SADAYUKI OHNISHI

Person

HITACHINAKA-SHI, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 10,153,274
- Issue date Dec 11, 2018
- Renesas Electronics Corporation
- Sadayuki Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,660,061
- Issue date May 23, 2017
- Renesas Electronics Corporation
- Sadayuki Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 8,598,044
- Issue date Dec 3, 2013
- Renesas Electronics Corporation
- Tatsuya Usami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having a multi-laye...
- Patent number 7,833,901
- Issue date Nov 16, 2010
- NEC Electronics Corporation
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon containing silicon oxide film having high ashing tolerance a...
- Patent number 7,582,970
- Issue date Sep 1, 2009
- NEC Electronics Corporation
- Sadayuki Ohnishi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 7,563,705
- Issue date Jul 21, 2009
- NEC Electronics Corporation
- Takashi Tonegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon containing silicon oxide film having high ashing tolerance a...
- Patent number 7,420,279
- Issue date Sep 2, 2008
- NEC Electronics Corporation
- Sadayuki Ohnishi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device having two distinct sioch layers
- Patent number 7,132,732
- Issue date Nov 7, 2006
- NEC Electronics Corporation
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon containing silicon oxide film having high ashing tolerance a...
- Patent number 7,102,236
- Issue date Sep 5, 2006
- NEC Electronics Corporation
- Sadayuki Ohnishi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating semiconductor device using plasma-enhanced CVD
- Patent number 7,074,698
- Issue date Jul 11, 2006
- NEC Electronics Corporation
- Noboru Morita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170236818
- Publication date Aug 17, 2017
- RENESAS ELECTRONICS CORPORATION
- SADAYUKI OHNISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160240633
- Publication date Aug 18, 2016
- RENESAS ELECTRONICS CORPORATION
- SADAYUKI OHNISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON CONTAINING SILICON OXIDE FILM HAVING HIGH ASHING TOLERANCE A...
- Publication number 20080290522
- Publication date Nov 27, 2008
- NEC Electronics Corporation
- Sadayuki Ohnishi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor device, and production method for manufacturing such...
- Publication number 20070045861
- Publication date Mar 1, 2007
- NEC ELECTRONICS CORPORATION
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon containing silicon oxide film having high ashing tolerance a...
- Publication number 20060255466
- Publication date Nov 16, 2006
- Sadayuki Ohnishi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of fabricating a semiconductor device
- Publication number 20060216946
- Publication date Sep 28, 2006
- NEC Electronics Corporation
- Tatsuya Usami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of semiconductor device
- Publication number 20060141778
- Publication date Jun 29, 2006
- NEC Electronics Corporation
- Takashi Tonegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon containing silicon oxide film having high ashing tolerance a...
- Publication number 20050006665
- Publication date Jan 13, 2005
- Sadayuki Ohnishi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor device, and production method for manufacturing such...
- Publication number 20040183162
- Publication date Sep 23, 2004
- NEC ELECTRONICS CORPORATION
- Koichi Ohto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating semiconductor device using Plasma-Enhanced CVD
- Publication number 20040185668
- Publication date Sep 23, 2004
- NEC Electronics Corporation
- Noboru Morita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20040041269
- Publication date Mar 4, 2004
- NEC Electronics Corporation
- Sadayuki Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of semiconductor device
- Publication number 20030155657
- Publication date Aug 21, 2003
- NEC Electronics Corporation
- Takashi Tonegawa
- H01 - BASIC ELECTRIC ELEMENTS

SADAYUKI OHNISHI

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Method of fabricating a semiconductor device

Method for manufacturing a semiconductor device having a multi-laye...

Carbon containing silicon oxide film having high ashing tolerance a...

Manufacturing method of semiconductor device

Carbon containing silicon oxide film having high ashing tolerance a...

Semiconductor device having two distinct sioch layers

Carbon containing silicon oxide film having high ashing tolerance a...

Method of fabricating semiconductor device using plasma-enhanced CVD

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

CARBON CONTAINING SILICON OXIDE FILM HAVING HIGH ASHING TOLERANCE A...

Semiconductor device, and production method for manufacturing such...

Carbon containing silicon oxide film having high ashing tolerance a...

Method of fabricating a semiconductor device

Manufacturing method of semiconductor device

Carbon containing silicon oxide film having high ashing tolerance a...

Semiconductor device, and production method for manufacturing such...

Method of fabricating semiconductor device using Plasma-Enhanced CVD

Semiconductor device and manufacturing method thereof

Manufacturing method of semiconductor device