Ryota Yonezawa

Person

Albany, NY, US

People

Patents Applicationslast 30 patents

Information Patent Application
AREA SELECTIVE DEPOSITION OF METALS FOR ELECTRONIC DEVICES
- Publication number 20250154643
- Publication date May 15, 2025
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING A MEMORY DEVICE IN A RECESSED FEATURE
- Publication number 20250140551
- Publication date May 1, 2025
- TOKYO ELECTRON LIMITED
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF VIA FILLING
- Publication number 20250105059
- Publication date Mar 27, 2025
- TOKYO ELECTRON LIMITED
- Ryota Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING SEMICONDUCTOR DEVICES THAT INCLUDE METAL CAP LAYERS
- Publication number 20240363410
- Publication date Oct 31, 2024
- TOKYO ELECTRON LIMITED
- Ryota Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE PRECLEANING PRIOR TO METAL FILLING
- Publication number 20230411142
- Publication date Dec 21, 2023
- TOKYO ELECTRON LIMITED
- Ryota Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cyclic Film Deposition Using Reductant Gas
- Publication number 20230399743
- Publication date Dec 14, 2023
- TOKYO ELECTRON LIMITED
- Ryota Yonezawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION
- Publication number 20230274932
- Publication date Aug 31, 2023
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS

Ryota Yonezawa

Person

Patents Applicationslast 30 patents

AREA SELECTIVE DEPOSITION OF METALS FOR ELECTRONIC DEVICES

METHOD OF FORMING A MEMORY DEVICE IN A RECESSED FEATURE

METHOD OF VIA FILLING

METHODS FOR MAKING SEMICONDUCTOR DEVICES THAT INCLUDE METAL CAP LAYERS

METAL OXIDE PRECLEANING PRIOR TO METAL FILLING

Cyclic Film Deposition Using Reductant Gas

SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION