Ryan W. Wuthrich

Person

Hinesburg, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 7,713,829
- Issue date May 11, 2010
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Yield improvement in silicon-germanium epitaxial growth
- Patent number 7,413,967
- Issue date Aug 19, 2008
- International Business Machines Corporation
- Mark D. Dupuis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 7,173,274
- Issue date Feb 6, 2007
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Yield improvement in silicon-germanium epitaxial growth
- Patent number 7,118,995
- Issue date Oct 10, 2006
- International Business Machines Corporation
- Mark D. Dupuis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused extrinsic base and method for fabrication
- Patent number 6,900,519
- Issue date May 31, 2005
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ monitoring and control of germanium profile in silicon-germ...
- Patent number 6,881,259
- Issue date Apr 19, 2005
- International Business Machines Corporation
- David C. Ahlgren
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single reactor, multi-pressure chemical vapor deposition for semico...
- Patent number 6,875,279
- Issue date Apr 5, 2005
- International Business Machines Corporation
- Jack O. Chu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diffused extrinsic base and method for fabrication
- Patent number 6,869,854
- Issue date Mar 22, 2005
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device with in-situ doped, raised source and drain structures
- Patent number 6,858,903
- Issue date Feb 22, 2005
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect pre-emitter and pre-base oxide etch for bipolar transist...
- Patent number 6,858,532
- Issue date Feb 22, 2005
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 6,815,802
- Issue date Nov 9, 2004
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase carbon and boron doping concentrations in Si and...
- Patent number 6,780,735
- Issue date Aug 24, 2004
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of MOSFET device with in-situ doped, raised s...
- Patent number 6,774,000
- Issue date Aug 10, 2004
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized blocking impurity placement for SiGe HBTs
- Patent number 6,744,079
- Issue date Jun 1, 2004
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 6,426,265
- Issue date Jul 30, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for treating a semiconductor substrate
- Patent number 6,354,309
- Issue date Mar 12, 2002
- International Business Machines Corporation
- Russell H. Arndt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for treating a semiconductor substrate
- Patent number 6,173,720
- Issue date Jan 16, 2001
- International Business Machines Corporation
- Russell H. Arndt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a multilayer ceramic substrate from thin gr...
- Patent number 5,948,193
- Issue date Sep 7, 1999
- International Business Machines Corporation
- Michael A. Cohn
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Weighted sintering process and conformable load tile
- Patent number 5,874,162
- Issue date Feb 23, 1999
- International Business Machines Corporation
- Kurt E. Bastian
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Stacking system for substrates
- Patent number 5,741,131
- Issue date Apr 21, 1998
- International Business Machines Corporation
- Joseph Paul DeGeorge
- F27 - FURNACES KILNS OVENS RETORTS

Patents Applicationslast 30 patents

Information Patent Application
INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...
- Publication number 20080124881
- Publication date May 29, 2008
- International Business Machines Corporation
- Jack Ooh Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH
- Publication number 20060289959
- Publication date Dec 28, 2006
- Mark D. Dupuis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH
- Publication number 20050260826
- Publication date Nov 24, 2005
- International Business Machines Corporation
- Mark D. Dupuis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single reactor, multi-pressure chemical vapor deposition for semico...
- Publication number 20050145172
- Publication date Jul 7, 2005
- IBM Corporation (Burlington)
- Jack O. Chu
- C30 - CRYSTAL GROWTH
Information Patent Application
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Publication number 20050054171
- Publication date Mar 10, 2005
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE WITH IN-SITU DOPED, RAISED SOURCE AND DRAIN STRUCTURES
- Publication number 20040248368
- Publication date Dec 9, 2004
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffused extrinsic base and method for fabrication
- Publication number 20040222495
- Publication date Nov 11, 2004
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized blocking impurity placement for SiGe HBTs
- Publication number 20040140481
- Publication date Jul 22, 2004
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low defect pre-emitter and pre-base oxide etch for bipolar transist...
- Publication number 20040110354
- Publication date Jun 10, 2004
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacture of MOSFET device with in-situ doped, raised s...
- Publication number 20040097047
- Publication date May 20, 2004
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffused extrinsic base and method for fabrication
- Publication number 20040014271
- Publication date Jan 22, 2004
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized blocking impurity placement for SiGe HBTs
- Publication number 20030170960
- Publication date Sep 11, 2003
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single reactor, multi-pressure chemical vapor deposition for semico...
- Publication number 20030094130
- Publication date May 22, 2003
- International Business Machines Corporation
- Jack O. Chu
- C30 - CRYSTAL GROWTH
Information Patent Application
Method to increase carbon and boron doping concentrations in Si and...
- Publication number 20020160587
- Publication date Oct 31, 2002
- Basanth Jagannathan
- C30 - CRYSTAL GROWTH
Information Patent Application
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Publication number 20020121676
- Publication date Sep 5, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...
- Publication number 20020100917
- Publication date Aug 1, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS

Ryan W. Wuthrich

Person

Patents Grantslast 30 patents

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Yield improvement in silicon-germanium epitaxial growth

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Yield improvement in silicon-germanium epitaxial growth

Diffused extrinsic base and method for fabrication

In-situ monitoring and control of germanium profile in silicon-germ...

Single reactor, multi-pressure chemical vapor deposition for semico...

Diffused extrinsic base and method for fabrication

MOSFET device with in-situ doped, raised source and drain structures

Low defect pre-emitter and pre-base oxide etch for bipolar transist...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Method to increase carbon and boron doping concentrations in Si and...

Method of manufacture of MOSFET device with in-situ doped, raised s...

Optimized blocking impurity placement for SiGe HBTs

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Process for treating a semiconductor substrate

Process for treating a semiconductor substrate

Process for fabricating a multilayer ceramic substrate from thin gr...

Weighted sintering process and conformable load tile

Stacking system for substrates

Patents Applicationslast 30 patents

INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...

YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH

YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH

Single reactor, multi-pressure chemical vapor deposition for semico...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

MOSFET DEVICE WITH IN-SITU DOPED, RAISED SOURCE AND DRAIN STRUCTURES

Diffused extrinsic base and method for fabrication

Optimized blocking impurity placement for SiGe HBTs

Low defect pre-emitter and pre-base oxide etch for bipolar transist...

Method of manufacture of MOSFET device with in-situ doped, raised s...

Diffused extrinsic base and method for fabrication

Optimized blocking impurity placement for SiGe HBTs

Single reactor, multi-pressure chemical vapor deposition for semico...

Method to increase carbon and boron doping concentrations in Si and...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...