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Ruo Fang ZHANG
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Wuhan, CN
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Patents Grants
last 30 patents
Information
Patent Grant
Method of fabrication thereof a multi-level vertical memory device...
Patent number
11,805,643
Issue date
Oct 31, 2023
Yangtze Memory Technologies Co., Ltd.
Ruo Fang Zhang
Information
Patent Grant
3D NAND memory device and method of forming the same
Patent number
11,737,263
Issue date
Aug 22, 2023
Yangtze Memory Technologies Co., Ltd.
Ruo Fang Zhang
G11 - INFORMATION STORAGE
Information
Patent Grant
Multi-level vertical memory device including inter-level channel co...
Patent number
11,502,094
Issue date
Nov 15, 2022
Yangtze Memory Technologies Co., Ltd.
Ruo Fang Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
3D NAND memory device and method of forming the same
Patent number
11,145,667
Issue date
Oct 12, 2021
Yangtze Memory Technologies Co., Ltd.
Ruo Fang Zhang
G11 - INFORMATION STORAGE
Information
Patent Grant
Semiconductor plug protected by protective dielectric layer in thre...
Patent number
10,714,493
Issue date
Jul 14, 2020
Yangtze Memory Technologies Co., Ltd.
Haohao Yang
G11 - INFORMATION STORAGE
Patents Applications
last 30 patents
Information
Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
Publication number
20230337423
Publication date
Oct 19, 2023
Yangtze Memory Technologies Co., Ltd.
Ruo Fang ZHANG
G11 - INFORMATION STORAGE
Information
Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF
Publication number
20210398999
Publication date
Dec 23, 2021
Yangtze Memory Technologies Co., Ltd.
Ruo Fang ZHANG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
Publication number
20210391347
Publication date
Dec 16, 2021
Yangtze Memory Technologies Co., Ltd.
Ruo Fang ZHANG
G11 - INFORMATION STORAGE
Information
Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF
Publication number
20200105778
Publication date
Apr 2, 2020
Yangtze Memory Technologies Co., Ltd.
Ruo Fang ZHANG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR PLUG PROTECTED BY PROTECTIVE DIELECTRIC LAYER IN THRE...
Publication number
20200105781
Publication date
Apr 2, 2020
Yangtze Memory Technologies Co., Ltd.
Haohao Yang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
Publication number
20200091166
Publication date
Mar 19, 2020
Yangtze Memory Technologies Co., Ltd.
Ruo Fang ZHANG
H01 - BASIC ELECTRIC ELEMENTS