Ruxin WEI

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Power leakage blocking in low-dropout regulator
- Patent number 12,112,811
- Issue date Oct 8, 2024
- Yangtze Memory Technologies Co., Ltd.
- Ruxin Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage supply circuits, three-dimensional memory devices, peripher...
- Patent number 12,100,457
- Issue date Sep 24, 2024
- Yangtze Memory Technologies Co., Ltd.
- Ning Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Power leakage blocking in low-dropout regulator
- Patent number 11,790,996
- Issue date Oct 17, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ruxin Wei
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Voltage Control in Memory Devices
- Publication number 20250157550
- Publication date May 15, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yiqun CEN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY, STORAGE SYSTEMS, AND OPERATION METHODS OF MEMORY
- Publication number 20250157497
- Publication date May 15, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhuangzhuang Wu
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT BIAS CIRCUIT, MEMORY DEVICE AND MEMORY SYSTEM
- Publication number 20250104780
- Publication date Mar 27, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xinyue ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE SUPPLY CIRCUITS, THREE-DIMENSIONAL MEMORY DEVICES, PERIPHER...
- Publication number 20240412791
- Publication date Dec 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Ning Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
POWER LEAKAGE BLOCKING IN LOW-DROPOUT REGULATOR
- Publication number 20230410918
- Publication date Dec 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ruxin WEI
- G05 - CONTROLLING REGULATING
Information Patent Application
VOLTAGE SUPPLY CIRCUITS, THREE-DIMENSIONAL MEMORY DEVICES, PERIPHER...
- Publication number 20230343399
- Publication date Oct 26, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ning Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
POWER LEAKAGE BLOCKING IN LOW-DROPOUT REGULATOR
- Publication number 20220392545
- Publication date Dec 8, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Ruxin WEI
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Power leakage blocking in low-dropout regulator

Voltage supply circuits, three-dimensional memory devices, peripher...

Power leakage blocking in low-dropout regulator

Patents Applicationslast 30 patents

Voltage Control in Memory Devices

MEMORY, STORAGE SYSTEMS, AND OPERATION METHODS OF MEMORY

CURRENT BIAS CIRCUIT, MEMORY DEVICE AND MEMORY SYSTEM

VOLTAGE SUPPLY CIRCUITS, THREE-DIMENSIONAL MEMORY DEVICES, PERIPHER...

POWER LEAKAGE BLOCKING IN LOW-DROPOUT REGULATOR

VOLTAGE SUPPLY CIRCUITS, THREE-DIMENSIONAL MEMORY DEVICES, PERIPHER...

POWER LEAKAGE BLOCKING IN LOW-DROPOUT REGULATOR