Ryota Katsumata

Follow

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
PMOSFET device with localized nitrogen sidewall implantation
- Patent number 6,724,053
- Issue date Apr 20, 2004
- International Business Machines Corporation
- Rama Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Reducing threshold voltage roll-up/roll-off effect for MOSFETS
- Publication number 20020177264
- Publication date Nov 28, 2002
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS