Roza Kotlyar

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Quantum dot devices with side and center screening gates
- Patent number 11,922,274
- Issue date Mar 5, 2024
- Intel Corporation
- Hubert C. George
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum well stacks for quantum dot devices
- Patent number 11,677,017
- Issue date Jun 13, 2023
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of fabricating CMOS FinFETs by selectively etching a straine...
- Patent number 11,581,406
- Issue date Feb 14, 2023
- Daedalus Prime LLC
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having high mobility
- Patent number 11,538,806
- Issue date Dec 27, 2022
- Intel Corporation
- Roza Kotlyar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with high concentration of germanium
- Patent number 11,387,320
- Issue date Jul 12, 2022
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked nanowire transistor structure with different channel geomet...
- Patent number 11,367,722
- Issue date Jun 21, 2022
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device with strained SiGe fin...
- Patent number 11,195,919
- Issue date Dec 7, 2021
- Intel Corporation
- Stephen M Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with strain control
- Patent number 11,183,564
- Issue date Nov 23, 2021
- Intel Corporation
- Nicole K. Thomas
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum well stacks for quantum dot devices
- Patent number 11,158,731
- Issue date Oct 26, 2021
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Hexagonal arrays for quantum dot devices
- Patent number 11,107,891
- Issue date Aug 31, 2021
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Conductive bridge random access memory (CBRAM) devices with low the...
- Patent number 10,868,246
- Issue date Dec 15, 2020
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility strained channels for fin-based NMOS transistors
- Patent number 10,854,752
- Issue date Dec 1, 2020
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked channel structures for MOSFETs
- Patent number 10,790,281
- Issue date Sep 29, 2020
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin strain in quantum dot devices
- Patent number 10,665,770
- Issue date May 26, 2020
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon PMOS with gallium nitride NMOS for voltage regulation
- Patent number 10,600,787
- Issue date Mar 24, 2020
- Intel Corporation
- Sansaptak Dasgupta
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Functional metal oxide based microelectronic devices
- Patent number 10,396,211
- Issue date Aug 27, 2019
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility strained channels for fin-based NMOS transistors
- Patent number 10,153,372
- Issue date Dec 11, 2018
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-tunneling field effect transistor device with pocket
- Patent number 10,128,356
- Issue date Nov 13, 2018
- Intel Corporation
- Uygar E. Avci
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods of forming low band gap source and drain structures in micr...
- Patent number 10,115,822
- Issue date Oct 30, 2018
- Intel Corporation
- Rafael Rios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS FinFET device having strained SiGe fins and a strained Si clad...
- Patent number 10,109,711
- Issue date Oct 23, 2018
- Intel Corporation
- Stephen M Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium tin channel transistors
- Patent number 9,972,686
- Issue date May 15, 2018
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS FinFET device with dual strained cladding layers on relaxed Si...
- Patent number 9,935,107
- Issue date Apr 3, 2018
- Intel Corporation
- Stephen M Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunneling field effect transistors (TFETs) for CMOS architectures a...
- Patent number 9,911,835
- Issue date Mar 6, 2018
- Intel Corporation
- Roza Kotlyar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility strained channels for fin-based transistors
- Patent number 9,893,149
- Issue date Feb 13, 2018
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based quantum well devices
- Patent number 9,876,014
- Issue date Jan 23, 2018
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous pocket for tunneling field effect transistors (TFETs)
- Patent number 9,871,106
- Issue date Jan 16, 2018
- Intel Corporation
- Uygar E. Avci
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical transistor devices for embedded memory and logic technologies
- Patent number 9,871,117
- Issue date Jan 16, 2018
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical nanowire transistor with axially engineered semiconductor...
- Patent number 9,818,864
- Issue date Nov 14, 2017
- Intel Corporation
- Brian S. Doyle
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transistor structure with variable clad/core dimension for stress a...
- Patent number 9,818,870
- Issue date Nov 14, 2017
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar device having uniaxially strained semiconductor body and...
- Patent number 9,680,013
- Issue date Jun 13, 2017
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR LOADING CLASSICAL DATA INTO QUANTUM COMPUTERS
- Publication number 20240354613
- Publication date Oct 24, 2024
- Nicholas P. D. SAWAYA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...
