Ryan Chia-Jen Chen

Person

Chiaya, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Fin field effect transistor devices including NMOS device and PMOS...
- Patent number 12,170,332
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yuan-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure cutting process and structures formed thereby
- Patent number 12,132,050
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with cut metal gate and method of manufacture
- Patent number 12,112,990
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor devices and methods of forming the same
- Patent number 12,087,639
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chang Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming fin field-effect transistors
- Patent number 12,068,199
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having dielectric structure extending into...
- Patent number 12,027,608
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 12,021,079
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacturing the same
- Patent number 12,020,986
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yuan-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacers around contact plugs and method forming same
- Patent number 12,015,071
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stacks for semiconductor devices of different conductivity types
- Patent number 12,015,030
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yih-Ann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having isolations between fins and comprisi...
- Patent number 12,002,766
- Issue date Jun 4, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yuan-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,996,466
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate processes
- Patent number 11,990,341
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure field-effect transistor device and method of forming
- Patent number 11,961,919
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,942,532
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FinFET) device stru...
- Patent number 11,923,359
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Residue-free metal gate cutting for fin-like field effect transistor
- Patent number 11,915,980
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a FinFET device including a step of recessing a su...
- Patent number 11,908,939
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia Tai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making gate structure of a semiconductor device
- Patent number 11,894,443
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure cutting process and structures formed thereby
- Patent number 11,894,370
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 11,848,240
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,823,958
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure cutting process
- Patent number 11,810,909
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,804,548
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yuan-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with cutting depth control and method for f...
- Patent number 11,721,588
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chang Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming fin field-effect transistors
- Patent number 11,670,552
- Issue date Jun 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with cut metal gate and method of manufacture
- Patent number 11,652,005
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure and methods of fabricating thereof
- Patent number 11,637,206
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Wei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate with slanted sidewalls
- Patent number 11,616,061
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Residue-free metal gate cutting for fin-like field effect transistor
- Patent number 11,527,443
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METAL ETCHING WITH REDUCED TILT ANGLE
- Publication number 20240429064
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Hsuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH COMPOSITE OXIDE LAYER
- Publication number 20240371872
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Cut Metal Gate and Method of Manufacture
- Publication number 20240371704
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Cutting Process and Structures Formed Thereby
- Publication number 20240371869
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240363431
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chang Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Fin Structures
- Publication number 20240363422
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI LOSS MITIGATION BY RADICAL OXIDATION TREATMENT
- Publication number 20240355906
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shao-Hua Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240332420
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chieh CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE W-SHAPED PROFILE FOR STRUCTURES
- Publication number 20240321739
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jih-Sheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC STRUCTURE EXTENDING INTO...
- Publication number 20240313091
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240312842
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- YUAN-SHENG HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240304620
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME
- Publication number 20240297235
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240290869
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE PROCESSES
- Publication number 20240290620
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing CO.,LTD.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20240282719
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- YUAN-SHENG HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240250154
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE
- Publication number 20240194785
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia Tai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESIDUE-FREE METAL GATE CUTTING FOR FIN-LIKE FIELD EFFECT TRANSISTOR
- Publication number 20240194534
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Ya-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...
- Publication number 20240178224
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Shu WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE
- Publication number 20240128126
- Publication date Apr 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPATTERNING GATE PROCESSING
- Publication number 20240121935
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Y.L. Cheng
Information Patent Application
TUNABLE STRUCTURE PROFILE
- Publication number 20240120388
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Wei Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT
- Publication number 20240112957
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Xuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Cutting Process and Structures Formed Thereby
- Publication number 20240113112
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ryan Chia-Jen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240105795
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jun-Ye Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240096630
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Wei Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240096806
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHAO-HSUAN CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240072156
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Huang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240072170
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Wei Yin
- H01 - BASIC ELECTRIC ELEMENTS

Ryan Chia-Jen Chen

Person

Patents Grantslast 30 patents

Fin field effect transistor devices including NMOS device and PMOS...

Semiconductor structure cutting process and structures formed thereby

Semiconductor device with cut metal gate and method of manufacture

Fin field-effect transistor devices and methods of forming the same

Methods for forming fin field-effect transistors

Semiconductor structure having dielectric structure extending into...

Fin field-effect transistor and method of forming the same

Semiconductor structure and method of manufacturing the same

Air spacers around contact plugs and method forming same

Gate stacks for semiconductor devices of different conductivity types

Semiconductor structure having isolations between fins and comprisi...

Semiconductor device and method of manufacture

Cut metal gate processes

Nanostructure field-effect transistor device and method of forming

Fin field-effect transistor and method of forming the same

Method for forming fin field effect transistor (FinFET) device stru...

Residue-free metal gate cutting for fin-like field effect transistor

Method of making a FinFET device including a step of recessing a su...

Method of making gate structure of a semiconductor device

Semiconductor structure cutting process and structures formed thereby

Method of manufacturing a semiconductor device

Semiconductor device and method

Metal gate structure cutting process

Semiconductor structure and method for forming the same

Semiconductor structure with cutting depth control and method for f...

Methods for forming fin field-effect transistors

Semiconductor device with cut metal gate and method of manufacture

Metal gate structure and methods of fabricating thereof

Cut metal gate with slanted sidewalls

Residue-free metal gate cutting for fin-like field effect transistor

Patents Applicationslast 30 patents

METAL ETCHING WITH REDUCED TILT ANGLE

SEMICONDUCTOR STRUCTURE WITH COMPOSITE OXIDE LAYER

Semiconductor Device with Cut Metal Gate and Method of Manufacture

Semiconductor Structure Cutting Process and Structures Formed Thereby

FIN FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME

Semiconductor Fin Structures

STI LOSS MITIGATION BY RADICAL OXIDATION TREATMENT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TUNABLE W-SHAPED PROFILE FOR STRUCTURES

SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC STRUCTURE EXTENDING INTO...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

CUT METAL GATE PROCESSES

METHODS FOR FORMING SEMICONDUCTOR STRUCTURE

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

FINFET DEVICE

RESIDUE-FREE METAL GATE CUTTING FOR FIN-LIKE FIELD EFFECT TRANSISTOR

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRU...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE

MULTIPATTERNING GATE PROCESSING

TUNABLE STRUCTURE PROFILE

BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT

Semiconductor Structure Cutting Process and Structures Formed Thereby

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF