Rueijer Lin

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Different via configurations for different via interface requirements
- Patent number 12,142,565
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Che Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure having a carbon-containing barrier layer
- Patent number 11,908,697
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical interconnect features and methods of forming
- Patent number 11,855,154
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different via configurations for different via interface requirements
- Patent number 11,532,561
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Che Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure having a carbon-containing barrier layer
- Patent number 11,527,411
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FINFET) device stru...
- Patent number 11,271,112
- Issue date Mar 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical interconnect features and methods of forming
- Patent number 11,107,896
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure having a carbon-containing barrier layer
- Patent number 11,062,909
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Company
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an interconnect structure having a carbon-contain...
- Patent number 10,867,800
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure with insulating structure and method for manufacturi...
- Patent number 10,840,105
- Issue date Nov 17, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pre-clean for contacts
- Patent number 10,714,329
- Issue date Jul 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure having a carbon-containing barrier layer
- Patent number 10,529,575
- Issue date Jan 7, 2020
- Taiwan Semiconductor Manufacturing Company
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device structure with conducti...
- Patent number 10,505,045
- Issue date Dec 10, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an interconnect structure
- Patent number 10,312,098
- Issue date Jun 4, 2019
- Taiwan Semiconductor Manufacturing Company
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure including a conductive feature and a barrier...
- Patent number 10,163,644
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self-alignment contact
- Patent number 10,163,719
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Ping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 10,050,116
- Issue date Aug 14, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiao-Ping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device structure
- Patent number 9,991,125
- Issue date Jun 5, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 9,818,834
- Issue date Nov 14, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Ping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 9,601,430
- Issue date Mar 21, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-controlled formation of TiN hard mask
- Patent number 9,218,970
- Issue date Dec 22, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rueijer Lin
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Stress-controlled formation of tin hard mask
- Patent number 8,975,187
- Issue date Mar 10, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rueijer Lin
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
DIFFERENT VIA CONFIGURATIONS FOR DIFFERENT VIA INTERFACE REQUIREMENTS
- Publication number 20230343712
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Shih-Che Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure Having a Carbon-Containing Barrier Layer
- Publication number 20230107176
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Different Via Configurations for Different Via Interface Requirements
- Publication number 20220359399
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Shih-Che Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...
- Publication number 20220271164
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Hsun WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL INTERCONNECT FEATURES AND METHODS OF FORMING
- Publication number 20210367043
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure Having a Carbon-Containing Barrier Layer
- Publication number 20210343535
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Different Via Configurations for Different Via Interface Requirements
- Publication number 20210098376
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Shih-Che Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure Having a Carbon-Containing Barrier Layer
- Publication number 20200388499
- Publication date Dec 10, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pre-Clean for Contacts
- Publication number 20200343087
- Publication date Oct 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Ting LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL INTERCONNECT FEATURES AND METHODS OF FORMING
- Publication number 20200176574
- Publication date Jun 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure Having a Carbon-Containing Barrier Layer
- Publication number 20200144065
- Publication date May 7, 2020
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-CLEAN FOR CONTACTS
- Publication number 20200105519
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Ting LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...
- Publication number 20200058794
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Hsun WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure and Method of Forming the Same
- Publication number 20190304792
- Publication date Oct 3, 2019
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH CONDUCTI...
- Publication number 20190165176
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Hsun WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure and Method of Forming the Same
- Publication number 20180337056
- Publication date Nov 22, 2018
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Structure and Method for Forming the Same
- Publication number 20180040705
- Publication date Feb 8, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Ping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20170200800
- Publication date Jul 13, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiao-Ping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20170200612
- Publication date Jul 13, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Rueijer LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Self-Alignment Contact
- Publication number 20170170292
- Publication date Jun 15, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Ping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE WITH INSULATING STRUCTURE AND METHOD FOR MANUFACTURI...
- Publication number 20160365343
- Publication date Dec 15, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Yu-Hung LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20160099216
- Publication date Apr 7, 2016
- Taiwan Semiconductor Manufacturing Co., LTD
- Rueijer LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure and Method of Forming the Same
- Publication number 20150228605
- Publication date Aug 13, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rueijer Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-CONTROLLED FORMATION OF TiN HARD MASK
- Publication number 20150187579
- Publication date Jul 2, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Rueijer LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stress-Controlled Formation of Tin Hard Mask
- Publication number 20140273470
- Publication date Sep 18, 2014
- Rueijer Lin
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
MEMS DEVICE STRUCTURE WITH A CAPPING STRUCTURE
- Publication number 20140264475
- Publication date Sep 18, 2014
- Rueijer Lin
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Rueijer Lin

Person

Patents Grantslast 30 patents

Different via configurations for different via interface requirements

Interconnect structure having a carbon-containing barrier layer

Vertical interconnect features and methods of forming

Different via configurations for different via interface requirements

Interconnect structure having a carbon-containing barrier layer

Method for forming fin field effect transistor (FINFET) device stru...

Vertical interconnect features and methods of forming

Interconnect structure having a carbon-containing barrier layer

Method of forming an interconnect structure having a carbon-contain...

Gate structure with insulating structure and method for manufacturi...

Pre-clean for contacts

Interconnect structure having a carbon-containing barrier layer

Fin field effect transistor (FinFET) device structure with conducti...

Method of forming an interconnect structure

Interconnect structure including a conductive feature and a barrier...

Method of forming self-alignment contact

Semiconductor device structure and method for forming the same

Method for forming semiconductor device structure

Semiconductor device structure and method for forming the same

Semiconductor device structure and method for forming the same

Stress-controlled formation of TiN hard mask

Stress-controlled formation of tin hard mask

Patents Applicationslast 30 patents

DIFFERENT VIA CONFIGURATIONS FOR DIFFERENT VIA INTERFACE REQUIREMENTS

Interconnect Structure Having a Carbon-Containing Barrier Layer

Different Via Configurations for Different Via Interface Requirements

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...

VERTICAL INTERCONNECT FEATURES AND METHODS OF FORMING

Interconnect Structure Having a Carbon-Containing Barrier Layer

Different Via Configurations for Different Via Interface Requirements

Interconnect Structure Having a Carbon-Containing Barrier Layer

Pre-Clean for Contacts

VERTICAL INTERCONNECT FEATURES AND METHODS OF FORMING

Interconnect Structure Having a Carbon-Containing Barrier Layer

PRE-CLEAN FOR CONTACTS

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...

Interconnect Structure and Method of Forming the Same

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH CONDUCTI...

Interconnect Structure and Method of Forming the Same

Semiconductor Device Structure and Method for Forming the Same

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE

Method of Forming Self-Alignment Contact

GATE STRUCTURE WITH INSULATING STRUCTURE AND METHOD FOR MANUFACTURI...

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Interconnect Structure and Method of Forming the Same

STRESS-CONTROLLED FORMATION OF TiN HARD MASK

Stress-Controlled Formation of Tin Hard Mask

MEMS DEVICE STRUCTURE WITH A CAPPING STRUCTURE