Ru-Ying Tong

Person

Los Gatos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 12,082,509
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Free layer structure in magnetic random access memory (MRAM) for Mo...
- Patent number 12,027,191
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 11,956,971
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
Information Patent Grant
Reduction of capping layer resistance area product for magnetic dev...
- Patent number 11,930,716
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Minimal thickness synthetic antiferromagnetic (SAF) structure with...
- Patent number 11,930,717
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,849,646
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Protective passivation layer for magnetic tunnel junctions
- Patent number 11,758,820
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 11,696,511
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic element with perpendicular magnetic anisotropy (PMA) and i...
- Patent number 11,683,994
- Issue date Jun 20, 2023
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Grant
Seed layer for multilayer magnetic materials
- Patent number 11,672,182
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 11,569,441
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully compensated synthetic ferromagnet for spintronics applications
- Patent number 11,563,170
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,417,835
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon oxynitride based encapsulation layer for magnetic tunnel ju...
- Patent number 11,411,174
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High thermal stability by doping of oxide capping layer for spin to...
- Patent number 11,316,098
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined physical and chemical etch to reduce magnetic tunnel junct...
- Patent number 11,316,103
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dongna Shen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method to integrate MRAM devices to the interconnects of 30nm and b...
- Patent number 11,289,645
- Issue date Mar 29, 2022
- Headway Technologies, Inc.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic element with perpendicular magnetic anisotropy (PMA) and i...
- Patent number 11,264,566
- Issue date Mar 1, 2022
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimal thickness, low switching voltage magnetic free layers using...
- Patent number 11,264,560
- Issue date Mar 1, 2022
- Headway Technologies, Inc.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seed layer for multilayer magnetic materials
- Patent number 11,107,977
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Free layer structure in magnetic random access memory (MRAM) for Mo...
- Patent number 11,087,810
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Reduction of capping layer resistance area product for magnetic dev...
- Patent number 11,031,547
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective passivation layer for magnetic tunnel junctions
- Patent number 11,024,798
- Issue date Jun 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 10,957,851
- Issue date Mar 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimal thickness synthetic antiferromagnetic (SAF) structure with...
- Patent number 10,868,235
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 10,797,232
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 10,797,225
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 10,784,310
- Issue date Sep 22, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride capping layer for spin torque transfer (STT)-magnetoresisti...
- Patent number 10,665,773
- Issue date May 26, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,658,577
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS
- Publication number 20230371395
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20220384716
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON OXYNITRIDE BASED ENCAPSULATION LAYER FOR MAGNETIC TUNNEL JU...
- Publication number 20220384718
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20220246841
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...
- Publication number 20220149272
- Publication date May 12, 2022
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Application
Seed Layer for Multilayer Magnetic Materials
- Publication number 20210391533
- Publication date Dec 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
Novel Free Layer Structure in Magnetic Random Access Memory (MRAM)...
- Publication number 20210375343
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Reduction of Capping Layer Resistance Area Product for Magnetic Dev...
- Publication number 20210367146
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
Protective Passivation Layer for Magnetic Tunnel Junctions
- Publication number 20210293912
- Publication date Sep 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- G01 - MEASURING TESTING
Information Patent Application
Reduction of Barrier Resistance X Area (RA) Product and Protection...
- Publication number 20210234092
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G01 - MEASURING TESTING
Information Patent Application
Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure With...
- Publication number 20210210674
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Robert Beach
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20210210680
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Magnetic Tunnel Junction (DMTJ) Stack Design
- Publication number 20210020830
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20210020831
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20210013260
- Publication date Jan 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using...
- Publication number 20200403143
- Publication date Dec 24, 2020
- HEADWAY TECHNOLOGIES, INC.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...
- Publication number 20200403149
- Publication date Dec 24, 2020
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200279995
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20200279993
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Free Layer Structure in Magnetic Random Access Memory (MRAM)...
- Publication number 20200243125
- Publication date Jul 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hideaki Fukuzawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method to Integrate MRAM Devices to the Interconnects of 30nm and B...
- Publication number 20200212297
- Publication date Jul 2, 2020
- HEADWAY TECHNOLOGIES, INC.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20200152698
- Publication date May 14, 2020
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
- Publication number 20200144487
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
COMBINED PHYSICAL AND CHEMICAL ETCH TO REDUCE MAGNETIC TUNNEL JUNCT...
- Publication number 20200144492
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dongna Shen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20200144494
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20200144486
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20200136025
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHYSICAL CLEANING WITH IN-SITU DIELECTRIC ENCAPSULATION LAYER FOR S...
- Publication number 20200127195
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Ju...
- Publication number 20200127192
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Seed Layer for Multilayer Magnetic Materials
- Publication number 20200091417
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS

Ru-Ying Tong

Person

Patents Grantslast 30 patents

Dual magnetic tunnel junction (DMTJ) stack design

Free layer structure in magnetic random access memory (MRAM) for Mo...

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Reduction of capping layer resistance area product for magnetic dev...

Minimal thickness synthetic antiferromagnetic (SAF) structure with...

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Protective passivation layer for magnetic tunnel junctions

Low resistance MgO capping layer for perpendicularly magnetized mag...

Magnetic element with perpendicular magnetic anisotropy (PMA) and i...

Seed layer for multilayer magnetic materials

Maintaining coercive field after high temperature anneal for magnet...

Fully compensated synthetic ferromagnet for spintronics applications

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Silicon oxynitride based encapsulation layer for magnetic tunnel ju...

High thermal stability by doping of oxide capping layer for spin to...

Combined physical and chemical etch to reduce magnetic tunnel junct...

Method to integrate MRAM devices to the interconnects of 30nm and b...

Magnetic element with perpendicular magnetic anisotropy (PMA) and i...

Minimal thickness, low switching voltage magnetic free layers using...

Seed layer for multilayer magnetic materials

Free layer structure in magnetic random access memory (MRAM) for Mo...

Reduction of capping layer resistance area product for magnetic dev...

Protective passivation layer for magnetic tunnel junctions

Magnetic layer for magnetic random access memory (MRAM) by moment e...

Minimal thickness synthetic antiferromagnetic (SAF) structure with...

Low resistance MgO capping layer for perpendicularly magnetized mag...

Dual magnetic tunnel junction (DMTJ) stack design

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Nitride capping layer for spin torque transfer (STT)-magnetoresisti...

Maintaining coercive field after high temperature anneal for magnet...

Patents Applicationslast 30 patents

PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

SILICON OXYNITRIDE BASED ENCAPSULATION LAYER FOR MAGNETIC TUNNEL JU...

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...

Seed Layer for Multilayer Magnetic Materials

Novel Free Layer Structure in Magnetic Random Access Memory (MRAM)...

Reduction of Capping Layer Resistance Area Product for Magnetic Dev...

Protective Passivation Layer for Magnetic Tunnel Junctions

Reduction of Barrier Resistance X Area (RA) Product and Protection...

Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure With...

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

Dual Magnetic Tunnel Junction (DMTJ) Stack Design

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using...

Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

Novel Free Layer Structure in Magnetic Random Access Memory (MRAM)...

Method to Integrate MRAM Devices to the Interconnects of 30nm and B...

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Fully Compensated Synthetic Ferromagnet for Spintronics Applications

COMBINED PHYSICAL AND CHEMICAL ETCH TO REDUCE MAGNETIC TUNNEL JUNCT...

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

PHYSICAL CLEANING WITH IN-SITU DIELECTRIC ENCAPSULATION LAYER FOR S...

Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Ju...

Seed Layer for Multilayer Magnetic Materials