Rytis Dargis

Person

Oak Ridge, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electronic device with 2-dimensional electron gas between polar-ori...
- Patent number 11,757,008
- Issue date Sep 12, 2023
- IQE PLC
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated epitaxial metal electrodes
- Patent number 11,495,670
- Issue date Nov 8, 2022
- IQE PLC
- Rodney Pelzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pnictide nanocomposite structure for lattice stabilization
- Patent number 11,133,389
- Issue date Sep 28, 2021
- IQE PLC
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N to rare earth transition in a semiconductor structure
- Patent number 11,063,114
- Issue date Jul 13, 2021
- IQE PLC
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial metal oxide as buffer for epitaxial III-V layers
- Patent number 10,923,345
- Issue date Feb 16, 2021
- IQE PLC
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated epitaxial metal electrodes
- Patent number 10,825,912
- Issue date Nov 3, 2020
- IQE PLC
- Rodney Pelzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pnictide buffer structures and devices for GaN base applications
- Patent number 10,615,141
- Issue date Apr 7, 2020
- IQE plc
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Re-based integrated photonic and electronic layered structures
- Patent number 10,605,987
- Issue date Mar 31, 2020
- IQE plc
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial AIN/cREO structure for RF filter applications
- Patent number 10,573,686
- Issue date Feb 25, 2020
- IQE plc
- Wang Nang Wang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Layer structures for RF filters fabricated using rare earth oxides...
- Patent number 10,566,944
- Issue date Feb 18, 2020
- IQE plc
- Rodney Pelzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal electrode with tunable work functions
- Patent number 10,418,457
- Issue date Sep 17, 2019
- IQE plc
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rare earth pnictides for strain management
- Patent number 10,332,857
- Issue date Jun 25, 2019
- IQE plc
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated epitaxial metal electrodes
- Patent number 10,128,350
- Issue date Nov 13, 2018
- IQE plc
- Rodney Pelzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layer structures for RF filters fabricated using rare earth oxides...
- Patent number 10,075,143
- Issue date Sep 11, 2018
- IQE, plc
- Rodney Pelzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N semiconductor layer on Si substrate
- Patent number 9,917,193
- Issue date Mar 13, 2018
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress mitigating amorphous SiO2 interlayer
- Patent number 9,824,886
- Issue date Nov 21, 2017
- Translucent, Inc.
- Rytis Dargis
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nucleation of III-N on REO templates
- Patent number 9,496,132
- Issue date Nov 15, 2016
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing III-N semiconductor layer on Si substrate
- Patent number 9,460,917
- Issue date Oct 4, 2016
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain compensated REO buffer for III-N on silicon
- Patent number 9,443,939
- Issue date Sep 13, 2016
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure with carrier concentration enhanced by single cryst...
- Patent number 9,431,526
- Issue date Aug 30, 2016
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N material grown on REN epitaxial buffer on Si substrate
- Patent number 9,236,249
- Issue date Jan 12, 2016
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si...
- Patent number 9,139,934
- Issue date Sep 22, 2015
- Translucent, Inc.
- Rytis Dargis
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-N material grown on ErAlN buffer on Si substrate
- Patent number 9,142,406
- Issue date Sep 22, 2015
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N material grown on ErAIN buffer on Si substrate
- Patent number 8,994,032
- Issue date Mar 31, 2015
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
REO gate dielectric for III-N device on Si substrate
- Patent number 8,878,188
- Issue date Nov 4, 2014
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlN cap grown on GaN/REO/silicon substrate structure
- Patent number 8,872,308
- Issue date Oct 28, 2014
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN on Si(100) substrate using epi-twist
- Patent number 8,846,504
- Issue date Sep 30, 2014
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IIIOxNy on single crystal SOI substrate and III n growth platform
- Patent number 8,835,955
- Issue date Sep 16, 2014
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N material grown on AIO/AIN buffer on Si substrate
- Patent number 8,823,025
- Issue date Sep 2, 2014
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
REO/ALO/A1N template for III-N material growth on silicon
- Patent number 8,823,055
- Issue date Sep 2, 2014
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LAYERED STRUCTURE
- Publication number 20220359668
- Publication date Nov 10, 2022
- IQE plc
- Andrew CLARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A PNICTIDE NANOCOMPOSITE STRUCTURE FOR LATTICE STABILIZATION
- Publication number 20220102504
