Ltd.
- Dmytro APALKOV
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR REMOVING BORON FROM MAGNETIC JUNCTIONS USABLE...
- Publication number 20160197270
- Publication date Jul 7, 2016
- Samsung Electronics Co., Ltd.
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING HEUSLE...
- Publication number 20160043301
- Publication date Feb 11, 2016
- Samsung Electronics Co., Ltd.
- William H. Butler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC LAYERS HAVING INSERTION LA...
- Publication number 20150357556
- Publication date Dec 10, 2015
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING MAGNETIC PROPERTIES THROUGH ION DIFFUSION IN...
- Publication number 20150325623
- Publication date Nov 12, 2015
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A THERMALLY ASSISTED SPIN TRANSFER...
- Publication number 20150294703
- Publication date Oct 15, 2015
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING THERMALLY ASSISTED MAGNETIC JUNCTIO...
- Publication number 20150294707
- Publication date Oct 15, 2015
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING AN ENGINEERED MAGNETIC LAYER INCLUD...
- Publication number 20150162378
- Publication date Jun 11, 2015
- Samsung Electronics Co., Ltd.
- Matthew J. Carey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS USING BCC COBALT...
- Publication number 20150041933
- Publication date Feb 12, 2015
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC JUNCTIONS HAVING INSERTION LAYERS AND MAGNETIC MEMORIES US...
- Publication number 20140264671
- Publication date Sep 18, 2014
- Samsung Electronics Co., Ltd.
- Roman Chepulskyy
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING ENGINEERE...
- Publication number 20140175582
- Publication date Jun 26, 2014
- Dmytro Apalkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC ELEMENT HAVING PERPENDICULAR ANISOTROPY WITH ENHANCED EFFI...
- Publication number 20130177781
- Publication date Jul 11, 2013
- Roman Chepulskyy
- B82 - NANO-TECHNOLOGY

Roman Chepulskyy

Person

Patents Grantslast 30 patents

Magnetoresistive memory elements for spin-transfer torque (STT) and...

Dipole-coupled spin-orbit torque structure

Race-track memory with improved domain wall motion control

Method and system for providing a diluted free layer magnetic junct...

Method and system for providing magnetic junctions usable in spin t...

Magnetic devices including magnetic junctions having tilted easy ax...

Method and system for providing a diluted free layer magnetic junct...

Spin-torque oscillator based on easy-cone anisotropy

B2-MTJ design with texture blocking decoupling layer for sub-25 nm...

Method and system for removing boron from magnetic junctions usable...

Method and system for providing magnetic junctions including Heusle...

Method and system for providing thermally assisted magnetic junctio...

Method and system for providing magnetic layers having insertion la...

Method and system for providing a thermally assisted spin transfer...

Method for controlling magnetic properties through ion diffusion in...

Method and system for providing an engineered magnetic layer includ...

Magnetic junctions having insertion layers and magnetic memories us...

Magnetic element having perpendicular anisotropy with enhanced effi...

Method and system for providing magnetic junctions having engineere...

Patents Applicationslast 30 patents

MULTILAYERED VERTICAL SPIN-ORBIT TORQUE DEVICES

SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME

MAGNETORESISTIVE MEMORY ELEMENTS FOR SPIN-TRANFER TORQUE (STT) AND...

DIPOLE-COUPLED SPIN-ORBIT TORQUE STRUCTURE

RACE-TRACK MEMORY WITH IMPROVED DOMAIN WALL MOTION CONTROL

METHOD AND SYSTEM FOR PROVIDING A DILUTED FREE LAYER MAGNETIC JUNCT...

MAGNETIC DEVICES INCLUDING MAGNETIC JUNCTIONS HAVING TILTED EASY AX...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS USABLE IN SPIN T...

METHOD AND SYSTEM FOR PROVIDING A DILUTED FREE LAYER MAGNETIC JUNCT...

SPIN-TORQUE OSCILLATOR BASED ON EASY-CONE ANISOTROPY

B2-MTJ DESIGN WITH TEXTURE BLOCKING DECOUPLING LAYER FOR SUB-25 NM...

METHOD AND SYSTEM FOR REMOVING BORON FROM MAGNETIC JUNCTIONS USABLE...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING HEUSLE...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC LAYERS HAVING INSERTION LA...

METHOD FOR CONTROLLING MAGNETIC PROPERTIES THROUGH ION DIFFUSION IN...

METHOD AND SYSTEM FOR PROVIDING A THERMALLY ASSISTED SPIN TRANSFER...

METHOD AND SYSTEM FOR PROVIDING THERMALLY ASSISTED MAGNETIC JUNCTIO...

METHOD AND SYSTEM FOR PROVIDING AN ENGINEERED MAGNETIC LAYER INCLUD...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS USING BCC COBALT...

MAGNETIC JUNCTIONS HAVING INSERTION LAYERS AND MAGNETIC MEMORIES US...

METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING ENGINEERE...

MAGNETIC ELEMENT HAVING PERPENDICULAR ANISOTROPY WITH ENHANCED EFFI...