Ryoji Hoshi

Person

Nishishirakawa-gun Fukushima, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of producing silicon single crystal, and silicon single crys...
- Patent number 11,053,606
- Issue date Jul 6, 2021
- Shin-Etsu Handotai Co., Ltd.
- Kosei Sugawara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for controlling resistivity and N-type silicon single crystal
- Patent number 10,400,353
- Issue date Sep 3, 2019
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing silicon single crystal
- Patent number 10,100,430
- Issue date Oct 16, 2018
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heat treatment of silicon single crystal wafer
- Patent number 10,066,322
- Issue date Sep 4, 2018
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of producing silicon single crystal
- Patent number 9,938,634
- Issue date Apr 10, 2018
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heat treatment of silicon single crystal wafer
- Patent number 9,938,640
- Issue date Apr 10, 2018
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heat treatment of silicon single crystal wafer
- Patent number 9,850,595
- Issue date Dec 26, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon single crystal growing apparatus and method for growing sil...
- Patent number 9,783,912
- Issue date Oct 10, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for evaluating concentration of defect in silicon single cry...
- Patent number 9,773,710
- Issue date Sep 26, 2017
- Shin-Etsu Handotai Co., Ltd.
- Hiroyuki Kamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a defect-controlled low-oxygen concentrati...
- Patent number 9,650,725
- Issue date May 16, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer and manufacturing method thereof
- Patent number 9,425,345
- Issue date Aug 23, 2016
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method for producing the same
- Patent number 9,337,013
- Issue date May 10, 2016
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for measuring distance between lower end surface of heat ins...
- Patent number 9,260,796
- Issue date Feb 16, 2016
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing single crystal
- Patent number 9,217,208
- Issue date Dec 22, 2015
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for evaluating silicon single crystal and method for manufac...
- Patent number 9,111,883
- Issue date Aug 18, 2015
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for measuring and controlling distance between lower end sur...
- Patent number 8,885,915
- Issue date Nov 11, 2014
- Shin-Etsu Handotai Co., Ltd.
- Kosei Sugawara
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Apparatus and method for producing single crystals
- Patent number 8,764,900
- Issue date Jul 1, 2014
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing single crystal and a method for producing anne...
- Patent number 8,211,228
- Issue date Jul 3, 2012
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growth method and single crystal pulling apparatus
- Patent number 8,083,852
- Issue date Dec 27, 2011
- Shin-Etsu Handotai Co., Ltd.
- Kosei Sugawara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing a silicon single crystal and a silicon single...
- Patent number 7,909,930
- Issue date Mar 22, 2011
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon epitaxial wafer
- Patent number 7,713,851
- Issue date May 11, 2010
- Shin-Etsu Handotai Co., Ltd.
- Fumitaka Kume
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a single crystal
- Patent number 7,594,966
- Issue date Sep 29, 2009
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Single crystal, single crystal wafer, epitaxial wafer, and method o...
- Patent number 7,396,405
- Issue date Jul 8, 2008
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer for epitaxial growth, an epitaxial wafer, and a metho...
- Patent number 7,204,881
- Issue date Apr 17, 2007
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heater for manufacturing a crystal
- Patent number 7,201,801
- Issue date Apr 10, 2007
- Shin-Etsu Handotai Co., Ltd.
- Susumu Sonokawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon single crystal wafer and method for manufacturing the same
- Patent number 6,893,499
- Issue date May 17, 2005
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for producing silicon semiconductor single cry...
- Patent number 6,764,548
- Issue date Jul 20, 2004
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for growing single crystal, method for producing single c...
- Patent number 6,632,280
- Issue date Oct 14, 2003
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon wafer and method for producing silicon single crystal
- Patent number 6,632,411
- Issue date Oct 14, 2003
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing silicon single crystal and silicon single crystal
- Patent number 6,592,662
- Issue date Jul 15, 2003
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR GROWING SINGLE CRYSTAL
- Publication number 20210222321
- Publication date Jul 22, 2021
- Shin-Etsu Handotai Co., Ltd.
- Ryoji HOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SINGLE CRYSTAL AND SILICON SINGLE CRYSTAL WAFER
- Publication number 20210189589
- Publication date Jun 24, 2021
