Ryan M. Martin

Person

YORKTOWN HEIGHTS, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Josephson junction with spacer
- Patent number 10,170,679
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Josephson junction with spacer
- Patent number 9,929,334
- Issue date Mar 27, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered fin field effect transistor
- Patent number 9,018,084
- Issue date Apr 28, 2015
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V finFETs on silicon substrate
- Patent number 8,937,299
- Issue date Jan 20, 2015
- International Business Machines Corporation
- Anirban Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etch back process for carbon nanotubes intergration
- Patent number 8,449,781
- Issue date May 28, 2013
- International Business Machines Corporation
- Maxime Darnon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Structure with isotropic silicon recess profile in nanoscale dimens...
- Patent number 8,232,171
- Issue date Jul 31, 2012
- International Business Machines Corporation
- Sebastian Ulrich Engelmann
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
JOSEPHSON JUNCTION WITH SPACER
- Publication number 20180040800
- Publication date Feb 8, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOSEPHSON JUNCTION WITH SPACER
- Publication number 20160211438
- Publication date Jul 21, 2016
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON SUBSTRATE PREPARATION FOR SELECTIVE III-V EPITAXY
- Publication number 20150255281
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A III-V CRYSTALLINE COMPOUND MATERIAL S...
- Publication number 20150048423
- Publication date Feb 19, 2015
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD FOR FORMING A CRYSTALLINE COMPOUND III-V MATERIAL ON A SIN...
- Publication number 20150048422
- Publication date Feb 19, 2015
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TAPERED FIN FIELD EFFECT TRANSISTOR
- Publication number 20140308806
- Publication date Oct 16, 2014
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TAPERED FIN FIELD EFFECT TRANSISTOR
- Publication number 20140306286
- Publication date Oct 16, 2014
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V FINFETS ON SILICON SUBSTRATE
- Publication number 20140264607
- Publication date Sep 18, 2014
- International Business Machines Corporation
- ANIRBAN BASU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V FINFETS ON SILICON SUBSTRATE
- Publication number 20140264446
- Publication date Sep 18, 2014
- International Business Machines Corporation
- ANIRBAN BASU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH ISOTROPIC SILICON RECESS PROFILE IN NANOSCALE DIMENS...
- Publication number 20120193680
- Publication date Aug 2, 2012
- International Business Machines Corporation
- Sebastian Ulrich Engelmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH ISOTROPIC SILICON RECESS PROFILE IN NANOSCALE DIMENS...
- Publication number 20120193715
- Publication date Aug 2, 2012
- International Business Machines Corporation
- Sebastian Ulrich Engelmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ETCH BACK PROCESS FOR CARBON NANOTUBES INTERGRATION
- Publication number 20110311825
- Publication date Dec 22, 2011
- International Business Machines Corp.
- Maxime Darnon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
STRUCTURE WITH ISOTROPIC SILICON RECESS PROFILE IN NANOSCALE DIMENS...
- Publication number 20110062494
- Publication date Mar 17, 2011
- International Business Machines Corporation
- Sebastian Ulrich Engelmann
- H01 - BASIC ELECTRIC ELEMENTS

Ryan M. Martin

Person

Patents Grantslast 30 patents

Josephson junction with spacer

Josephson junction with spacer

Tapered fin field effect transistor

III-V finFETs on silicon substrate

Selective etch back process for carbon nanotubes intergration

Structure with isotropic silicon recess profile in nanoscale dimens...

Patents Applicationslast 30 patents

JOSEPHSON JUNCTION WITH SPACER

JOSEPHSON JUNCTION WITH SPACER

SILICON SUBSTRATE PREPARATION FOR SELECTIVE III-V EPITAXY

SEMICONDUCTOR DEVICE HAVING A III-V CRYSTALLINE COMPOUND MATERIAL S...

A METHOD FOR FORMING A CRYSTALLINE COMPOUND III-V MATERIAL ON A SIN...

TAPERED FIN FIELD EFFECT TRANSISTOR

TAPERED FIN FIELD EFFECT TRANSISTOR

III-V FINFETS ON SILICON SUBSTRATE

III-V FINFETS ON SILICON SUBSTRATE

STRUCTURE WITH ISOTROPIC SILICON RECESS PROFILE IN NANOSCALE DIMENS...

STRUCTURE WITH ISOTROPIC SILICON RECESS PROFILE IN NANOSCALE DIMENS...

SELECTIVE ETCH BACK PROCESS FOR CARBON NANOTUBES INTERGRATION

STRUCTURE WITH ISOTROPIC SILICON RECESS PROFILE IN NANOSCALE DIMENS...