- Publication number 20230170388
- Publication date Jun 1, 2023
- Daedalus Prime LLC
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING HIGH MOBILITY
- Publication number 20230116170
- Publication date Apr 13, 2023
- Intel Corporation
- Roza KOTLYAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL GATE MATERIAL ARRANGEMENTS FOR QUANTUM DOT DEVICES
- Publication number 20220190135
- Publication date Jun 16, 2022
- Roza Kotlyar
- B82 - NANO-TECHNOLOGY
Information Patent Application
CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...
- Publication number 20220059656
- Publication date Feb 24, 2022
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES
- Publication number 20220013658
- Publication date Jan 13, 2022
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TRANSITION METAL-III-NITRIDE ALLOYS FOR ROBUST HIGH PERFORMANCE HEMTS
- Publication number 20210399119
- Publication date Dec 23, 2021
- Intel Corporation
- Suresh VISHWANATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH MOBILITY STRAINED CHANNELS FOR FIN-BASED NMOS TRANSISTORS
- Publication number 20200381549
- Publication date Dec 3, 2020
- Intel Corporation
- STEPHEN M. CEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES
- Publication number 20200350423
- Publication date Nov 5, 2020
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HEXAGONAL ARRAYS FOR QUANTUM DOT DEVICES
- Publication number 20200321436
- Publication date Oct 8, 2020
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Application
STACKED TRANSISTORS WITH DIFFERENT CRYSTAL ORIENTATIONS IN DIFFEREN...
- Publication number 20200295127
- Publication date Sep 17, 2020
- Intel Corporation
- Ehren Mannebach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH HIGH CONCENTRATION OF GERMANIUM
- Publication number 20200144362
- Publication date May 7, 2020
- Intel Corporation
- ANAND S. MURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING HIGH MOBILITY
- Publication number 20200105753
- Publication date Apr 2, 2020
- Intel Corporation
- Roza KOTLYAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED NANOWIRE TRANSISTOR STRUCTURE WITH DIFFERENT CHANNEL GEOMET...
- Publication number 20200098756
- Publication date Mar 26, 2020
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY (CBRAM) DEVICES WITH LOW THE...
- Publication number 20190229264
- Publication date Jul 25, 2019
- Intel Corporation
- Elijah V. KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIERS FOR METAL FILAMENT MEMORY DEVICES
- Publication number 20190181337
- Publication date Jun 13, 2019
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH MOBILITY STRAINED CHANNELS FOR FIN-BASED NMOS TRANSISTORS
- Publication number 20190115466
- Publication date Apr 18, 2019
- Intel Corporation
- STEPHEN M. CEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON PMOS WITH GALLIUM NITRIDE NMOS FOR VOLTAGE REGULATION
- Publication number 20190051650
- Publication date Feb 14, 2019
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRAIN IN QUANTUM DOT DEVICES
- Publication number 20190044050
- Publication date Feb 7, 2019
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
QUANTUM DOT DEVICES WITH STRAIN CONTROL
- Publication number 20190043951
- Publication date Feb 7, 2019
- Intel Corporation
- Nicole K. Thomas
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CMOS FinFET Device Having Strained SiGe Fins and a Strained Si Clad...
- Publication number 20190035893
- Publication date Jan 31, 2019
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CHANNEL STRUCTURES FOR MOSFETS
- Publication number 20180323195
- Publication date Nov 8, 2018
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUNCTIONAL METAL OXIDE BASED MICROELECTRONIC DEVICES
- Publication number 20180226509
- Publication date Aug 9, 2018
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH HIGH CONCENTRATION OF BORON DOPED GERMANIUM
- Publication number 20170221724
- Publication date Aug 3, 2017
- Intel Corporation
- ANAND S. MURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNELING FIELD EFFECT TRANSISTORS (TFETS) FOR CMOS ARCHITECTURES A...
- Publication number 20170133493
- Publication date May 11, 2017
- Intel Corporation
- Roza Kotlyar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM TIN CHANNEL TRANSISTORS
- Publication number 20170125527
- Publication date May 4, 2017
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TUNNELING FIELD EFFECT TRANSISTOR DEVICE WITH POCKET
- Publication number 20170054006
- Publication date Feb 23, 2017
- Intel Corporation
- Uygar E. AVCI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GERMANIUM-BASED QUANTUM WELL DEVICES
- Publication number 20170012116
- Publication date Jan 12, 2017
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH MOBILITY STRAINED CHANNELS FOR FIN-BASED NMOS TRANSISTORS
- Publication number 20160351701
- Publication date Dec 1, 2016
- Intel Corporation
- STEPHEN M. CEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNELING FIELD EFFECT TRANSISTORS (TFETS) FOR CMOS ARCHITECTURES A...
- Publication number 20160322480
- Publication date Nov 3, 2016
- Roza Kotlyar
- H01 - BASIC ELECTRIC ELEMENTS

Roza Kotlyar

Person

Patents Grantslast 30 patents

Quantum dot devices with side and center screening gates

Quantum well stacks for quantum dot devices

Method of fabricating CMOS FinFETs by selectively etching a straine...

