Ryu HIROTA

Person

Itami-shi, Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride substrate
- Patent number 10,837,124
- Issue date Nov 17, 2020
- Sumitomo Electric Industries, Ltd.
- Makoto Kiyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate
- Patent number 10,458,043
- Issue date Oct 29, 2019
- Sumitomo Electric Industries, Ltd.
- Makoto Kiyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate
- Patent number 10,443,151
- Issue date Oct 15, 2019
- Sumitomo Electric Industries, Ltd.
- Makoto Kiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride substrate
- Patent number 10,006,147
- Issue date Jun 26, 2018
- Sumitomo Electric Industries, Ltd.
- Makoto Kiyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 8,404,569
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
III-nitride crystal substrate and III-nitride semiconductor device
- Patent number 8,310,030
- Issue date Nov 13, 2012
- Sumitomo Electric Industries, Ltd.
- Ryu Hirota
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V compound crystal and semiconductor electronic circuit element
- Patent number 8,304,334
- Issue date Nov 6, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
AlxInyGal-x-yN mixture crystal substrate, method of growing same an...
- Patent number 8,198,177
- Issue date Jun 12, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V compound crystal and semiconductor electronic circuit element
- Patent number 8,134,223
- Issue date Mar 13, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
AlxInyGa1-x-yN mixture crystal substrate, method of growing same an...
- Patent number 8,067,300
- Issue date Nov 29, 2011
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III-nitride crystal, manufacturing method thereof, group III-...
- Patent number 8,038,794
- Issue date Oct 18, 2011
- Sumitomo Electric Industries, Ltd.
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal substrate, method of its manufacture, and...
- Patent number 8,002,892
- Issue date Aug 23, 2011
- Sumitomo Electric Industries, Ltd.
- Ryu Hirota
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-nitride crystal manufacturing method, III-nitride crystal subst...
- Patent number 7,998,847
- Issue date Aug 16, 2011
- Sumitomo Electric Industries, Ltd.
- Ryu Hirota
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III-nitride semiconductor crystal and manufacturing method th...
- Patent number 7,905,958
- Issue date Mar 15, 2011
- Sumitomo Electric Industries, Ltd.
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal and method of its growth
- Patent number 7,892,513
- Issue date Feb 22, 2011
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 7,858,502
- Issue date Dec 28, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of growing GaN crystal, method of producing single crystal G...
- Patent number 7,794,543
- Issue date Sep 14, 2010
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate and method of producing same
- Patent number 7,771,532
- Issue date Aug 10, 2010
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate and method of producing same
- Patent number 7,772,585
- Issue date Aug 10, 2010
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
A1xInyGa1-x-yN mixture crystal substrate, method of growing same an...
- Patent number 7,655,960
- Issue date Feb 2, 2010
- Sumito Electric Industries, Ltd.
- Seiji Nakahata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 7,589,000
- Issue date Sep 15, 2009
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single crystal GaN substrate, method of growing single crystal GaN...
- Patent number 7,534,310
- Issue date May 19, 2009
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III-V crystal
- Patent number 7,485,484
- Issue date Feb 3, 2009
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyG...
- Patent number 7,473,315
- Issue date Jan 6, 2009
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing GaN crystal, method of producing single crystal G...
- Patent number 7,354,477
- Issue date Apr 8, 2008
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing GaN crystal, method of producing single crystal G...
- Patent number 7,303,630
- Issue date Dec 4, 2007
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III-V crystal and manufacturing method thereof
- Patent number 7,297,625
- Issue date Nov 20, 2007
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group-III nitride crystal
- Patent number 7,288,151
- Issue date Oct 30, 2007
- Sumitomo Electric Industries, Ltd
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light-emitting device
- Patent number 7,129,525
- Issue date Oct 31, 2006
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal GaN substrate semiconductor device
- Patent number 7,112,826
- Issue date Sep 26, 2006
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE SUBSTRATE
- Publication number 20200032419
- Publication date Jan 30, 2020
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE
- Publication number 20180237946
- Publication date Aug 23, 2018
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE
- Publication number 20170137966
- Publication date May 18, 2017
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE
- Publication number 20170101724
- Publication date Apr 13, 2017
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20130244406
- Publication date Sep 19, 2013
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V Compound Crystal and Semiconductor Electronic Circuit Element
- Publication number 20120142168
- Publication date Jun 7, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...
- Publication number 20120040511
- Publication date Feb 16, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
III-Nitride Crystal Substrate and III-Nitride Semiconductor Device
- Publication number 20110260295
- Publication date Oct 27, 2011
- Sumitomo Electric Industries, Ltd.
- Ryu Hirota
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20110065265
- Publication date Mar 17, 2011
- Sumitomo Electric Industries, Ltd.
- Hitoshi KASAI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Growing Group III Nitride Crystal
- Publication number 20100229786
- Publication date Sep 16, 2010
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE CRYSTAL AND METHOD OF ITS GROWTH
- Publication number 20100189624
- Publication date Jul 29, 2010
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V Compound Crystal and Semiconductor Electronic Circuit Element
- Publication number 20100090313
- Publication date Apr 15, 2010
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20100009526
- Publication date Jan 14, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
III-Nitride Crystal Manufacturing Method, III-Nitride Crystal Subst...
- Publication number 20090315150
- Publication date Dec 24, 2009
- Sumitomo Electric Industries, Ltd.
- Ryu Hirota
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...
- Publication number 20090215248
- Publication date Aug 27, 2009
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME
- Publication number 20090155989
- Publication date Jun 18, 2009
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyG...
- Publication number 20090071394
- Publication date Mar 19, 2009
- SUMITOMO ELECTRONIC INDUSTRIES, LTD.
- Seiji NAKAHATA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing GaxIn1-xN(0<x>) Crystal Gaxin1-xn(0<x<1) Cryst...
- Publication number 20090032907
- Publication date Feb 5, 2009
- Tomoki Uemura
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V Crystal
- Publication number 20080299748
- Publication date Dec 4, 2008
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-Nitride Semiconductor Crystal and Manufacturing Method Th...
- Publication number 20080283968
- Publication date Nov 20, 2008
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of growing GaN crystal, method of producing single crystal G...
- Publication number 20080202409
- Publication date Aug 28, 2008
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V Crystal
- Publication number 20080038580
- Publication date Feb 14, 2008
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-...
- Publication number 20080022921
- Publication date Jan 31, 2008
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of growing gallium nitride crystal
- Publication number 20080006201
- Publication date Jan 10, 2008
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Ryu Hirota
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-Nitride Crystal Substrate and Manufacturing Method Thereo...
- Publication number 20070296061
- Publication date Dec 27, 2007
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of growing gallium nitride crystal and gallium nitride subst...
- Publication number 20070280872
- Publication date Dec 6, 2007
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Application
Fabrication method and fabrication apparatus of group III nitride c...
- Publication number 20070148920
- Publication date Jun 28, 2007
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
A1xInyGa1-x-yN mixture crystal substrate, method of growing same an...
- Publication number 20060273343
- Publication date Dec 7, 2006
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor substrate and method of producing same
- Publication number 20060272572
- Publication date Dec 7, 2006
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Single crystal GaN substrate, method of growing single crystal GaN...
- Publication number 20060213429
- Publication date Sep 28, 2006
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

Gallium nitride substrate

Gallium nitride substrate

Gallium nitride substrate

Gallium nitride substrate

Fabrication method and fabrication apparatus of group III nitride c...

III-nitride crystal substrate and III-nitride semiconductor device

III-V compound crystal and semiconductor electronic circuit element

AlxInyGal-x-yN mixture crystal substrate, method of growing same an...

III-V compound crystal and semiconductor electronic circuit element

AlxInyGa1-x-yN mixture crystal substrate, method of growing same an...

Group III-nitride crystal, manufacturing method thereof, group III-...

Group III nitride crystal substrate, method of its manufacture, and...

III-nitride crystal manufacturing method, III-nitride crystal subst...

Group III-nitride semiconductor crystal and manufacturing method th...

Group III nitride crystal and method of its growth

Fabrication method and fabrication apparatus of group III nitride c...

Method of growing GaN crystal, method of producing single crystal G...

Nitride semiconductor substrate and method of producing same

Nitride semiconductor substrate and method of producing same

A1xInyGa1-x-yN mixture crystal substrate, method of growing same an...

Fabrication method and fabrication apparatus of group III nitride c...

Single crystal GaN substrate, method of growing single crystal GaN...

Group III-V crystal

AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyG...

Method of growing GaN crystal, method of producing single crystal G...

Method of growing GaN crystal, method of producing single crystal G...

Group III-V crystal and manufacturing method thereof

Method of manufacturing group-III nitride crystal

Semiconductor light-emitting device

Single crystal GaN substrate semiconductor device

Patents Applicationslast 30 patents

GALLIUM NITRIDE SUBSTRATE

GALLIUM NITRIDE SUBSTRATE

GALLIUM NITRIDE SUBSTRATE

GALLIUM NITRIDE SUBSTRATE

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

III-V Compound Crystal and Semiconductor Electronic Circuit Element

AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...

III-Nitride Crystal Substrate and III-Nitride Semiconductor Device

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

Method for Growing Group III Nitride Crystal

GROUP III NITRIDE CRYSTAL AND METHOD OF ITS GROWTH

III-V Compound Crystal and Semiconductor Electronic Circuit Element

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

III-Nitride Crystal Manufacturing Method, III-Nitride Crystal Subst...

AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME

AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyG...

Method for Producing GaxIn1-xN(0<x>) Crystal Gaxin1-xn(0<x<1) Cryst...

Group III-V Crystal

Group III-Nitride Semiconductor Crystal and Manufacturing Method Th...

Method of growing GaN crystal, method of producing single crystal G...

Group III-V Crystal

Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-...

Method of growing gallium nitride crystal

Group III-Nitride Crystal Substrate and Manufacturing Method Thereo...

Method of growing gallium nitride crystal and gallium nitride subst...

Fabrication method and fabrication apparatus of group III nitride c...

A1xInyGa1-x-yN mixture crystal substrate, method of growing same an...

Nitride semiconductor substrate and method of producing same

Single crystal GaN substrate, method of growing single crystal GaN...