- Shin-Etsu Handotai Co., Ltd.
- Kosei Sugawara
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SILICON SINGLE CRYSTAL, AND SILICON SINGLE CRYS...
- Publication number 20190376205
- Publication date Dec 12, 2019
- Shin-Etsu Handotai Co., Ltd.
- Kosei Sugawara
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER
- Publication number 20170342596
- Publication date Nov 30, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji HOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CONTROLLING RESISTIVITY AND N-TYPE SILICON SINGLE CRYSTAL
- Publication number 20170260645
- Publication date Sep 14, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji HOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER
- Publication number 20170037541
- Publication date Feb 9, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji HOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER
- Publication number 20170002480
- Publication date Jan 5, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji HOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR EVALUATING CONCENTRATION OF DEFECT IN SILICON SINGLE CRY...
- Publication number 20160300768
- Publication date Oct 13, 2016
- Shin-Etsu Handotai Co., Ltd.
- Hiroyuki KAMADA
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF PRODUCING SILICON SINGLE CRYSTAL
- Publication number 20160068992
- Publication date Mar 10, 2016
- SHINE-TSU HANDOTAI CO., LTD.
- Masahiro SAKURADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SILICON CARBIDE AND SILICON CARBIDE
- Publication number 20150360959
- Publication date Dec 17, 2015
- Shin-Etsu Handotai Co., Ltd.
- Ryoji HOSHI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR GROWING SILICON SINGLE CRYSTAL
- Publication number 20150240380
- Publication date Aug 27, 2015
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SINGLE CRYSTAL GROWING APPARATUS AND METHOD FOR GROWING SIL...
- Publication number 20150240379
- Publication date Aug 27, 2015
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER
- Publication number 20150020728
- Publication date Jan 22, 2015
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF
- Publication number 20140374861
- Publication date Dec 25, 2014
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CALCULATING NITROGEN CONCENTRATION IN SILICON SINGLE CRY...
- Publication number 20140379276
- Publication date Dec 25, 2014
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR EVALUATING SILICON SINGLE CRYSTAL AND METHOD FOR MANUFAC...
- Publication number 20140363904
- Publication date Dec 11, 2014
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING THE SAME
- Publication number 20140103492
- Publication date Apr 17, 2014
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICA GLASS CRUCIBLE, METHOD FOR MANUFACTURING SAME, AND METHOD FO...
- Publication number 20130340671
- Publication date Dec 26, 2013
- Shin-Etsu Handotai Co., Ltd.
- Akihiro Kimura
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SINGLE CRYSTAL WAFER
- Publication number 20130323153
- Publication date Dec 5, 2013
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD FOR PRODUCING SINGLE...
- Publication number 20130247815
- Publication date Sep 26, 2013
- Shin-Etsu Handotai Co., Ltd.
- Kosei Sugawara
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MEASURING AND CONTROLLING DISTANCE BETWEEN LOWER END SUR...
- Publication number 20130058540
- Publication date Mar 7, 2013
- Shin-Etsu Handotai Co., Ltd.
- Kosei Sugawara
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL GROWTH METHOD AND SINGLE CRYSTAL PULLING APPARATUS
- Publication number 20110017125
- Publication date Jan 27, 2011
- Shin-Etsu Handotai Co., Ltd.
- Kosei Sugawara
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SINGLE CRYSTAL
- Publication number 20100258050
- Publication date Oct 14, 2010
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING SILICON SINGLE CRYSTAL
- Publication number 20100116195
- Publication date May 13, 2010
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MEASURING DISTANCE BETWEEN LOWER END SURFACE OF HEAT INS...
- Publication number 20100064964
- Publication date Mar 18, 2010
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus and method for producing single crystals
- Publication number 20090249995
- Publication date Oct 8, 2009
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Single Crystal and a Method for Producing Anne...
- Publication number 20080184928
- Publication date Aug 7, 2008
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Epitaxial Wafer And Manufacturing Method Thereof
- Publication number 20080038526
- Publication date Feb 14, 2008
- Shin-Etsu Handotai Co., Ltd.
- Fumitaka Kume
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Epitaxial Wafer and Manufacturing Method Thereof
- Publication number 20070269338
- Publication date Nov 22, 2007
- Shin-Etsu Handotai Co., Ltd.
- Fumitaka Kume
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing a Silicon Single Crystal and a Silicon Single...
- Publication number 20070266930
- Publication date Nov 22, 2007
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH

Ryoji Hoshi

Person

Patents Grantslast 30 patents

Method of producing silicon single crystal, and silicon single crys...

