Ronald Grundbacher

Person

Manhattan Beach, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
High electron mobility transistor (HEMT) structure with refractory...
- Patent number 7,411,226
- Issue date Aug 12, 2008
- Northrop Grumman Corporation
- Yeong-Chang Choug
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully relaxed channel HEMT device
- Patent number 6,710,379
- Issue date Mar 23, 2004
- Northrop Grumman Corporation
- Michael Wojtowicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to separate a metal film from an insulating film in a semico...
- Patent number 6,569,763
- Issue date May 27, 2003
- Northrop Grumman Corporation
- Ronald W. Grundbacher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a large area, high gate current HEMT diode
- Patent number 6,524,899
- Issue date Feb 25, 2003
- TRW Inc.
- Ronald W. Grundbacher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially relaxed channel HEMT device
- Patent number 6,515,316
- Issue date Feb 4, 2003
- TRW Inc.
- Michael Wojtowicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode device
- Patent number 6,452,221
- Issue date Sep 17, 2002
- TRW Inc.
- Richard Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-layer dielectric structure with rounded corners, and circuit...
- Patent number 6,396,679
- Issue date May 28, 2002
- TRW Inc.
- Ronald W. Grundbacher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for determining etch depth
- Patent number 6,383,826
- Issue date May 7, 2002
- TRW Inc.
- Michael E. Barsky
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High electron mobility transistor (HEMT) structure with refractory...
- Publication number 20060244009
- Publication date Nov 2, 2006
- Northrop Grumman Corporation
- Yeong-Chang Choug
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partially relaxed channel HEMT device
- Publication number 20030141519
- Publication date Jul 31, 2003
- TRW Inc.
- Michael Wojtowicz
- H01 - BASIC ELECTRIC ELEMENTS

Ronald Grundbacher

Person

Patents Grantslast 30 patents

High electron mobility transistor (HEMT) structure with refractory...

Fully relaxed channel HEMT device

Method to separate a metal film from an insulating film in a semico...

Process for forming a large area, high gate current HEMT diode

Partially relaxed channel HEMT device

Enhancement mode device

Single-layer dielectric structure with rounded corners, and circuit...

Method for determining etch depth

Patents Applicationslast 30 patents

High electron mobility transistor (HEMT) structure with refractory...

Partially relaxed channel HEMT device