Ru-Shang Hsiao

Person

Jhubei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Structure for metal gate electrode and method of fabrication
- Patent number 11,961,891
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for semiconductor interconnect
- Patent number 11,961,731
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- B08 - CLEANING
Information Patent Grant
Metal gate structures and methods of fabricating the same in field-...
- Patent number 11,949,000
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of long gate devices
- Patent number 11,855,175
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Input/output devices
- Patent number 11,699,702
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor structure including plasma clean...
- Patent number 11,658,230
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device with gate
- Patent number 11,600,727
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit structure with gate configuration
- Patent number 11,588,038
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing a gate electrode having metal layers with...
- Patent number 11,502,185
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structures and methods of fabricating the same in field-...
- Patent number 11,476,351
- Issue date Oct 18, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET MOS capacitor
- Patent number 11,469,335
- Issue date Oct 11, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of semiconductor device and method of forming same
- Patent number 11,450,758
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of long gate devices
- Patent number 11,444,175
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,437,495
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- I-Chih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for metal gate electrode and method of fabrication
- Patent number 11,282,934
- Issue date Mar 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,271,102
- Issue date Mar 8, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for semiconductor interconnect
- Patent number 11,232,943
- Issue date Jan 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- B08 - CLEANING
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,903,336
- Issue date Jan 26, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- I-Chih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming semiconductor structure
- Patent number 10,847,636
- Issue date Nov 24, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device with gate
- Patent number 10,680,103
- Issue date Jun 9, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,651,041
- Issue date May 12, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 10,510,877
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,312,092
- Issue date Jun 4, 2019
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device with P/N stacked layers
- Patent number 10,297,691
- Issue date May 21, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Pin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistor structure and manufacturing method...
- Patent number 10,153,278
- Issue date Dec 11, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Lin Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air-gap scheme for BEOL process
- Patent number 10,062,603
- Issue date Aug 28, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 10,056,455
- Issue date Aug 21, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ting-Chun Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sandwich EPI channel for device enhancement
- Patent number 10,008,501
- Issue date Jun 26, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices, FinFET devices and methods of forming the same
- Patent number 9,997,633
- Issue date Jun 12, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures
- Patent number 9,985,122
- Issue date May 29, 2018
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET WITH LONG CHANNEL LENGTH STRUCTURE
- Publication number 20240072158
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR INCREASED CAPACITANCE
- Publication number 20230411537
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- Cheng-You Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION
- Publication number 20230387230
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET MOS CAPACITOR
- Publication number 20230378376
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INPUT/OUTPUT DEVICES
- Publication number 20230352483
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH RESISTOR AND CAPACITOR
- Publication number 20230335488
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- RU-SHANG HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR IMAGE-SENSING STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230299117
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- SUNG-HSIN YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR INCREASED CAPACITANCE
- Publication number 20230299213
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-You Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE
- Publication number 20230207693
- Publication date Jun 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Chi JENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT STRUCTURE WITH GATE CONFIGURATION
- Publication number 20230207650
- Publication date Jun 29, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of Multiple Transistors Having Fin and Mesa Structures
- Publication number 20230154922
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process Loading Remediation
- Publication number 20230145694
- Publication date May 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ling Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230067587
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20220406917
- Publication date Dec 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Shian CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET MOS CAPACITOR
- Publication number 20220376121
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE
- Publication number 20220376045
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220376081
- Publication date Nov 24, 2022
- Talwan Semiconductor Manufacturing Co., Ltd
- I-Chih CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Structures And Methods Of Fabricating The Same In Field-...
- Publication number 20220367688
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20220367671
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of Long Gate Devices
- Publication number 20220359719
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICES
- Publication number 20220359304
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type FinFET as an Radio-Frequency Device and Method Forming Same
- Publication number 20220359728
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET MOS CAPACITOR
- Publication number 20220238729
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220238521
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20220223590
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsi-Jung WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Structure for Metal Gate Electrode and Method of Fabrication
- Publication number 20220216317
- Publication date Jul 7, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for Semiconductor Interconnect
- Publication number 20220148977
- Publication date May 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of Long Gate Devices
- Publication number 20220068719
- Publication date Mar 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Device
- Publication number 20220068721
- Publication date Mar 3, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20210391441
- Publication date Dec 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS

Ru-Shang Hsiao

Person

Patents Grantslast 30 patents

Structure for metal gate electrode and method of fabrication

Method and structure for semiconductor interconnect

Metal gate structures and methods of fabricating the same in field-...

Fabrication of long gate devices

Input/output devices

Method for forming a semiconductor structure including plasma clean...

Method of forming semiconductor device with gate

Circuit structure with gate configuration

Methods of manufacturing a gate electrode having metal layers with...

Metal gate structures and methods of fabricating the same in field-...

FinFET MOS capacitor

Gate structure of semiconductor device and method of forming same

Fabrication of long gate devices

Semiconductor device and method of manufacturing the same

Structure for metal gate electrode and method of fabrication

Semiconductor structure

Method and structure for semiconductor interconnect

Semiconductor device and method of manufacturing the same

Methods for forming semiconductor structure

Method of forming semiconductor device with gate

Semiconductor structure and manufacturing method thereof

Semiconductor structure

Semiconductor structure and manufacturing method thereof

Method for forming semiconductor device with P/N stacked layers

Fin-type field effect transistor structure and manufacturing method...

Air-gap scheme for BEOL process

Semiconductor device and method of fabricating the same

Sandwich EPI channel for device enhancement

Semiconductor devices, FinFET devices and methods of forming the same

Semiconductor structures

Patents Applicationslast 30 patents

FINFET WITH LONG CHANNEL LENGTH STRUCTURE

SEMICONDUCTOR DEVICES AND METHODS FOR INCREASED CAPACITANCE

NOVEL STRUCTURE FOR METAL GATE ELECTRODE AND METHOD OF FABRICATION

FINFET MOS CAPACITOR

INPUT/OUTPUT DEVICES

SEMICONDUCTOR STRUCTURE WITH RESISTOR AND CAPACITOR

SEMICONDUCTOR IMAGE-SENSING STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICES AND METHODS FOR INCREASED CAPACITANCE

SEMICONDUCTOR DEVICE WITH GATE

CIRCUIT STRUCTURE WITH GATE CONFIGURATION

Integration of Multiple Transistors Having Fin and Mesa Structures

Process Loading Remediation

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES

FINFET MOS CAPACITOR

HIGH VOLTAGE DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Metal Gate Structures And Methods Of Fabricating The Same In Field-...

GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

Fabrication of Long Gate Devices

HIGH VOLTAGE DEVICES

P-Type FinFET as an Radio-Frequency Device and Method Forming Same

FINFET MOS CAPACITOR

Semiconductor Device and Method

SEMICONDUCTOR DEVICE AND METHOD

Novel Structure for Metal Gate Electrode and Method of Fabrication

Method and Structure for Semiconductor Interconnect

Fabrication of Long Gate Devices

High Voltage Device

GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME