Saad MURAD

Person

Freital, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Layer structure for a group-III-nitride normally-off transistor
- Patent number 10,658,500
- Issue date May 19, 2020
- AZURSPACE Solar Power GmbH
- Stephan Lutgen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-doping of group-III-nitride buffer layer structure on a heterosub...
- Patent number 10,211,296
- Issue date Feb 19, 2019
- AZURSPACE Solar Power GmbH
- Stephan Lutgen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layer structure for a group-III-nitride normally-off transistor
- Patent number 10,128,362
- Issue date Nov 13, 2018
- AZURSPACE Solar Power GmbH
- Stephan Lutgen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-doping of group-III-nitride buffer layer structure on a heterosub...
- Patent number 10,026,814
- Issue date Jul 17, 2018
- AZURSPACE Solar Power GmbH
- Stephan Lutgen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-doping of group-III-nitride buffer layer structure on a heterosub...
- Patent number 9,786,744
- Issue date Oct 10, 2017
- AZURSPACE Solar Power GmbH
- Stephan Lutgen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layer structure for a group-III-nitride normally-off transistor
- Patent number 9,773,896
- Issue date Sep 26, 2017
- AZURSPACE Solar Power GmbH
- Stephan Lutgen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-doping of group-III-nitride buffer layer structure on a heterosub...
- Patent number 9,496,349
- Issue date Nov 15, 2016
- AZURSPACE Solar Power GmbH
- Stephan Lutgen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LAYER STRUCTURE FOR A GROUP-Ill-NITRIDE NORMALLY-OFF TRANSISTOR
- Publication number 20190097032
- Publication date Mar 28, 2019
- AZURSPACE Solar Power GMBH
- Stephan LUTGEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUB...
- Publication number 20180331187
- Publication date Nov 15, 2018
- AZURSPACE Solar Power GMBH
- Stephan LUTGEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER STRUCTURE FOR A GROUP-III-NITRIDE NORMALLY-OFF TRANSISTOR
- Publication number 20180012985
- Publication date Jan 11, 2018
- AZURSPACE Solar Power GMBH
- Stephan LUTGEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUB...
- Publication number 20170373156
- Publication date Dec 28, 2017
- AZURSPACE Solar Power GMBH
- Stephan LUTGEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUB...
- Publication number 20170077242
- Publication date Mar 16, 2017
- AZURSPACE Solar Power GMBH
- Stephan LUTGEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER STRUCTURE FOR A GROUP-III-NITRIDE NORMALLY-OFF TRANSISTOR
- Publication number 20150357454
- Publication date Dec 10, 2015
- AZURSPACE Solar Power GMBH
- Stephan LUTGEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUB...
- Publication number 20150357419
- Publication date Dec 10, 2015
- AZURSPACE Solar Power GMBH
- Stephan LUTGEN
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Layer structure for a group-III-nitride normally-off transistor

P-doping of group-III-nitride buffer layer structure on a heterosub...

Layer structure for a group-III-nitride normally-off transistor

P-doping of group-III-nitride buffer layer structure on a heterosub...

P-doping of group-III-nitride buffer layer structure on a heterosub...

Layer structure for a group-III-nitride normally-off transistor

P-doping of group-III-nitride buffer layer structure on a heterosub...

Patents Applicationslast 30 patents

LAYER STRUCTURE FOR A GROUP-Ill-NITRIDE NORMALLY-OFF TRANSISTOR

P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUB...

LAYER STRUCTURE FOR A GROUP-III-NITRIDE NORMALLY-OFF TRANSISTOR

P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUB...

P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUB...

LAYER STRUCTURE FOR A GROUP-III-NITRIDE NORMALLY-OFF TRANSISTOR

P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUB...