Rong Chen

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Sunnyvale, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Charge storage device, method of making same, method of making an e...
- Patent number 9,368,290
- Issue date Jun 14, 2016
- Intel Corporation
- Donald S. Gardner
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Charge storage device, method of making same, method of making an e...
- Patent number 9,013,861
- Issue date Apr 21, 2015
- Intel Corporation
- Donald S. Gardner
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Patents Applicationslast 30 patents

Information Patent Application
CHARGE STORAGE DEVICE, METHOD OF MAKING SAME, METHOD OF MAKING AN E...
- Publication number 20160268065
- Publication date Sep 15, 2016
- Intel Corporation
- Donald S. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE STORAGE DEVICE, METHOD OF MAKING SAME, METHOD OF MAKING AN E...
- Publication number 20150187515
- Publication date Jul 2, 2015
- Intel Corporation
- Donald S. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE STORAGE DEVICE, METHOD OF MAKING SAME, METHOD OF MAKING AN E...
- Publication number 20130016452
- Publication date Jan 17, 2013
- Intel Corporation
- Donald S. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR TUNABLE ISOTROPIC RECESS ETCHING OF SILICO...
- Publication number 20090032880
- Publication date Feb 5, 2009
- APPLIED MATERIALS, INC.
- Mark Naoshi Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING AND PASSIVATING FOR HIGH ASPECT RATIO FEATURES
- Publication number 20080286978
- Publication date Nov 20, 2008
- Rong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR RECESS ETCHING
- Publication number 20080146034
- Publication date Jun 19, 2008
- Applied Materials, Inc.
- MEIHUA SHEN
- H01 - BASIC ELECTRIC ELEMENTS