Rudolf Elpelt

Person

Erlangen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including current spread region
- Patent number 12,176,396
- Issue date Dec 24, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with shielding structure
- Patent number 12,119,377
- Issue date Oct 15, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a silicon carbide device with a trench gate
- Patent number 11,888,032
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with integrated Schottky diode
- Patent number 11,757,031
- Issue date Sep 12, 2023
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate structure and method of man...
- Patent number 11,735,633
- Issue date Aug 22, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,626,477
- Issue date Apr 11, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate
- Patent number 11,552,173
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including current spread region
- Patent number 11,552,170
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with channel regions extending along at least one of the...
- Patent number 11,462,611
- Issue date Oct 4, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component
- Patent number 11,437,470
- Issue date Sep 6, 2022
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with Schottky contact
- Patent number 11,380,756
- Issue date Jul 5, 2022
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielding structure for SiC devices
- Patent number 11,367,775
- Issue date Jun 21, 2022
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component with edge termination struc...
- Patent number 11,145,755
- Issue date Oct 12, 2021
- Infineon Technologies AG
- Larissa Wehrhahn-Kilian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,101,343
- Issue date Aug 24, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with an implantation tail compensation region
- Patent number 10,957,768
- Issue date Mar 23, 2021
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Particle irradiation apparatus, beam modifier device, and semicondu...
- Patent number 10,915,029
- Issue date Feb 9, 2021
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device and methods of manufacturing thereof
- Patent number 10,896,952
- Issue date Jan 19, 2021
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with junction termination zone
- Patent number 10,861,964
- Issue date Dec 8, 2020
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a super junction structure in a SiC...
- Patent number 10,615,254
- Issue date Apr 7, 2020
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC trench transistor device and methods of manufacturing thereof
- Patent number 10,586,845
- Issue date Mar 10, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with buried doped region
- Patent number 10,580,878
- Issue date Mar 3, 2020
- Infineon Technologies AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with termination structure including field zon...
- Patent number 10,541,325
- Issue date Jan 21, 2020
- Infineon Technologies AG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Particle irradiation apparatus, beam modifier device, and semicondu...
- Patent number 10,120,287
- Issue date Nov 6, 2018
- Infineon Technologies AG
- Roland Rupp
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Semiconductor device including a super junction structure in a SiC...
- Patent number 10,115,791
- Issue date Oct 30, 2018
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,056,365
- Issue date Aug 21, 2018
- Infineon Technologies Austria AG
- Daniel Kueck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and a method for forming a silicon carbide d...
- Patent number 9,496,346
- Issue date Nov 15, 2016
- Infineon Technology AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and a method for manufacturing a silicon car...
- Patent number 9,412,808
- Issue date Aug 9, 2016
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and a method for forming a silicon carbide d...
- Patent number 9,257,511
- Issue date Feb 9, 2016
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and a method for manufacturing a silicon car...
- Patent number 9,035,322
- Issue date May 19, 2015
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,994,078
- Issue date Mar 31, 2015
- Infineon Technologies Austria AG
- Daniel Kueck
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE
- Publication number 20250063775
- Publication date Feb 20, 2025
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Field Termination Structure and a Cha...
- Publication number 20240194778
- Publication date Jun 13, 2024
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE
- Publication number 20240136406
- Publication date Apr 25, 2024
- INFINEON TECHNOLOGIES AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
- Publication number 20240096988
- Publication date Mar 21, 2024
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
- Publication number 20240072122
- Publication date Feb 29, 2024
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20230317797
- Publication date Oct 5, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A TRENCH GATE STRUCTURE
- Publication number 20230163167
- Publication date May 25, 2023
- INFINEON TECHNOLOGIES AG
- Michael HELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE
- Publication number 20230094032
- Publication date Mar 30, 2023
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION
- Publication number 20230101290
- Publication date Mar 30, 2023
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shielding Structure for SiC Devices
- Publication number 20220199765
- Publication date Jun 23, 2022
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Devices with Shielding Structure
- Publication number 20220199766
- Publication date Jun 23, 2022
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR WITH INTEGRATED SCHOTTKY DIODE
- Publication number 20220059687
- Publication date Feb 24, 2022
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20210343835
- Publication date Nov 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Trench Gate Structure and Method of Man...
- Publication number 20210134960
- Publication date May 6, 2021
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device with Channel Regions Extending Along at least one of the...
- Publication number 20210118986
- Publication date Apr 22, 2021
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with an Implantation Tail Compensation Region
- Publication number 20210104605
- Publication date Apr 8, 2021
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION
- Publication number 20210091184
- Publication date Mar 25, 2021
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Trench Gate
- Publication number 20210050421
- Publication date Feb 18, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH SCHOTTKY CONTACT
- Publication number 20200219972
- Publication date Jul 9, 2020
- INFINEON TECHNOLOGIES AG
- Caspar LEENDERTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device and Methods of Manufacturing Thereof
- Publication number 20200194544
- Publication date Jun 18, 2020
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device with Buried Doped Region
- Publication number 20200058760
- Publication date Feb 20, 2020
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20190355815
- Publication date Nov 21, 2019
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20190341447
- Publication date Nov 7, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component with Edge Termination Struc...
- Publication number 20190165159
- Publication date May 30, 2019
- Larissa Wehrhahn-Kilian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Termination Structure Including Field Zon...
- Publication number 20190131447
- Publication date May 2, 2019
- INFINEON TECHNOLOGIES AG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Junction Termination Zone
- Publication number 20190131446
- Publication date May 2, 2019
- INFINEON TECHNOLOGIES AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including a Super Junction Structure in a SiC...
- Publication number 20190067416
- Publication date Feb 28, 2019
- INFINEON TECHNOLOGIES AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTICLE IRRADIATION APPARATUS, BEAM MODIFIER DEVICE, AND SEMICONDU...
- Publication number 20190049850
- Publication date Feb 14, 2019
- INFINEON TECHNOLOGIES AG
- Roland RUPP
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Semiconductor Device Including a Super Junction Structure in a SiC...
- Publication number 20180019304
- Publication date Jan 18, 2018
- INFINEON TECHNOLOGIES AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTICLE IRRADIATION APPARATUS, BEAM MODIFIER DEVICE, AND SEMICONDU...
- Publication number 20170059997
- Publication date Mar 2, 2017
- INFINEON TECHNOLOGIES AG
- Roland RUPP
- H01 - BASIC ELECTRIC ELEMENTS