- Publication date Mar 31, 2022
- IQE plc
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH 2-DIMENSIONAL ELECTRON GAS BETWEEN POLAR-ORI...
- Publication number 20210005720
- Publication date Jan 7, 2021
- IQE PLC.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED EPITAXIAL METAL ELECTRODES FOR MODIFIED DEVICES
- Publication number 20200388489
- Publication date Dec 10, 2020
- IQE plc
- Rodney Pelzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pnictide Nanocomposite Structure for Lattice Stabilization
- Publication number 20200266276
- Publication date Aug 20, 2020
- IQE PLC.
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL METAL OXIDE AS BUFFER FOR EPITAXIAL III-V LAYERS
- Publication number 20200168454
- Publication date May 28, 2020
- IQE plc
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N TO RARE EARTH TRANSITION IN A SEMICONDUCTOR STRUCTURE
- Publication number 20200161417
- Publication date May 21, 2020
- IQE plc
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL AIN/cREO STRUCTURE FOR RF FILTER APPLICATIONS
- Publication number 20190305039
- Publication date Oct 3, 2019
- IQE plc
- Wang Nang Wang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
RE-based Integrated Photonic and Electronic Layered Structures
- Publication number 20190227233
- Publication date Jul 25, 2019
- IQE plc
- Andrew Clark
- G02 - OPTICS
Information Patent Application
Integrated Epitaxial Metal Electrodes
- Publication number 20190172923
- Publication date Jun 6, 2019
- IQE plc
- Rodney Pelzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pnictide Buffer Structures and Devices for GaN Base Applications
- Publication number 20190139761
- Publication date May 9, 2019
- IQE plc
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III SEMICONDUCTOR EPITAXY FORMED ON SILICON VIA SINGLE CRYSTA...
- Publication number 20190122885
- Publication date Apr 25, 2019
- IQE plc
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Epitaxial Metal Electrodes
- Publication number 20190074365
- Publication date Mar 7, 2019
- IQE plc
- Rodney Pelzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Electrode With Tunable Work Functions
- Publication number 20190027574
- Publication date Jan 24, 2019
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER STRUCTURES FOR RF FILTERS FABRICATED USING RARE EARTH OXIDES...
- Publication number 20190028081
- Publication date Jan 24, 2019
- IQE plc
- Rodney Pelzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Epitaxial Metal Electrodes
- Publication number 20180138284
- Publication date May 17, 2018
- IQE, plc
- Rodney Pelzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RARE EARTH INTERLAYS FOR MECHANICALLY LAYERING DISSIMILAR SEMICONDU...
- Publication number 20180012858
- Publication date Jan 11, 2018
- IQE, plc
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rare Earth Pnictides for Strain Management
- Publication number 20170353002
- Publication date Dec 7, 2017
- IQE, plc
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER STRUCTURES FOR RF FILTERS FABRICATED USING RARE EARTH OXIDES...
- Publication number 20170141750
- Publication date May 18, 2017
- IQE, plc
- Rodney Pelzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N SEMICONDUCTOR LAYER ON Si SUBSTRATE
- Publication number 20170054025
- Publication date Feb 23, 2017
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS MITIGATING AMORPHOUS SiO2 INTERLAYER
- Publication number 20160240375
- Publication date Aug 18, 2016
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N EPITAXY ON MULTILAYER BUFFER WITH PROTECTIVE TOP LAYER
- Publication number 20160181093
- Publication date Jun 23, 2016
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON
- Publication number 20160133708
- Publication date May 12, 2016
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N SEMICONDUCTOR LAYER ON Si SUBSTRATE
- Publication number 20150228484
- Publication date Aug 13, 2015
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REN SEMICONDUCTOR LAYER EPITAXIALLY GROWN ON REAlN/REO BUFFER ON Si...
- Publication number 20150203990
- Publication date Jul 23, 2015
- Rytis Dargis
- C30 - CRYSTAL GROWTH
Information Patent Application
HETEROSTRUCTURE WITH CARRIER CONCENTRATION ENHANCED BY SINGLE CRYST...
- Publication number 20150069409
- Publication date Mar 12, 2015
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N MATERIAL GROWN ON REN EPITAXIAL BUFFER ON Si SUBSTRATE
- Publication number 20150014676
- Publication date Jan 15, 2015
- RYTIS DARGIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N MATERIAL GROWN ON ErAlN BUFFER ON Si SUBSTRATE
- Publication number 20140246679
- Publication date Sep 4, 2014
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REO GATE DIELECTRIC FOR III-N DEVICE ON Si SUBSTRATE
- Publication number 20140239307
- Publication date Aug 28, 2014
- RYTIS DARGIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AlN CAP GROWN ON GaN/REO/SILICON SUBSTRATE STRUCTURE
- Publication number 20140231818
- Publication date Aug 21, 2014
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS

Rytis Dargis

Person

Patents Grantslast 30 patents

Electronic device with 2-dimensional electron gas between polar-ori...

