Ruey-Hsin Liou

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Schottky diode having a shallow trench contact structure for preven...
- Patent number 6,855,999
- Issue date Feb 15, 2005
- Taiwan Semiconductor Manufacturing Co.
- Jei-Fung Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench contact structure to solve the problem of schottky d...
- Patent number 6,455,403
- Issue date Sep 24, 2002
- Taiwan Semiconductor Manufacturing Company
- Jei-Fung Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making improved polysilicon emitters for bipolar transis...
- Patent number 6,271,068
- Issue date Aug 7, 2001
- Taiwan Semiconductor Manufacturing Company
- Yung-Lung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a HVNMOS with an N+ buried layer combined...
- Patent number 6,265,752
- Issue date Jul 24, 2001
- Taiwan Semiconductor Manufacturing, Co., Inc.
- Kou-Chio Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of polysilicon field plates to improve high voltage bipolar dev...
- Patent number 6,242,313
- Issue date Jun 5, 2001
- Taiwan Semiconductor Manufacturing Company
- Jei-Feng Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field ring to improve the breakdown voltage for a high voltage bipo...
- Patent number 6,162,695
- Issue date Dec 19, 2000
- Taiwan Semiconductor Manufacturing Company
- Jei-Feng Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of increasing end point detection capability of reactive ion...
- Patent number 6,004,829
- Issue date Dec 21, 1999
- Taiwan Semiconductor Manufacturing Company
- Tzong-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Shallow trench contact structure to solve the problem or schottky d...
- Publication number 20030087482
- Publication date May 8, 2003
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Jei-Fung Hwang
- H01 - BASIC ELECTRIC ELEMENTS

Ruey-Hsin Liou

Person

Patents Grantslast 30 patents

Schottky diode having a shallow trench contact structure for preven...

Shallow trench contact structure to solve the problem of schottky d...

Method for making improved polysilicon emitters for bipolar transis...

Method of forming a HVNMOS with an N&#x0002B; buried layer combined...

Use of polysilicon field plates to improve high voltage bipolar dev...

Field ring to improve the breakdown voltage for a high voltage bipo...

Method of increasing end point detection capability of reactive ion...

Patents Applicationslast 30 patents

Shallow trench contact structure to solve the problem or schottky d...

Method of forming a HVNMOS with an N+ buried layer combined...