Gate-all-around integrated circuit structures having high mobility

Transistors with high concentration of germanium

Stacked nanowire transistor structure with different channel geomet...

Method of fabricating a semiconductor device with strained SiGe fin...

Quantum dot devices with strain control

Quantum well stacks for quantum dot devices

Hexagonal arrays for quantum dot devices

Conductive bridge random access memory (CBRAM) devices with low the...

High mobility strained channels for fin-based NMOS transistors

Stacked channel structures for MOSFETs

Fin strain in quantum dot devices

Silicon PMOS with gallium nitride NMOS for voltage regulation

Functional metal oxide based microelectronic devices

High mobility strained channels for fin-based NMOS transistors

P-tunneling field effect transistor device with pocket

Methods of forming low band gap source and drain structures in micr...

CMOS FinFET device having strained SiGe fins and a strained Si clad...

Germanium tin channel transistors

CMOS FinFET device with dual strained cladding layers on relaxed Si...

Tunneling field effect transistors (TFETs) for CMOS architectures a...

High mobility strained channels for fin-based transistors

Germanium-based quantum well devices

Heterogeneous pocket for tunneling field effect transistors (TFETs)

Vertical transistor devices for embedded memory and logic technologies

Vertical nanowire transistor with axially engineered semiconductor...

Transistor structure with variable clad/core dimension for stress a...

Non-planar device having uniaxially strained semiconductor body and...

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR LOADING CLASSICAL DATA INTO QUANTUM COMPUTERS

CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING HIGH MOBILITY

LATERAL GATE MATERIAL ARRANGEMENTS FOR QUANTUM DOT DEVICES

CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...

QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES

TRANSITION METAL-III-NITRIDE ALLOYS FOR ROBUST HIGH PERFORMANCE HEMTS

HIGH MOBILITY STRAINED CHANNELS FOR FIN-BASED NMOS TRANSISTORS

QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES

HEXAGONAL ARRAYS FOR QUANTUM DOT DEVICES

STACKED TRANSISTORS WITH DIFFERENT CRYSTAL ORIENTATIONS IN DIFFEREN...

TRANSISTORS WITH HIGH CONCENTRATION OF GERMANIUM

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING HIGH MOBILITY

STACKED NANOWIRE TRANSISTOR STRUCTURE WITH DIFFERENT CHANNEL GEOMET...

CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY (CBRAM) DEVICES WITH LOW THE...

BARRIERS FOR METAL FILAMENT MEMORY DEVICES

HIGH MOBILITY STRAINED CHANNELS FOR FIN-BASED NMOS TRANSISTORS

SILICON PMOS WITH GALLIUM NITRIDE NMOS FOR VOLTAGE REGULATION

FIN STRAIN IN QUANTUM DOT DEVICES

QUANTUM DOT DEVICES WITH STRAIN CONTROL

CMOS FinFET Device Having Strained SiGe Fins and a Strained Si Clad...

STACKED CHANNEL STRUCTURES FOR MOSFETS

FUNCTIONAL METAL OXIDE BASED MICROELECTRONIC DEVICES

TRANSISTORS WITH HIGH CONCENTRATION OF BORON DOPED GERMANIUM

TUNNELING FIELD EFFECT TRANSISTORS (TFETS) FOR CMOS ARCHITECTURES A...

GERMANIUM TIN CHANNEL TRANSISTORS

P-TUNNELING FIELD EFFECT TRANSISTOR DEVICE WITH POCKET

GERMANIUM-BASED QUANTUM WELL DEVICES

HIGH MOBILITY STRAINED CHANNELS FOR FIN-BASED NMOS TRANSISTORS

TUNNELING FIELD EFFECT TRANSISTORS (TFETS) FOR CMOS ARCHITECTURES A...