Integrated epitaxial metal electrodes

Pnictide nanocomposite structure for lattice stabilization

III-N to rare earth transition in a semiconductor structure

Epitaxial metal oxide as buffer for epitaxial III-V layers

Integrated epitaxial metal electrodes

Pnictide buffer structures and devices for GaN base applications

Re-based integrated photonic and electronic layered structures

Epitaxial AIN/cREO structure for RF filter applications

Layer structures for RF filters fabricated using rare earth oxides...

Metal electrode with tunable work functions

Rare earth pnictides for strain management

Integrated epitaxial metal electrodes

Layer structures for RF filters fabricated using rare earth oxides...

III-N semiconductor layer on Si substrate

Stress mitigating amorphous SiO2 interlayer

Nucleation of III-N on REO templates

Method of growing III-N semiconductor layer on Si substrate

Strain compensated REO buffer for III-N on silicon

Heterostructure with carrier concentration enhanced by single cryst...

III-N material grown on REN epitaxial buffer on Si substrate

REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si...

III-N material grown on ErAlN buffer on Si substrate

III-N material grown on ErAIN buffer on Si substrate

REO gate dielectric for III-N device on Si substrate

AlN cap grown on GaN/REO/silicon substrate structure

GaN on Si(100) substrate using epi-twist

IIIOxNy on single crystal SOI substrate and III n growth platform

III-N material grown on AIO/AIN buffer on Si substrate

REO/ALO/A1N template for III-N material growth on silicon

Patents Applicationslast 30 patents

LAYERED STRUCTURE

A PNICTIDE NANOCOMPOSITE STRUCTURE FOR LATTICE STABILIZATION

ELECTRONIC DEVICE WITH 2-DIMENSIONAL ELECTRON GAS BETWEEN POLAR-ORI...

INTEGRATED EPITAXIAL METAL ELECTRODES FOR MODIFIED DEVICES

Pnictide Nanocomposite Structure for Lattice Stabilization

EPITAXIAL METAL OXIDE AS BUFFER FOR EPITAXIAL III-V LAYERS

III-N TO RARE EARTH TRANSITION IN A SEMICONDUCTOR STRUCTURE

EPITAXIAL AIN/cREO STRUCTURE FOR RF FILTER APPLICATIONS

RE-based Integrated Photonic and Electronic Layered Structures

Integrated Epitaxial Metal Electrodes

Pnictide Buffer Structures and Devices for GaN Base Applications

GROUP III SEMICONDUCTOR EPITAXY FORMED ON SILICON VIA SINGLE CRYSTA...

Integrated Epitaxial Metal Electrodes

Metal Electrode With Tunable Work Functions

LAYER STRUCTURES FOR RF FILTERS FABRICATED USING RARE EARTH OXIDES...

Integrated Epitaxial Metal Electrodes

RARE EARTH INTERLAYS FOR MECHANICALLY LAYERING DISSIMILAR SEMICONDU...

Rare Earth Pnictides for Strain Management

LAYER STRUCTURES FOR RF FILTERS FABRICATED USING RARE EARTH OXIDES...

III-N SEMICONDUCTOR LAYER ON Si SUBSTRATE

STRESS MITIGATING AMORPHOUS SiO2 INTERLAYER

III-N EPITAXY ON MULTILAYER BUFFER WITH PROTECTIVE TOP LAYER

STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON

III-N SEMICONDUCTOR LAYER ON Si SUBSTRATE

REN SEMICONDUCTOR LAYER EPITAXIALLY GROWN ON REAlN/REO BUFFER ON Si...

HETEROSTRUCTURE WITH CARRIER CONCENTRATION ENHANCED BY SINGLE CRYST...

III-N MATERIAL GROWN ON REN EPITAXIAL BUFFER ON Si SUBSTRATE

III-N MATERIAL GROWN ON ErAlN BUFFER ON Si SUBSTRATE

REO GATE DIELECTRIC FOR III-N DEVICE ON Si SUBSTRATE

AlN CAP GROWN ON GaN/REO/SILICON SUBSTRATE STRUCTURE