Roman Hamerski

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Overland Park, KS, US

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Patents Grantslast 30 patents

Information Patent Grant
Top tri-metal system for silicon power semiconductor devices
- Patent number 8,426,971
- Issue date Apr 23, 2013
- Diodes FabTech, Inc.
- Roman Hamerski
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Power rectifiers and method of making same
- Patent number 7,932,536
- Issue date Apr 26, 2011
- Diodes Incorporated
- Roman Jan Hamerski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High efficiency rectifier
- Patent number 7,847,315
- Issue date Dec 7, 2010
- Diodes Fabtech Inc
- Roman J. Hamerski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-efficiency Schottky rectifier and method of manufacturing same
- Patent number 7,709,864
- Issue date May 4, 2010
- Diodes Fabtech Inc
- Roman Hamerski
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TOP TRI-METAL SYSTEM FOR SILICON POWER SEMICONDUCTOR DEVICES
- Publication number 20120049372
- Publication date Mar 1, 2012
- Roman HAMERSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER RECTIFIERS AND METHOD OF MAKING SAME
- Publication number 20090039384
- Publication date Feb 12, 2009
- Diodes, Inc.
- Roman Jan Hamerski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH EFFICIENCY RECTIFIER
- Publication number 20080217721
- Publication date Sep 11, 2008
- Roman J. Hamerski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-efficiency Schottky rectifier and method of manufacturing same
- Publication number 20070235830
- Publication date Oct 11, 2007
- Roman Hamerski
- H01 - BASIC ELECTRIC ELEMENTS