Roy L. Maddox III

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Boise, ID, US

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Patents Grantslast 30 patents

Information Patent Grant
Method of making semiconductor devices having two-layer gate structure
- Patent number 5,393,683
- Issue date Feb 28, 1995
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single mask process for forming both n-type and p-type gates in a p...
- Patent number 5,278,085
- Issue date Jan 11, 1994
- Micron Semiconductor, Inc.
- Roy L. Maddox
- H01 - BASIC ELECTRIC ELEMENTS