Rushabh SHAH

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate-all-around integrated circuit structures having germanium-dope...
- Patent number 12,166,124
- Issue date Dec 10, 2024
- Intel Corporation
- Ryan Hickey
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FORMATION OF METAL CONTACTS TO SILICON GERMANIUM LAYERS WITH ETCH R...
- Publication number 20230207655
- Publication date Jun 29, 2023
- Intel Corporation
- Rushabh D. Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20230207651
- Publication date Jun 29, 2023
- Mohammad HASAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF HIGH VOLTAGE (HV) AND LOW VOLTAGE (LV) TRANSISTOR...
- Publication number 20230197724
- Publication date Jun 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING METAL GATE PLUG LANDED ON DIEL...
- Publication number 20230197816
- Publication date Jun 22, 2023
- Mohammad HASAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20230197855
- Publication date Jun 22, 2023
- Mohammad HASAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED INNER GATE SPACERS AND PARTIAL REPLACEMENT CHANNEL IN NON-...
- Publication number 20230178658
- Publication date Jun 8, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTOR DEVICE WITH COMPRESSIVELY STRAINED CHANN...
- Publication number 20230163212
- Publication date May 25, 2023
- Intel Corporation
- Cory C. Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON RICH CAPPING LAYER PRE-AMORPHIZED WITH GERMANIUM AND BORON...
- Publication number 20230101725
- Publication date Mar 30, 2023
- Intel Corporation
- Debaleena NANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE, HIGH GERMANIUM, HIGH BORON SIGE:B PEPI WITH A SILI...
- Publication number 20230087399
- Publication date Mar 23, 2023
- Intel Corporation
- Debaleena NANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW GERMANIUM, HIGH BORON SILICON RICH CAPPING LAYER FOR PMOS CONTA...
- Publication number 20220416050
- Publication date Dec 29, 2022
- Intel Corporation
- Debaleena NANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CONTACT RESISTIVITY WITH PMOS GERMANIUM AND SILICON DOPED W...
- Publication number 20220416043
- Publication date Dec 29, 2022
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-DOPE...
- Publication number 20210408285
- Publication date Dec 30, 2021
- Intel Corporation
- Ryan HICKEY
- H01 - BASIC ELECTRIC ELEMENTS

Rushabh SHAH

Person

Patents Grantslast 30 patents

Gate-all-around integrated circuit structures having germanium-dope...

Patents Applicationslast 30 patents

FORMATION OF METAL CONTACTS TO SILICON GERMANIUM LAYERS WITH ETCH R...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

CO-INTEGRATION OF HIGH VOLTAGE (HV) AND LOW VOLTAGE (LV) TRANSISTOR...

INTEGRATED CIRCUIT STRUCTURES HAVING METAL GATE PLUG LANDED ON DIEL...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

RECESSED INNER GATE SPACERS AND PARTIAL REPLACEMENT CHANNEL IN NON-...

GATE-ALL-AROUND TRANSISTOR DEVICE WITH COMPRESSIVELY STRAINED CHANN...

SILICON RICH CAPPING LAYER PRE-AMORPHIZED WITH GERMANIUM AND BORON...

LOW TEMPERATURE, HIGH GERMANIUM, HIGH BORON SIGE:B PEPI WITH A SILI...

LOW GERMANIUM, HIGH BORON SILICON RICH CAPPING LAYER FOR PMOS CONTA...

REDUCED CONTACT RESISTIVITY WITH PMOS GERMANIUM AND SILICON DOPED W...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-DOPE...