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Sadiki Jordan
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Torrance, CA, US
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Patents Grants
last 30 patents
Information
Patent Grant
Method of fabricating an electrical contact for use on a semiconduc...
Patent number
9,934,978
Issue date
Apr 3, 2018
Infineon Technologies Americas Corp.
Sadiki Jordan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Biased reactive refractory metal nitride capped contact of group II...
Patent number
9,484,425
Issue date
Nov 1, 2016
Infineon Technologies Americas Corp.
Sadiki Jordan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
III nitride power device with reduced QGD
Patent number
9,076,852
Issue date
Jul 7, 2015
International Rectifier Corporation
Jianjun Cao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Refractory metal nitride capped electrical contact and method for f...
Patent number
8,686,562
Issue date
Apr 1, 2014
International Rectifier Corporation
Sadiki Jordan
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Method of Fabricating an Electrical Contact for Use on a Semiconduc...
Publication number
20170047228
Publication date
Feb 16, 2017
Infineon Technologies Americas Corp.
Sadiki Jordan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Fabrication of III-Nitride Power Device with Reduced Gate to Drain...
Publication number
20150380518
Publication date
Dec 31, 2015
INTERNATIONAL RECTIFIER CORPORATION
Jianjun Cao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Refractory Metal Nitride Capped Contact
Publication number
20140210092
Publication date
Jul 31, 2014
INTERNATIONAL RECTIFIER CORPORATION
Sadiki Jordan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Refractory metal nitride capped electrical contact and method for f...
Publication number
20110049720
Publication date
Mar 3, 2011
INTERNATIONAL RECTIFIER CORPORATION
Sadiki Jordan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
III-NITRIDE SEMICONDUCTOR DEVICE
Publication number
20100006895
Publication date
Jan 14, 2010
Jianjun Cao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
III nitride power device with reduced QGD
Publication number
20080173897
Publication date
Jul 24, 2008
Jianjun Cao
H01 - BASIC ELECTRIC ELEMENTS