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Rowan L. Messham
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Murrysville, PA, US
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last 30 patents
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Patent Grant
Aluminum gallium nitride heterojunction bipolar transistor
Patent number
5,923,058
Issue date
Jul 13, 1999
Northrop Grumman Corporation
Anant K. Agarwal
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Aluminum gallium nitride based heterojunction bipolar transistor
Patent number
5,641,975
Issue date
Jun 24, 1997
Northrop Grumman Corporation
Anant K. Agarwal
H01 - BASIC ELECTRIC ELEMENTS