Rudolf Elpelt

Person

Patents Grantslast 30 patents

Semiconductor device including current spread region

SiC devices with shielding structure

Method of producing a silicon carbide device with a trench gate

Power transistor with integrated Schottky diode

Silicon carbide device with trench gate structure and method of man...

Silicon carbide field-effect transistor including shielding areas

Silicon carbide device with trench gate

Semiconductor device including current spread region

SiC device with channel regions extending along at least one of the...

Silicon carbide semiconductor component

Silicon carbide device with Schottky contact

Shielding structure for SiC devices

Silicon carbide semiconductor component with edge termination struc...

Silicon carbide field-effect transistor including shielding areas

Silicon carbide device with an implantation tail compensation region

Particle irradiation apparatus, beam modifier device, and semicondu...

SiC device and methods of manufacturing thereof

Semiconductor device with junction termination zone

Semiconductor device including a super junction structure in a SiC...

SiC trench transistor device and methods of manufacturing thereof

SiC device with buried doped region

Semiconductor device with termination structure including field zon...

Particle irradiation apparatus, beam modifier device, and semicondu...

Semiconductor device including a super junction structure in a SiC...

Semiconductor device

Silicon carbide device and a method for forming a silicon carbide d...

Silicon carbide device and a method for manufacturing a silicon car...

Silicon carbide device and a method for forming a silicon carbide d...

Silicon carbide device and a method for manufacturing a silicon car...

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE

Semiconductor Device Having a Field Termination Structure and a Cha...

SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...

WIDE BAND GAP SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SEMICONDUCTOR DEVICE INCLUDING A TRENCH GATE STRUCTURE

METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE

SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION

Shielding Structure for SiC Devices

SiC Devices with Shielding Structure

POWER TRANSISTOR WITH INTEGRATED SCHOTTKY DIODE

Silicon Carbide Semiconductor Component

Silicon Carbide Device with Trench Gate Structure and Method of Man...

SiC Device with Channel Regions Extending Along at least one of the...

Silicon Carbide Device with an Implantation Tail Compensation Region

SEMICONDUCTOR DEVICE INCLUDING CURRENT SPREAD REGION

Silicon Carbide Device with Trench Gate

SILICON CARBIDE DEVICE WITH SCHOTTKY CONTACT

SiC Device and Methods of Manufacturing Thereof

SiC Device with Buried Doped Region

Silicon Carbide Semiconductor Component

Silicon Carbide Semiconductor Component

Silicon Carbide Semiconductor Component with Edge Termination Struc...

Semiconductor Device with Termination Structure Including Field Zon...

Semiconductor Device with Junction Termination Zone

Semiconductor Device Including a Super Junction Structure in a SiC...

PARTICLE IRRADIATION APPARATUS, BEAM MODIFIER DEVICE, AND SEMICONDU...

Semiconductor Device Including a Super Junction Structure in a SiC...

PARTICLE IRRADIATION APPARATUS, BEAM MODIFIER DEVICE, AND SEMICONDU...