Method for controlling resistivity and N-type silicon single crystal

Method for growing silicon single crystal

Method for heat treatment of silicon single crystal wafer

Method of producing silicon single crystal

Method for heat treatment of silicon single crystal wafer

Method for heat treatment of silicon single crystal wafer

Silicon single crystal growing apparatus and method for growing sil...

Method for evaluating concentration of defect in silicon single cry...

Method for manufacturing a defect-controlled low-oxygen concentrati...

Epitaxial wafer and manufacturing method thereof

Silicon wafer and method for producing the same

Method for measuring distance between lower end surface of heat ins...

Apparatus for producing single crystal

Method for evaluating silicon single crystal and method for manufac...

Method for measuring and controlling distance between lower end sur...

Apparatus and method for producing single crystals

Method for producing single crystal and a method for producing anne...

Single crystal growth method and single crystal pulling apparatus

Method for producing a silicon single crystal and a silicon single...

Method of manufacturing silicon epitaxial wafer

Method for producing a single crystal

Single crystal, single crystal wafer, epitaxial wafer, and method o...

Silicon wafer for epitaxial growth, an epitaxial wafer, and a metho...

Heater for manufacturing a crystal

Silicon single crystal wafer and method for manufacturing the same

Apparatus and method for producing silicon semiconductor single cry...

Apparatus for growing single crystal, method for producing single c...

Silicon wafer and method for producing silicon single crystal

Method for preparing silicon single crystal and silicon single crystal

Patents Applicationslast 30 patents

METHOD FOR GROWING SINGLE CRYSTAL

SILICON SINGLE CRYSTAL AND SILICON SINGLE CRYSTAL WAFER

METHOD OF PRODUCING SILICON SINGLE CRYSTAL, AND SILICON SINGLE CRYS...

METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER

METHOD FOR CONTROLLING RESISTIVITY AND N-TYPE SILICON SINGLE CRYSTAL

METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER

METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER

METHOD FOR EVALUATING CONCENTRATION OF DEFECT IN SILICON SINGLE CRY...

METHOD OF PRODUCING SILICON SINGLE CRYSTAL

METHOD OF PRODUCING SILICON CARBIDE AND SILICON CARBIDE

METHOD FOR GROWING SILICON SINGLE CRYSTAL

SILICON SINGLE CRYSTAL GROWING APPARATUS AND METHOD FOR GROWING SIL...

METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER

EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF

METHOD FOR CALCULATING NITROGEN CONCENTRATION IN SILICON SINGLE CRY...

METHOD FOR EVALUATING SILICON SINGLE CRYSTAL AND METHOD FOR MANUFAC...

SILICON WAFER AND METHOD FOR PRODUCING THE SAME

SILICA GLASS CRUCIBLE, METHOD FOR MANUFACTURING SAME, AND METHOD FO...

SILICON SINGLE CRYSTAL WAFER

SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD FOR PRODUCING SINGLE...

METHOD FOR MEASURING AND CONTROLLING DISTANCE BETWEEN LOWER END SUR...

SINGLE CRYSTAL GROWTH METHOD AND SINGLE CRYSTAL PULLING APPARATUS

APPARATUS FOR PRODUCING SINGLE CRYSTAL

METHOD FOR GROWING SILICON SINGLE CRYSTAL

METHOD FOR MEASURING DISTANCE BETWEEN LOWER END SURFACE OF HEAT INS...

Apparatus and method for producing single crystals

Method for Producing Single Crystal and a Method for Producing Anne...

Silicon Epitaxial Wafer And Manufacturing Method Thereof

Silicon Epitaxial Wafer and Manufacturing Method Thereof

Method for Producing a Silicon Single Crystal and a Silicon Single...